1
Rectifier Device Data
POWERTAP III Package
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power
diode. State of the art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency switching
power supplies, free wheeling diode and polarity protection diodes.
•Very Low Forward Voltage Drop
•Highly Stable Oxide Passivated Junction
•Guardring for Stress Protection
•High dv/dt Capability
Mechanical Characteristics:
•Dual Die Construction
•Case: Epoxy, Molded with Plated Copper Heatsink Base
•Weight: 40 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant
•Base Plate Torques: See procedure given in the
Package Outline Section
•Top Terminal Torque: 25–40 lb–in max.
•Shipped 50 units per foam
•Marking: MBRP30035L
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35 Volts
Average Rectified Forward Current
(At Rated VR, TC = 100°C) IO300 Amps
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 100°C) IFRM 600 Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 3000 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 2.0 Amps
Storage / Operating Case Temperature Tstg, TC
*
55 to +150 °C
Operating Junction Temperature TJ
*
55 to +150 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/µs
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Case RθJC 0.4 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(I 300 A)
VFTJ = 25°C TJ = 100°CVolts
(IF = 300 A) 0.57 0.5
Maximum Instantaneous Reverse Current
(V 35 V)
IRTJ = 25°C TJ = 100°CmA
(VR = 35 V) 10 250
(1) Pulse Test: Pulse Width
v
380 µs, Duty Cycle
v
2%.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
POWERTAP III and SWITCHMODE are trademarks of Motorola, Inc.
Motorola, Inc. 1998
Order this document
by MBRP30035L/D
SEMICONDUCTOR TECHNICAL DATA
1
2
SCHOTTKY BARRIER
RECTIFIER
300 AMPERES
35 VOLTS
POWERTAP III
CASE 357D–01
1
2
Rev 1
MBRP30035L
2Rectifier Device Data
PACKAGE DIMENSIONS
CASE 357D–01
ISSUE O
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.520 1.560 38.61 39.62
B0.783 0.813 19.89 20.65
C0.615 0.635 15.62 16.13
D0.152 0.162 3.86 4.11
E0.120 0.130 3.05 3.30
F0.435 0.445 11.05 11.30
H0.007 0.030 0.18 0.76
L0.210 0.230 5.33 5.84
N1/4–20UNC–2B 1/4–20UNC–2B
Q0.152 0.162 3.86 4.11
R1.175 1.195 29.85 30.35
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. TERMINAL PENETRA TION: 5.97 (0.235) MAXIMUM.
R
DB
N
AQ
L2 PL
C
FH
E
RADIUS
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MBRP30035L/D
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