Si7106DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.0062 at VGS = 4.5 V 19.5 0.0098 at VGS = 2.5 V 15.5 Qg (Typ.) 17.5 nC PowerPAK 1212-8 * Halogen-free Option Available * TrenchFET(R) Power MOSFET * New Low Thermal Resistance PowerPAK(R) Package with Low 1.07 mm Profile * PWM Optimized * 100 % Rg Tested RoHS COMPLIANT APPLICATIONS * Synchronous Rectification S 3.30 mm 3.30 mm 1 S 2 D S 3 G 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7106DN-T1-E3 (Lead (Pb)-free) Si7106DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 12 TA = 25 C Continuous Drain Current (TJ = 150 C)a TA = 70 C ID a IS Continuous Source Current (Diode Conduction) Single Avalanche Current L = 0 1 mH Single Avalanche Energy TA = 25 C Maximum Power Dissipationa TA = 70 C 12.5 15.6 10.0 A 3.2 1.3 IAS 30 45 mJ 3.8 1.5 2.0 0.8 TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) 60 EAS PD V 19.5 IDM Pulsed Drain Current Unit - 55 to 150 b, c W C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t 10 s Steady State Steady State RthJA RthJC Typical Maximum 24 33 65 81 1.9 2.4 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73142 S-81529-Rev. E, 30-Jun-08 www.vishay.com 1 Si7106DN Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 A Gate-Body Leakage IGSS VDS = 0 V, VGS = 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 C 5 VDS 5 V, VGS = 4.5 V A 40 A VGS = 4.5 V, ID = 19.5 A 0.0051 0.0062 VGS = 2.5 V, ID = 15.5 A 0.0081 0.0098 gfs VDS = 15 V, ID = 19.5 A 105 VSD IS = 3.2 A, VGS = 0 V 0.8 1.2 17.5 27 RDS(on) Forward Transconductancea 1.5 100 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 10 V, VGS = 4.5 V, ID = 19.5 A f = 1 MHz 0.7 td(on) Turn-On Delay Time tr Rise Time VDD = 10 V, RL = 10 ID 1 A, VGEN = 10 V, Rg = 6 td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 6.6 2.8 IF = 3.2 A, dI/dt = 100 A/s 1.4 2.1 25 40 15 25 50 75 12 20 30 60 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 VGS = 10 thru 2.5 V 48 I D - Drain Current (A) I D - Drain Current (A) 48 36 24 2V 12 36 24 TC = 125 C 12 25 C - 55 C 1.5 V 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 73142 S-81529-Rev. E, 30-Jun-08 Si7106DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 3500 0.016 Ciss 2800 0.012 C - Capacitance (pF) R DS(on) - On-Resistance () 0.014 0.010 VGS = 2.5 V 0.008 0.006 VGS = 4.5 V 2100 1400 0.004 Coss 700 0.002 Crss 0 0.000 0 10 20 30 40 50 0 60 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 5 1.6 VDS = 10 V ID = 19.5 A VGS = 4.5 V ID = 19.5 A 1.4 3 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1 1.2 1.0 0.8 0 0 4 8 12 16 0.6 - 50 20 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature 60 0.024 R DS(on) - On-Resistance () I S - Source Current (A) 0.020 TJ = 150 C 10 TJ = 25 C ID = 5 A 0.016 0.012 ID = 19.5 A 0.008 0.004 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73142 S-81529-Rev. E, 30-Jun-08 5 www.vishay.com 3 Si7106DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.4 50 ID = 250 A 40 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Temperature (C) 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited P(t) = 0.0001 Limited by RDS(on)* I D - Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 P(t) = 10 TA = 25 C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73142 S-81529-Rev. E, 30-Jun-08 Si7106DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73142. Document Number: 73142 S-81529-Rev. E, 30-Jun-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1