Vishay Siliconix
Si7106DN
Document Number: 73142
S-81529-Rev. E, 30-Jun-08
www.vishay.com
1
N-Channel 20-V (D-S) Fast Switching MOSFET
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• PWM Optimized
• 100 % Rg Tested
APPLICATIONS
• Synchronous Rectification
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A) Qg (Typ.)
20 0.0062 at VGS = 4.5 V 19.5 17.5 nC
0.0098 at VGS = 2.5 V 15.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm 3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7106DN-T1-E3 (Lead (Pb)-free)
Si7106DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ± 12
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
19.5 12.5
A
TA = 70 °C 15.6 10.0
Pulsed Drain Current IDM 60
Continuous Source Current (Diode Conduction)aIS3.2 1.3
Single Avalanche Current L = 0 1 mH IAS 30
Single Avalanche Energy EAS 45 mJ
Maximum Power DissipationaTA = 25 °C PD
3.8 1.5 W
TA = 70 °C 2.0 0.8
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)b, c 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat ≤ 10 s RthJA
24 33
°C/W
Steady State 65 81
Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4
RoHS
COMPLIANT
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Document Number: 73142
S-81529-Rev. E, 30-Jun-08
Vishay Siliconix
Si7106DN
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect devi ce reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V 1µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C 5
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = 4.5 V 40 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 19.5 A 0.0051 0.0062 Ω
VGS = 2.5 V, ID = 15.5 A 0.0081 0.0098
Forward Transconductanceagfs VDS = 15 V, ID = 19.5 A 105 S
Diode Forward VoltageaVSD IS = 3.2 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = 10 V, VGS = 4.5 V, ID = 19.5 A
17.5 27
nCGate-Source Charge Qgs 6.6
Gate-Drain Charge Qgd 2.8
Gate Resistance Rgf = 1 MHz 0.7 1.4 2.1 Ω
Tur n - O n D e l ay Time td(on)
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
25 40
ns
Rise Time tr15 25
Turn-Off Delay Time td(off) 50 75
Fall Time tf12 20
Source-Drain Reverse Recovery Time trr IF = 3.2 A, dI/dt = 100 A/µs 30 60
Output Characteristics
0
12
24
36
48
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS = 10 thru 2.5 V
1.5 V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
2 V
Transfer Characteristics
0
12
24
36
48
60
0.0 0.5 1.0 1.5 2.0 2.5
25 °C
TC = 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 73142
S-81529-Rev. E, 30-Jun-08
www.vishay.com
3
Vishay Siliconix
Si7106DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0 102030405060
RDS(on)
ID - Drain Current (A)
VGS = 2.5 V
VGS = 4.5 V
- On-Resistance (Ω)
0
1
2
3
4
5
048121620
VDS = 10 V
ID = 19.5 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
V
GS
VSD - Source-to-Drain Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 25 °C
60
10
1
- Source Current (A)IS
TJ = 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
700
1400
2100
2800
3500
0 5 10 15 20
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Coss
Crss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
VGS = 4.5 V
ID = 19.5 A
TJ - Junction Temperature (°C)
RDS(on) - On-Resistance
(Normalized)
0.000
0.004
0.008
0.012
0.016
0.020
0.024
012345
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 19.5 A
I
D
= 5 A
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Document Number: 73142
S-81529-Rev. E, 30-Jun-08
Vishay Siliconix
Si7106DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)V
GS(th)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
0.01
0
1
40
50
10
600
Time (s)
30
20
Power (W)
0.1 10 100
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
1
0.1 1 10 100
0.01
10
TA = 25 °C
Single Pulse
- Drain Current (A)I
D
0.1
IDM Limited
ID(on)
Limited
BVDSS Limited
P(t) = 10
DC
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
Limited by
RDS(on)*
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Document Number: 73142
S-81529-Rev. E, 30-Jun-08
www.vishay.com
5
Vishay Siliconix
Si7106DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73142.
Normalized Thermal Transient Impedance, Junction-to-Case
10-3 10-2 110-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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