2N1 794" O04; 2N 4371 435// U + Dim. Inches Millimeter + B Minimum Maximum Minimum Maximum Notes J A --- --- --- --- 1 C B 1.050 1.060 26.67 26.92 The C --- 1.161 --- 29.49 it S D .797 .827 20.24 21.01 LR N E 276 .286 .701 7.26 Li Fo === 948 --- 24.08 P $F M | G 425 .499 10.80 12.67 2 | H --- -900 --- 22.86 Dia. K J 225 275 6.48 6.99 _l | K --- 1.750 --- 44.45 G M 370 .380 9.40 9.65 A ED 5 213 223 5.41 5.66 Dia. | .065 .075 1.65 1.91 Dia. TO208AD R215 1225 5.46 5.72 (T0-83) S 290 315 7.37 B.00 O14 .530 13.06 13.46 Note 1: 1/2-20 UNF3A Note 2: Full thread within 2 1/2 threads U 089 099 2.26 2.51 Microsemi Microsemi VDRM /VRRM Catalog Number Catalog Number 2N4371 100 . 2N1794 2N4372 200 e High dv/dt-100 V/usec. 2N1795 250 ON1796 300 e 1600 Amperes surge current 2N1797 2N4373 400 e Low forward on-state voltage 2N1798 500 2N1799 2N4374 600 Package conforming to TO208AD outline 2N1800 720 2N1801 700 e Economical for general purpose 2N1802 2N4375 800 iagti ON 803 900 phase control applications 2N1804 2N4376 1000 2N4377 1200 Electrical Characteristics Max. RMS on-state current IT(RMS) 110 Amps Tc = g7C Max. average on-state cur. yay) 70 Amps Tc = 87C Max. peak on-state voltage VIM 1.6 Volts ITM = 220 A(peak) Max. holding current 1H 200 mA Max. peak one cycle surge current ITSM 1600 A Tce = 87C, 60 Hz Max. I2t capability for fusing I2 10,624A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range TJ -65C to 125C Storage temperature range TSTG -65C to 150C Maximum thermal resistance Reuc 0.40C/W Junction to case Typical thermal resistance (greased) Recs 0.20C/W Case to sink Mounting torque 100-130 inch pounds Weight 3.24 ounces (91.8 grams) typical LAWRENCE a =& Lake Street Lawrence, MA 01841 _94_ Microsemi 352% 4-24-07 few. 3 FAX: (978) 689-0803 www.microsemi.com 2N1/941604; 2N45/1-45/7 Switching Critical rate of rise of onstate current (note 1) di/dt 100A /usec. TJ = 125C Typical delay time (note 1) td 3.0 usec. 5 Typical circuit commuted turnoff time (note 2) tq 100 usec. TJ = 125C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turnoff interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VET 3.0V Ty = 25C Max. nontriggering gate voltage VeD 0.25V Ty = 125C Max. gate current to trigger | GT 100mA Ty = 25C Max. peak gate power Pom 15W Average gate power PE(AV) 3.0W tp = 10 usec. Max. peak gate current | GM 4.0A Max. peak gate voltage (forward) Vom 10V Max. peak gate voltage (reverse) VeM 5.0V Blocking Max. leakage current IDRM, 'RRM 10mA Ty =125C & VDRM,YRRM Max. reverse leakage IRRM, 'DRM 100 uA Ty =25C & VRRM,VRRM Critical rate of rise of offstate voltage dv/dt 100V /usec. Ty =125C 0424-07 Rev. 3 Z2N1/941 3804; 2N45/1-45// Figure 1 Figure 3 Typical Forward OnState Characteristics Maximum Power Dissipation 1 2 105 8000 6000 ~ on 4000 30 45 / yy a Oo NS NS SS. 2 Maximum Power Dissipation Watt 30 Yo 1000 15 800 600 0 0 10 20 30 40 50 60 70 80 90 100 400 Average OnState Current Amperes o Figure 4 & 200 Transient Thermal Impedance E 0.7 << . a 100 3 3 80 O05 s 0.4 s 0: 40 o 2 Le & 6 30.3 LL w og va a fo} | 9 ~ 02 I 5 20 cs 1 } an c . . g a? = 10 36 8 12 16 20 24 28 32 36 -001 01 0.1 1.0 10 100 Instantaneous OnState Voltage Volts Time in Seconds Figure 2 Forward Current Derating 130 5 120 3 RN 2 110 SS SS NNN & _~ ww = 90 : = 80 E E 70 = 60 304] 6c} 904] [120 _|180 0 10 20 30 40 50 60 70 80 90 100 Average OnState Current Amperes 04-24-07 Rev. 3