2SK3905
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3905
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 500 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 17
Drain current
Pulse (Note 1) IDP 68
A
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy
(Note 2)
EAS 816 mJ
Avalanche current IAR 17 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 4.8 mH, RG = 25 Ω, IAR = 17 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC ―
JEITA SC-65
TOSHIBA 2−16C1B
Weight: 4.6 g (typ.)
1
3
2
2SK3905
2009-09-29
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA
Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cutoff current IDSS V
DS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 8.5 A ⎯ 0.25 0.31 Ω
Forward transfer admittance ⎪Yfs⎪ V
DS = 10 V, ID = 8.5 A 2.3 8.2 ⎯ S
Input capacitance Ciss ⎯ 3100 ⎯
Reverse transfer capacitance Crss ⎯ 20 ⎯
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ 270 ⎯
pF
Rise time tr ⎯ 70 ⎯
Turn-on time ton ⎯ 130 ⎯
Fall time tf ⎯ 70 ⎯
Switching time
Turn-off time toff
⎯ 280 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 62 ⎯
Gate-source charge Qgs ⎯ 40 ⎯
Gate-drain (“Miller”) charge Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 17 A
⎯ 22 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 17 A
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 68 A
Forward voltage (diode) VDSF I
DR = 17 A, VGS = 0 V ⎯ ⎯ −1.7
V
Reverse recovery time trr ⎯ 1300 ⎯ ns
Reverse recovery charge Qrr
IDR = 17 A, VGS = 0 V,
dIDR/dt = 100 A/μs ⎯ 18 ⎯ μC
Marking
Duty ≤ 1%, tw = 10 μs
0 V
10 V
VGS
RL = 24 Ω
VDD ≈ 200 V
ID = 8.5 A
VOUT
50 Ω
K3905
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK3905
2009-09-29
3
0
10
20
30
40
50
02468101214
Tc = −55°C
25
100
0.1
1
110100
1
10
100
1 10 100
25
100
Tc = −55°C
0
2
4
6
8
10
012345
6.0
VGS = 4.5 V
5.0
5.25
5.5
5.75
10 8.0
COMMON
SOURCE
Tc = 25°C
PULSE TEST
0
4
8
12
16
20
0 1020304050
VGS = 5.0 V
8.0
10
6.5
7.0
5.5
6.0
6.75
6.25
COMMON SOURCE
Tc = 25°C
PULSE TEST
0
2
4
6
8
10
0 4 8 121620
COMMON SOURCE
Tc = 25°C
PULSE TEST
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN−SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN CURRENT ID (A)
DRAIN−SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN CURRENT ID (A)
GATE−SOURCE VOLTAGE VGS (V)
ID – VGS
DRAIN CURRENT ID (A)
GATE−SOURCE VOLTAGE VGS (V)
VDS – VGS
DRAIN CURRENT ID (A)
⎪Yfs⎪ − ID
DRAIN CURRENT ID (A)
RDS (ON) − ID
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
COMMON SOURCE
VDS = 20 V
PULSE TEST
COMMON SOURCE
VDS = 20 V
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
4.0
8.5
ID = 17 A
VGS = 10 V
6.25
VGS = 15 V
2SK3905
2009-09-29
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0
1
2
3
4
5
-80 -40 0 40 80 120 160
0
0.2
0.4
0.6
0.8
1
-80 -40 0 40 80 120 160
ID = 17 A
4
8.5
0.1
1
10
100
-1.2-1.0-0.8-0.6-0.4-0.20.0
10
100
1000
10000
0.1 1 10 100
0
100
200
300
400
500
0 20406080100
0
4
8
12
16
20
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN POWER DISSIPATION PD (W)
GATE THRESHOLD VOLTAGE Vth (V)
CASE TEMPERATURE Tc (°C)
RDS (ON) − Tc
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
DRAIN−SOURCE VOLTAGE VDS (V)
IDR − VDS
DRAIN REVERSE CURRENT IDR (A)
DRAIN−SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
CAPACITANCE C (pF)
CASE TEMPERATURE Tc (°C)
Vth − Tc
CASE TEMPERATURE Tc (°C)
PD − Tc
COMMON SOURCE
VGS = 10 V
PULSE TEST
200
40
120
80
160
0
0 80 120 20040 160
DRAIN−SOURCE VOLTAGE VDS (V)
GATE−SOURCE VOLTAGE VGS (V)
TOTAL GATE CHARGE Qg (nC)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
COMMON SOURCE
ID = 17 A
Tc = 25°C
PULSE TEST
400
200
VDS = 100 V
VDS
VGS
Ciss
Coss
Crss
VGS = 0, −1 V
1
3
10
5
COMMON SOURCE
Tc = 25°C
PULSE TEST
2SK3905
2009-09-29
5
0
200
400
600
800
1000
25 50 75 100 125 150
0.01
0.1
1
10
100
1 10 100 1000
10 μ 100 μ 1 m 10 m 100 m 1 10
0.001
0.01
0.1
1
10
T
PDM
t
Duty = t/T
Rth (ch-c) = 0.833°C/W
SINGLE PULSE
Duty = 0.5
0.2
0.1
0.05
0.02
0.01
rth − tw
SAFE OPERATING AREA
EAS – Tch
DRAIN−SOURCE VOLTAGE VDS (V)
PULSE WIDTH tw (s)
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-a)
AVALANCHE ENERGY EAS (mJ)
DRAIN CURRENT ID (A)
−15 V
15 V
TEST CIRCUIT WAVE FORM
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 90 V, L = 4.8 mH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
DC OPERATION
Tc = 25°C
100 μs *
1 ms *
* SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
ID max (PULSE) *
ID max (CONTINUOUS)
VDSS max
2SK3905
2009-09-29
6
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
