SB150-E3/54 - Vishay [General Semiconductor]

Document Number: 88715 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 16-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

Schottky Barrier Rectifier

SB120 thru SB160

Vishay General Semiconductor

FEATURES

• Guardring for overvoltage protection

• Very small conduction losses

• Extremely fast switching

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters, and polarity protection

applications.

MECHANICAL DATA

Case: DO-204AL (DO-41)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 20 V to 60 V

IFSM 50 A

VF0.48 V, 0.65 V

TJ max. 125 °C, 150 °C

DO-204AL (DO-41)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SB120 SB130 SB140 SB150 SB160 UNIT

Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V

Maximum RMS voltage VRMS 14 21 28 35 42 V

Maximum DC blocking voltage VDC 20 30 40 50 60 V

Maximum average forward rectified current

at 0.375" (9.5 mm) lead length (fig. 1) IF(AV) 1.0 A

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load IFSM 50 A

Voltage rate of change (rated VR) dV/dt 10 000 V/μs

Operating junction temperature range TJ- 65 to + 125 - 65 to + 150 °C

Storage temperature range TSTG - 65 to + 150 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL SB120 SB130 SB140 SB150 SB160 UNIT

Maximum instantaneous

forward voltage 1.0 A VF (1) 0.48 0.65 V

Maximum instantaneous reverse

current at rated DC blocking voltage

TA = 25 °C

IR (1) 0.50

TA = 100 °C 10 5.0

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88715

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 16-Oct-09

SB120 thru SB160

Vishay General Semiconductor

Note

(1) Thermal resistance junction to lead P.C.B. mounted 0.375" (9.5 mm) lead length

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SB120 SB130 SB140 SB150 SB160 UNIT

Typical thermal resistance

RθJA (1) 50

°C/W

RθJL (1) 15

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

SB140-E3/54 0.35 54 5500 13" diameter paper tape and reel

SB140-E3/73 0.35 73 3000 Ammo pack packaging

0.25

0.5

0.75

050 7525 100 125 150 175

1.0

Average Forward Current (A)

Lead Temperature (°C)

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

SB150 and SB160

SB120 to SB140

1100

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

= T

Max.

8.3 ms Single Half Sine-Wave

100

0.1

0.01

0 0.40.2 1.20.80.6 1.4 1.61.0

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

= 125 °C

= 25 °C

SB120 thru SB140

SB150 and SB160

= 150 °C Pulse Width = 300 μs

1 % Duty Cycle

Instantaneous Reverse Current (mA)

100

0.01

0.001

0.1

200 10040 60 80

Percent of Rated Peak Reverse Voltage (%)

= 125 °C

= 25 °C

= 75 °C

SB120 thru SB140

SB150 and SB160

Document Number: 88715 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 16-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

SB120 thru SB160

Vishay General Semiconductor

Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Junction Capacitance (pF)

101 100

100

1000

0.1

Reverse Voltage (V)

SB120 thru SB140

SB150 and SB160

= 25 °C

f = 1.0 MHz

sig

= 50 mV

p-p

0.01 101 100

100

0.1

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

DO-204AL (DO-41)

0.107 (2.7)

0.080 (2.0)

DIA.

0.034 (0.86)

0.028 (0.71)

DIA.

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

0.205 (5.2)

0.160 (4.1)

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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