NOTES : 1.Measured at 1.0MHz and applied reverse volt age of 4.0V DC.
2.Thermal Resistance Junction to Lead .
V
RMS
V
DC
V
RRM
I
AV)
1N5391 thru 1N5399
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
MECHANICAL DATA
Case : JEDEC DO-15 molded plastic
Polarity : Color band denotes cathode
Weight : 0.015 ounces, 0.4 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICA L CHARA CTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
1N
5393
200
140
200
1N
5391
50
35
50
1N
5397
600
420
600
1N
5392
100
70
100
1N
5396
500
350
500
1N
5395
400
280
400
1N
5394
300
210
300
Maximum Av erage Forward Rectified Current
.375"(9.5mm) Lead Lengths
@T
L
=
70 C
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
1.5
T
J
Operating Temperature Range
-55 to +125 C
T
STG
Storage Tem perature Range
-55 to +150 C
Typical Thermal Resistance (Note 2)
R
0JL
26
C/W
C
J
Typical Junction
Capacitance (Note 1)
20
pF
I
R
Maximum DC Rev erse Cu rrent
at Rated DC Blocking Voltage
@T
J
=100 C
@T
J
=25 C 5.0
50
uA
V
F
Maximum forward Voltage at 1.5A DC
1.1
V
I
FSM
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
50
A
A
V
UNIT
V
V
Max.
All Dimensions in millimeter
Min.
DO-15
Dim.
A
D
C
B 25.4 7.60
-
5.8 0
0.71
2.60 3.60
0.86
DO-15
A
C
D
A
B
CHARACTERISTICS SYMBOL
1N
5398
800
560
800
1N
5399
1000
700
1000
REVERSE VOLTAGE
- 50
to
100 0
Volts
FORWARD CURRENT
- 1.5
Amperes
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDAD01
RATING AND CHARACTERIST IC CURVES
1N5391 thru 1N5399
FIG.2 - MAXIMUM NON-REPETIT IVE SURGE CURRENT
NUMBER OF CYCLES A T 60Hz
PE AK FORWARD SURGE CURR ENT,
AMPERES
1510 50 100
220
0
10
20
30
40
50
60
Single Half -Sin e-Wav e
(JEDEC METHOD)
AV ERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
25
75 100 125 150
1.0
050
0.5
1.5
175
SINGLE PHASE HALF WAVE 60H z
RESI S TI V E OR INDUCT I V E LOA D
0.375" (9.5mm) L E A D LE NG T H S
LEAD TEMPERATURE , C
INSTANTANEOUS FO RWARD CURRENT ,(A)
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.2 0.4 1.2 1.4
0
0.1
1.0
10
0.6 0.8 1.0
0.01 1.8
1.6
TJ= 25 C
PULSE WIDTH 300us
FIG.3 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLT AG E , VO LTS
10
1100
100
10
14
T
J
= 25 C, f= 1MHz
REV. 2, 01-Dec-2000, KDAD01
