VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
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Ultrafast Soft Recovery Diode, 60 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
PRODUCT SUMMARY
Package TO-247AC modified (2 pins),
TO-247AC
IF(AV) 60 A
VR400 V
VF at IF0.87 V
trr typ. See Recovery table
TJ max. 175 °C
Diode variation Single die
TO-247AC modified TO-247AC
Cathode
to base
2
13
Cathode Anode
VS-60EPU04PbF
Cathode
to base
2
Anode Anode
VS-60APU04PbF
VS-60EPU04-N3 VS-60APU04-N3
13
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage VR400 V
Continuous forward current IF(AV) TC = 127 °C 60
ASingle pulse forward current IFSM TC = 25 °C 600
Maximum repetitive forward current IFRM Square wave, 20 kHz 120
Operating junction and storage temperatures TJ, TStg -55 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA 400 - -
V
Forward voltage VF
IF = 60 A - 1.05 1.25
IF = 60 A, TJ = 175 °C - 0.87 1.03
IF = 60 A, TJ = 125 °C - 0.93 1.10
Reverse leakage current IR
VR = VR rated - - 50 μA
TJ = 150 °C, VR = VR rated - - 2 mA
Junction capacitance CTVR = 400 V - 50 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 3.5 - nH
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
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Revision: 09-Jul-15 2Document Number: 94022
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DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V - 50 60
nsTJ = 25 °C
IF = 60 A
dIF/dt = 200 A/μs
VR = 200 V
-85-
TJ = 125 °C - 145 -
Peak recovery current IRRM
TJ = 25 °C - 8.8 - A
TJ = 125 °C - 15.4 -
Reverse recovery charge Qrr
TJ = 25 °C - 375 - nC
TJ = 125 °C - 1120 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case RthJC - - 0.70
K/W
Thermal resistance,
case to heatsink RthCS
Mounting surface, flat, smooth
and greased -0.2-
Weight -5.5- g
-0.2-oz.
Mounting torque
1.2
(10) -2.4
(20)
N · m
(lbf · in)
Marking device Case style TO-247AC modified 60EPU04
Case style TO-247AC 60APU04
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
www.vishay.com Vishay Semiconductors
Revision: 09-Jul-15 3Document Number: 94022
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
1000
02.51.5
1
VF - Forward Voltage Drop (V)
IF - Instantaneous
Forward Current (A)
100
0.5 2
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.01
0.1
1
10
100
0 200
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 25 °C
100
0.001
1000
400300
TJ = 175 °C
TJ = 125 °C
100
1000
0 100 1000
10
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
10
TJ = 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
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Revision: 09-Jul-15 4Document Number: 94022
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
0204060
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
140
160
180
See note (1)
120
DC
80
80 100
Square wave (D = 0.50)
80 % rated VR applied
100
0 40 60 80 100
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0
40
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
20
20
60
80
100
RMS limit
80
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
140
180
120
160
200
60
100
VR = 400 V
TJ = 125 °C
TJ = 25 °C
IF = 120 A
IF = 60 A
IF = 40 A
100 1000
Qrr (nC)
dIF/dt (A/µs)
2500
1500
3500
VR = 400 V
TJ = 125 °C
TJ = 25 °C
0
500
IF = 40 A
IF = 60 A
IF = 120 A
3000
2000
1000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
www.vishay.com Vishay Semiconductors
Revision: 09-Jul-15 5Document Number: 94022
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
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Revision: 09-Jul-15 6Document Number: 94022
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ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-60EPU04PbF 25 500 Antistatic plastic tube
VS-60EPU04-N3 25 500 Antistatic plastic tube
VS-60APU04PbF 25 500 Antistatic plastic tube
VS-60APU04-N3 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions TO-247AC modified www.vishay.com/doc?95541
TO-247AC www.vishay.com/doc?95542
Part marking information
TO-247AC modified PbF www.vishay.com/doc?95255
TO-247AC modified -N3 www.vishay.com/doc?95442
TO-247ACPbF www.vishay.com/doc?95226
TO-247AC-N3 www.vishay.com/doc?95007
2- Current rating (60 = 60 A)
4- Package:
P = TO-247AC (modified)
5- Type of silicon:
U = ultrafast recovery
6- Voltage rating (04 = 400 V)
3- Circuit configuration:
E = single diode
A = single diode, 3 pins
Device code
51 32 4 6 7
VS- 60 E P U 04 PbF
1- Vishay Semiconductors product
7- Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
Outline Dimensions
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Revision: 20-Apr-17 1Document Number: 95541
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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TO-247AC modified - 50 mils L/F
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 7.39 - 0.291
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
E
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
A
(6) Ø P (Datum B)
Ø P1
D1 (4)
4
E1
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
0.10 AC
M M
Ø K BD
M M
Outline Dimensions
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Revision: 20-Apr-17 1Document Number: 95542
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TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 7.39 - 0.291
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
0.10 AC
M M
E
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Φ P (Datum B)
Φ P1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
Legal Disclaimer Notice
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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