PD - 97690A AUTOMOTIVE GRADE AUIRF2805 Features l Advanced Planar Technology l Low On-Resistance l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* HEXFET(R) Power MOSFET V(BR)DSS D G S 55V RDS(on) typ. max ID (Silicon Limited) 3.9m 4.7m 175A ID (Package Limited) 75A Description D Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRF2805 G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 175 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 120 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 75 Units A c 700 PD @TC = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS 330 2.2 20 W W/C V mJ IDM Pulsed Drain Current d EAS Single Pulse Avalanche Energy (Thermally Limited) 450 EAS (tested) Single Pulse Avalanche Energy Tested Value 1220 c i IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw h See Fig. 12a, 12b, 15, 16 -55 to + 175 C 300 10 lbf in (1.1N m) y Thermal Resistance Max. --- 0.45 Case-to-Sink, Flat, Greased Surface 0.50 --- Junction-to-Ambient --- 62 Junction-to-Case RCS RJA j Parameter y Typ. RJC A mJ Units C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 12/14/11 AUIRF2805 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 55 --- --- 2.0 91 --- --- --- --- --- 0.06 3.9 --- --- --- --- --- --- --- --- 4.7 4.0 --- 20 250 200 -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 104A V VDS = VGS, ID = 250A S VDS = 25V, ID = 104A A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- --- --- --- --- --- --- --- 150 38 52 14 120 68 110 4.5 230 57 78 --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 5110 1190 210 6470 860 1600 --- --- --- --- --- --- S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V nC ns nH g pF ID = 104A VDS = 44V VGS = 10V VDD = 28V ID = 104A RG = 2.5 VGS = 10V Between lead, f f D G Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 175 ISM (Body Diode) Pulsed Source Current --- --- 700 VSD trr Qrr ton Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 80 290 1.3 120 430 (Body Diode)c Conditions MOSFET symbol A V ns nC D showing the integral reverse G S p-n junction diode. TJ = 25C, IS = 104A, VGS = 0V TJ = 25C, IF = 104A di/dt = 100A/s f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.08mH RG = 25, IAS = 104A. (See Figure 12). ISD 104A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. 2 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.08mH, RG = 25, IAS = 104A. Ris measured at TJ of approximately 90C. www.irf.com AUIRF2805 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 N/A Class M4 (+/- >800V) AEC-Q101-002 ESD Human Body Model Class H3A (+/- 5000V) AEC-Q101-001 Charged Device Model Class C5 (+/- >2000V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 AUIRF2805 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 4.5V 10 20s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 4.5V 20s PULSE WIDTH Tj = 175C 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 T J = 175C 100 VDS = 25V 20s PULSE WIDTH 10 4.0 5.0 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10.0 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current A) T J = 25C 160 T J = 175C 120 T J = 25C 80 40 VDS = 25V 20s PULSE WIDTH 0 0 40 80 120 160 200 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com ance AUIRF2805 10000 Crss Coss = Cgd = Cds + Cgd 6000 Ciss 4000 2000 Coss 1 16 12 8 4 0 Crss 0 10 0 100 1000.0 10000 ID, Drain-to-Source Current (A) T J = 175C 10.0 TJ = 25C 1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 80 120 160 200 240 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD, Reverse Drain Current (A) 40 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.0 VDS= 44V VDS= 28V ID= 104A VGS , Gate-to-Source Voltage (V) 8000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED 1000 100 100sec 1msec 10 1 1.8 OPERATION IN THIS AREA LIMITED BY RDS(on) Tc = 25C Tj = 175C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF2805 3.0 180 I D = 175A LIMITED BY PACKAGE 2.5 ID , Drain Current (A) 120 90 60 30 0 25 50 75 100 125 150 2.0 (Normalized) RDS(on) , Drain-to-Source On Resistance 150 1.5 1.0 0.5 V GS = 10V 0.0 -60 175 -40 -20 0 20 40 60 80 100 120 140 160 180 ( C) TJ , Junction Temperature TC , Case Temperature ( C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature (Z thJC ) 1 D = 0.50 0.1 0.20 Thermal Response 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 t1/ t 2 J = P DM x Z thJC +T C 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF2805 15V 1000 DRIVER L VDS D.U.T + V - DD IAS VGS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 800 RG ID 43A 87A TOP BOTTOM 104A 600 400 200 0 25 50 75 100 125 Starting Tj, Junction Temperature 150 175 ( C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 4.0 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F VGS(th) Gate threshold Voltage (V) VG ID = 250A 3.0 2.0 .3F D.U.T. + V - DS 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) VGS 3mA IG ID Current Sampling Resistors Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRF2805 10000 Avalanche Current (A) Duty Cycle = Single Pulse 1000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 100 0.05 0.10 10 1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOT TOM 10% Duty Cycle ID = 104A 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature 8 www.irf.com AUIRF2805 D.U.T Driver Gate Drive + - - P.W. Period * D.U.T. ISD Waveform Reverse Recovery Current + V DD dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer RG Period P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width s Duty Factor Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF2805 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF2805 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF2805 Ordering Information Base part number Package Type Standard Pack AUIRF2805 TO-220 Form Tube www.irf.com Complete Part Number Quantity 50 AUIRF2805 11 AUIRF2805 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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