FDFS6N303L86Z - Fairchild Semiconductor Corporation

October 2001

FDFS6N303

FETKEY N-Channel MOSFET with Schottky Diode

General Description Features

MOSFET Maximum Ratings TA = 25oC unless otherwise noted

Symbol Parameter FDFS6N303 Units

VDSS Drain-Source Voltage 30 V

VGSS Gate-Source Voltage ±20 V

IDDrain Current - Continuous (Note 1a) 6A

- Pulsed 30

PDPower Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1c)0.9

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

Schottky Diode Maximum Ratings TA = 25oC unless otherwise noted

VRRM Repetitive Peak Reverse Voltage 30 V

IOAverage Forward Current (Note 1a) 2A

6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V.

R

DS(ON) = 0.050 Ω @ VGS = 4.5 V.

VF < 0.28 V @ 0.1 A

VF < 0.42 V @ 3 A

VF < 0.50 V @ 6 A.

Schottky and MOSFET incorporated into single power

surface mount SO-8 package.

General purpose pinout for design flexibility.

Ideal for DC/DC converter applications.

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223SuperSOTTM-6

Fairchild Semiconductor's FETKEY technology incorporates

a high cell density MOSFET and low forward drop (0.35V)

Schottky diode into a single surface mount power package.

The MOSFET and Schottky diode are isolated inside the

package. The general purpose pinout has been chosen to

maximize flexibility and ease of use. FETKEY products are

particularly suited for switching applications such as DC/DC

buck, boost, synchronous, and non-synchronous converters

where the MOSFET is driven as low as 4.5V and fast

switching, high efficiency and small PCB footprint is

desirable.

A

C

S

A

SO-8

D

C

G

pin 1

FDFS

6N303

A

AC

C

D

G

S6

7

5

1

2

3

4

8

Electrical Characteristics (TA = 25 oC unless otherwise noted )

MOSFET ELECTRICAL CHARACTERISTICS

Symbol Parameter Conditions Min Typ Max Units

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA

TJ =125°C 20 µA

IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.7 3V

RDS(ON)

Static Drain-Source On-Resistance VGS = 10 V, I D = 6 A 0.025 0.035

Ω

VGS = 4.5 V, I D = 4.8 A0.043 0.05

gFS Forward Transconductance VDS = 10 V, ID = 6 A12 S

ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 15 A

Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 350 pF

Coss Output Capacitance f = 1.0 MHz 220 pF

Crss Reverse Transfer Capacitance 80 pF

QgTotal Gate Charge VDS = 15 V, ID = 6 A, VGS = 10 V 12 17 nC

tD(on)Turn - On Delay Time VDD = 10 V, ID = 1 A,

VGS = 4.5 V, RGEN = 6 Ω7.5 15 ns

trTurn - On Rise Time 12 25 ns

tD(off) Turn - Off Delay Time 13 25 ns

tfTurn - Off Fall Time 6 15 ns

MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current 1.3 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 1.3 A (Note 2)0.8 1.2 V

SCHOTTKY DIODE CHARACTERISTICS

BVReverse Breakdown Voltage IR = 1 mA 30 V

IRReverse Leakage VR = 30 V 0.5 mA

VFForward Voltage IF = 0.1 A 280 mV

IF = 3 A 420

IF = 6 A 500

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)78 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is

guaranteed by design while RθCA is determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDFS6N303 Rev. D

c. 135OC/W on a 0.003 in2

pad of 2oz copper.

b. 125OC/W on a 0.02 in2

pad of 2oz copper.

a. 78OC/W on a 0.5 in2

pad of 2oz copper.

FDFS6N303 Rev. D

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation with

Temperature.

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

01234

0

5

10

15

20

25

30

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V =10V

GS

3.5V

3.0V

4.5V

4.0V

5.0V

DS

D

6.0V

0 5 10 15 20 25 30

0.5

1

1.5

2

2.5

3

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 4.0V

GS

10V

5.0V

4.5V

D

6.0V 7.0V

R , NORMALIZED

DS(ON)

2 4 6 8 10

0

0.025

0.05

0.075

0.1

V , GATE TO SOURCE VOLTAGE (V)

GS

R , ON-RESISTANCE (OHM)

DS(ON)

25°C

I = 3A

D

T = 125°C

A

1234567

0

5

10

15

20

25

30

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

GS

25°C

125°C

V = 5V

DS

D

T = -55°C

A

00.2 0.4 0.6 0.8 11.2 1.4

0.0001

0.001

0.01

0.1

1

10

30

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

A

25°C

-55°C

V = 0V

GS

SD

S

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = 10V

GS

I = 6A

D

R , NORMALIZED

DS(ON)

FDFS6N303 Rev. D

Typical Fet And Schottky Electrical Characteristics

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

0 2 4 6 8 10 12 14

0

2

4

6

8

10

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

g

GS

I = 6.0A

DV = 5V

DS

10V

15V

0.1 0.3 1 3 10 30

50

100

200

500

1000

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

f = 1 MHz

V = 0V

GS

C

oss

C

iss

C

rss

0.0001 0.001 0.01 0.1 110 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R =135° C/W

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1c.

Transient thermal response will change depending on the circuit board design.

Figure 10. Schottky Diode Reverse Current.

Figure 9. Schottky Diode Forward Voltage.

00.1 0.2 0.3 0.4 0.5 0.6

0.1

1

10

V , FORWARD VOLTAGE (V)

I , FORWARD CURRENT (A)

25°C

F

T = 125°C

J

0 5 10 15 20 25 30

0.00001

0.0001

0.001

0.01

0.1

1

V , REVERSE VOLTAGE (V)

I , REVERSE CURRENT (A)

T = 125°C

J

25°C

R

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

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not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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