SiSH402DN
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S18-0697-Rev.B, 09-Jul-2018 1Document Number: 75897
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•DC/DC converter
- Notebook
- POL
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package
family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at
the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
g. Package limited
PRODUCT SUMMARY
VDS (V) 30
RDS(on) max. () at VGS = 10 V 0.0060
RDS(on) max. () at VGS = 4.5 V 0.0080
Qg typ. (nC) 12
ID (A) a, g 35
Configuration Single
PowerPAK® 1212-8SH
Bottom View
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Top View
1
3.3 mm
3.3 mm
0.9 mm
N-
C
hannel M
OS
FET
G
D
S
ORDERING INFORMATION
Package PowerPAK 1212-8
Lead (Pb)-free and halogen-free SiSH402DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 30 V
Gate-source voltage VGS ± 20
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
35 a, g
A
TC = 70 °C 35 g
TA = 25 °C 19 b, c
TA = 70 °C 15 b, c
Pulsed drain current IDM 70
Avalanche current L = 0.1 mH IAS 35
Avalanche energy EAS 61 mJ
Continuous source-drain diode current TC = 25 °C IS
43 A
TA = 25 °C 3.2 b, c
Maximum power dissipation
TC = 25 °C
PD
52
W
TC = 70 °C 33
TA = 25 °C 3.8 b, c
TA = 70 °C 2 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, f t 10 s RthJA 24 33 °C/W
Maximum junction-to-case (drain) Steady state RthJC 1.9 2.4
SiSH402DN
www.vishay.com Vishay Siliconix
S18-0697-Rev.B, 09-Jul-2018 2Document Number: 75897
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test: pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 30 - - V
VDS temperature coefficient VDS/TJID = 250 μA -24-
mV/°C
VGS(th) temperature coefficient VGS(th)/TJ--6-
Gate-source threshold voltage VGS(th) VDS = VGS , ID = 250 μA 1.15 - 2.2 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 30 V, VGS = 0 V - - 1 μA
VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 5
On-state drain current aID(on) VDS 5 V, VGS = 10 V 50 - - A
Drain-source on-state resistance aRDS(on)
VGS = 10 V, ID = 19 A - 0.0048 0.0060
VGS = 4.5 V, ID = 16.6 A - 0.0064 0.0080
Forward transconductance agfs VDS = 15 V, ID = 19 A - 82 - S
Dynamic b
Input capacitance Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
- 1700 -
pFOutput capacitance Coss - 350 -
Reverse transfer capacitance Crss - 140 -
Total gate charge Qg
VDS = 15 V, VGS = 10 V, ID = 19 A - 28 42
nC
VDS = 15 V, VGS = 4.5 V, ID = 19 A
-1221
Gate-source charge Qgs -5.4-
Gate-drain charge Qgd -4.6-
Gate resistance Rgf = 1 MHz - 1.2 2.4
Turn-on delay time td(on)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
-2540
ns
Rise time tr-2030
Turn-off delay time td(off) -2540
Fall time tf-1525
Turn-on delay time td(on)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
-1220
Rise time tr-1015
Turn-off delay time td(off) -2540
Fall time tf-1015
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTC = 25 °C --30
A
Pulse diode forward current ISM --70
Body diode voltage VSD IS = 10 A, VGS = 0 V -0.81.2V
Body diode reverse recovery time trr
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-2550ns
Body diode reverse recovery charge Qrr -1735nC
Reverse recovery fall time ta-13-ns
Reverse recovery rise time tb-12-
SiSH402DN
www.vishay.com Vishay Siliconix
S18-0697-Rev.B, 09-Jul-2018 3Document Number: 75897
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS =10Vthru4V
VGS =2V
VGS =3V
0.002
0.004
0.006
0.008
0.010
0 10203040506070
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
VGS =4.5V
VGS =10V
0
2
4
6
8
10
0 6 12 18 24 30
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
VDS =15V
VDS =24V
ID= 19 A
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
TC= 25 °C
TC= 125 °C
TC= -55 °C
Crss
0
300
600
900
1200
1500
1800
2100
0 5 10 15 20 25 30
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Coss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
- On-Resistance (Normalized)
RDS(on)
ID=19 A
VGS =10V,4.5V
SiSH402DN
www.vishay.com Vishay Siliconix
S18-0697-Rev.B, 09-Jul-2018 4Document Number: 75897
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
Safe Operating Area, Junction-to-Ambient
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ=150 °C
10
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
1
100
TJ=25 °C
0.000
0.003
0.006
0.009
0.012
0.015
0246810
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
TJ= 25 °C
TJ= 125 °C
ID=19 A
0.01
0
1
40
50
10
600
Time (s)
30
20
Power (W)
0.1 10 100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I D
0.1 TA=25 °C
Single pulse
1ms
10 ms
100 ms
Limited by RDS(on) (1)
BVDSS
limited
100 µs
IDM limited
I
limited
D(on)
1s
10 s
DC
SiSH402DN
www.vishay.com Vishay Siliconix
S18-0697-Rev.B, 09-Jul-2018 5Document Number: 75897
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating aPower Derating
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
TC- Case Temperature (°C)
ID- Drain Current (A)
0
20
40
60
80
0 255075100125150
Package Limited
0
10
20
30
40
50
60
25 50 75 100 125 150
TC- Case Temperature (°C)
Power (W)
SiSH402DN
www.vishay.com Vishay Siliconix
S18-0697-Rev.B, 09-Jul-2018 6Document Number: 75897
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75897.
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = RthJA = 65 °C/W
3. T JM - T
A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface mounted
PDM
10-3 10-2 110-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Package Information
www.vishay.com Vishay Siliconix
Revison: 09-Jan-17 1Document Number: 71656
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® 1212-8, (Single / Dual)
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 0.00 - 0.05 0.000 - 0.002
b 0.23 0.30 0.41 0.009 0.012 0.016
c 0.23 0.28 0.33 0.009 0.011 0.013
D 3.20 3.30 3.40 0.126 0.130 0.134
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
D3 0.48 - 0.89 0.019 - 0.035
D4 0.47 typ. 0.0185 typ
D5 2.3 typ. 0.090 typ
E 3.20 3.30 3.40 0.126 0.130 0.134
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 1.75 1.85 1.98 0.069 0.073 0.078
E4 0.034 typ. 0.013 typ.
e 0.65 BSC 0.026 BSC
K 0.86 typ. 0.034 typ.
K1 0.35 - - 0.014 - -
H 0.30 0.41 0.51 0.012 0.016 0.020
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 typ. 0.005 typ.
ECN: S16-2667-Rev. M, 09-Jan-17
DWG: 5882
Notes
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold ash and cutting burrs
Backside view of single pad
Backside view of dual pad
Detail Z D1
D2
D1
E1
c
A
54
18
D2
4
3
H
2
1
θ
θ
e
b
θ
θ
E2 L
b
D3(2x)
4
3
2
1
A1
Z
K
K1
W
M
D4
E3
E4
D5
KH
E4
E2 L
D2 D4
E3
D5
L1
2
2
D
E
H
Package Information
www.vishay.com Vishay Siliconix
Revision: 15-Jan-18 1Document Number: 76384
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® 1212-SWLH
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.82 0.90 0.98 0.032 0.035 0.038
A1 0 - 0.05 0 - 0.002
A3 0.20 ref. 0.008 ref.
b 0.30 BSC 0.012 BSC
D 3.30 BSC 0.130 BSC
D1 2.15 2.25 2.35 0.084 0.088 0.092
E 3.30 BSC 0.130 BSC
E1 1.60 1.70 1.80 0.063 0.067 0.071
e 0.65 BSC 0.026 BSC
K 0.76 typ. 0.030 typ.
K1 0.41 typ. 0.016 typ.
L 0.43 BSC 0.017 BSC
Z 0.525 typ. 0.021 typ.
ECN: C18-0001-Rev. A, 15-Jan-18
DWG: 6062
Backside view
1234
5678
1
2
3
4
5678
D
E
D1
E1 K1
Z
L
b
K
e
A3
A1
A
C
0.08 C
0.10 C
0.10 C
2x
0.10 C
2x
Application Note 826
Vishay Siliconix
Document Number: 72597 www.vishay.com
Revision: 21-Jan-08 7
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.088
(2.235)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.860)
0.094
(2.390)
0.039
(0.990)
0.068
(1.725)
0.010
(0.255)
0.016
(0.405)
0.026
(0.660)
0.025
(0.635)
0.030
(0.760)
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Revision: 08-Feb-17 1Document Number: 91000
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