© Semiconductor Components Industries, LLC, 2017
January, 2019 − Rev. 5
1Publication Order Number:
FCPF190N65S3R0L/D
FCPF190N65S3R0L
Power MOSFET, N-Channel,
SUPERFET) III, Easy Drive,
650 V, 17 A, 190 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
Features
•700 V @ TJ = 150°C
•Typ. RDS(on) = 159 mW
•Ultra Low Gate Charge (Typ. Qg = 33 nC)
•Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
•100% Avalanche Tested
•This Device is Pb−Free and is RoHS Compliant
Applications
•Computing / Display Power Supplies
•Telecom / Server Power Supplies
•Industrial Power Supplies
•Lighting / Charger / Adapter
TO−220
CASE 340BF
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FCPF190N65S3R0 = Specific Device Code
$Y&Z&3&K
FCPF190
N65S3R0
GDS
G
S
D
VDSS ID MAXRDS(on) MAX
650 V 17 A190 mΩ @ 10 V
FCPF190N65S3R0L
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2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VDSS Drain to Source Voltage 650 V
VGSS Gate to Source Voltage DC ±30 V
AC (f > 1 Hz) ±30 V
IDDrain Current Continuous (TC = 25°C) 17* A
Continuous (TC = 100°C) 11*
IDM Drain Current Pulsed (Note 1) 42.5* A
EAS Single Pulsed Avalanche Energy (Note 2) 76 mJ
IAS Avalanche Current (Note 2) 2.5 A
EAR Repetitive Avalanche Energy (Note 1) 1.44 mJ
dv/dt MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20
PDPower Dissipation TC = 25°C 33 W
Derate Above 25°C 1.15 W/°C
TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 2.5 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 8.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RθJC Thermal Resistance, Junction to Case, Max. 3.76 _C/W
RθJA Thermal Resistance, Junction to Ambient, Max. 62.5
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCPF190N65S3R0L FCPF190N65S3R0 TO−220F Tube N/A N/A 50 Units
FCPF190N65S3R0L
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3
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 650 V
VGS = 0 V, ID = 1 mA, TJ = 150°C 700 V
DBVDSS / DTJBreakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25oC 0.6 V/°C
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V 1mA
VDS = 520 V, TC = 125oC 0.89
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V ±100 nA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 1.7 mA 2.5 4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8.5 A 159 190 mW
gFS Forward Transconductance VDS = 20 V, ID = 8.5 A 10 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 400 V, VGS = 0 V,
f = 1 MHz
1350 pF
Coss Output Capacitance 30 pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 300 pF
Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 43 pF
Qg(tot) Total Gate Charge at 10V VDS = 400 V, ID = 8.5 A,
VGS = 10 V
(Note 4)
33 nC
Qgs Gate to Source Gate Charge 7.9 nC
Qgd Gate to Drain “Miller” Charge 14 nC
ESR Equivalent Series Resistance f = 1 MHz 0.5 W
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VDD = 400 V, ID = 8.5 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
17 ns
trTurn−On Rise Time 16 ns
td(off) Turn−Off Delay Time 42 ns
tfTurn−Off Fall Time 6 ns
SOURCE−DRAIN DIODE CHARACTERISTICS
ISMaximum Continuous Source to Drain Diode Forward Current 17 A
ISM Maximum Pulsed Source to Drain Diode Forward Current 42.5 A
VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 8.5 A 1.2 V
trr Reverse Recovery Time VDD = 400 V, ISD = 8.5 A,
dIF/dt = 100 A/ms
313 ns
Qrr Reverse Recovery Charge 4.9 mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
FCPF190N65S3R0L
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4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 5. Capacitance Characteristics
ID Drain Current [A]
VDS, Drain−Source Voltage [V]
VDS, Drain−Source Voltage [V]
VSD, Body Diode Forward Voltage [V]
IS, Reverse Drain Current [A]
Figure 6. Gate Charge Characteristics
RDS(ON),
Drain−Source On−Resistance [W]
ID, Drain Current [A]
Capacitance [pF]
Qg, Total Gate Charge [V]
VGS, Gate−Source Voltage [V] ID Drain Current [A]
VGS, Gate−Source Voltage [V]
0.1
1
10
50
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
10
50
0.0
0.1
0.2
0.3
0.4
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
10000
100000
Coss
Ciss
Crss
0
2
4
6
8
10
Notes:
1. 250 ms Pulse Test
2. TC = 25°C
Notes:
1. VDS = 20 V
2. 250 ms Pulse Test
25°C
−55°C
150°C
Note: TC = 25°C
VGS = 10 V
VGS = 20 V
Notes:
1. VGS = 0 V
2. 250 ms Pulse Test
25°C
−55°C
150°C
Notes:
1. VGS = 0 V
2. f = 1 MHz
ciss = cgs + cgd (cds = shorted)
coss = cds + cgd
crss = cgd
Note: ID = 8.5 A
VDS = 130 V
VDS = 400 V
0.1 1 10 3 4 5 6 7 8 9
0 10 20 30 40 0.0 0.5 1.0 1.5
0.1 1 10 100 1000 0 5 10 15 20 25 30 35
FCPF190N65S3R0L
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5
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation vs.
Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs.
Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage
BVDSS, [Normalized]
Drain−Source Breakdown Voltage
TJ, Junction Temperature [5C]
ID, Drain Current [A]
VDS, Drain−Source Voltage
EOSS [mJ]
TJ, Junction Temperature [5C]
RDS(ON), [Normalized]
Drain−Source On−Resistance
ID, Drain Current [A]
TC, Case Temperature [5C]
VDS, Drain to Source Voltage
0.8
0.9
1.0
1.1
1.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
0.1
1
10
100
10 ms
1 ms
Operation in This Area
is Limited by RDS(on)
DC
0
5
10
15
20
0
2
4
6
8
Notes:
1. VDS = 0 V
2. ID = 10 mA
Notes:
1. VDS = 10 V
2. ID = 8.5 A
Notes:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
30 ms
100 ms
−50 0 50 100 150 −50 0 50 100 150
1 10 100 1000 25 50 75 100 125 150
0 130 260 390 520 650
FCPF190N65S3R0L
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6
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 12. Transient Thermal Response Curve
r(t), Normalized Effective Transient
Thermal Resistance
t, Rectangular Pulse Duration (sec)
10
−510
−410
−310
−210
−1100101102
0.001
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Notes:
ZqJC(t) = r(t) × RqJC
RqJC = 3.76°C/W
Peak TJ = PDM × ZqJC(t) + TC
Duty Cycle, D = t1 / t2
PDM
t1
t2
FCPF190N65S3R0L
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7
Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
RL
VDS
VGS
VGS
RG
DUT
VDD
VDS
VGS
10%
90%
10%
90% 90%
ton toff
trtf
td(on) td(off)
Qg
Qgd
Qgs
VGS
Charge
VDS
VGS
RL
DUT
IG = Const.
VDD
VDS
RG
DUT
VGS
L
ID
tp
VDD
tp
Time
IAS
BVDSS
ID(t)
VDS(t)
EAS +1
2
@LIAS
2
FCPF190N65S3R0L
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8
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
L
VDD
RG
ISD
VSD
+
−
VGS
Same Type
as DUT
− dv/dt controlled by RG
− ISD controlled by pulse period
Driver
VGS
(Driver)
ISD
(DUT)
VDS
(DUT) VSD
IRM
10 V
di/dt
VDD
IFM, Body Diode Forward Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
D+
Gate Pulse Width
Gate Pulse Period
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
TO−220 FULLPAK 3LD
CASE 340BF
ISSUE O DATE 31 AUG 201
6
4.60
4.30
10.70
10.30
3.00
2.60
3.40
3.00
10.30
9.80
0.90
0.50 (3X)
2.74
2.34 (2X)
2.14
3.30
2.70 B
1.20
1.00
1.20
0.90
(2X)
B19.00
17.70
13
0.50MA
A2.90
2.50
B15.70
15.00
2.70
2.30
B0.60
0.40
6.60
6.20
1 X 45°
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
BDOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS
.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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1
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0 Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON13839G
ON SEMICONDUCTOR STANDARD
TO−220 FULLPAK 3LD
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
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ORELEASED FOR PRODUCTION FROM FAIRCHILD TO220V03 TO ON SEMICON-
DUCTOR. REQ. BY B. NG. 31 AUG 2016
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. O Case Outline Number
:
340BF
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