NEC / NPN SILICON TRANSISTOR 2$C3209 DESCRIPTION The 2SC3209 is designed for use in TV chroma output circuits and TV horizontal deflection output circuits. PACKAGE DIMENSIONS / in millimeters (inches) . 0 MAX. 12 FEATURES @ High voltage VcEo 2300 V (0.275 MAX.) (0.047) High Electrostatic- (E-B reverse bias, C=2 300 pF) of No 7 Discharge-Resistant VesprR: TYP. 1000 V Ss 23 on ~ am x Sg ABSOLUTE MAXIMUM RATINGS too) THT 12 Zoo =2 Maximum Temperatures 06-01 as = Oe zz Storage Temperature........... 55 to +150 C 0,024) 06,01 == Junction Temperature ......... 150 C Maximum | 06-01 SS . eT (0.024) Maximum Power Dissipation (Tg= 25 C) (0.028) _ woe 7 L?7 Total Power Dissipation .............--- 1.0W (oosh (6.067) BZ wan xt . : Maximum Voltages and Currents (T= 25 C) (+ a [2 (0.022) 128 Veso Collector to Base Voltage ........ 300 V me Ss Oo Vceo Collector to Emitter Voltage ...... 300 V 1. EMITTER Vego Emitter to Base Voltage .......... 5.0V e eege oTOR lc Collector Current............. 200 mA ELECTRICAL CHARACTERISTICS (T,=25 C) SYMBOL CHARACTERISTIC MIN, TYP. MAX. UNIT TEST CONDITIONS hee * DC Current Gain 60 150 250 Voce = 10 V, Ilo =10mA ta Delay Time 1.0 US Vec =30V tr Rise Time 1.0 MS ic = 100 mA tstg Storage Time 2.0 us Ip1 =Ipa=10mA tt Fall Time 1.0 us fr Gain Bandwidth Product 50 MHz VceE = 30 V, Ip =-10 mA VESDR Efectrostatic-Discharge-Resistant 1000 Vv See Test Circuit Cob Output Capacitance 28 3.5 pF Veg = 30 V, le = 0, f = 1.0 MHz IcBo Collector Cutoff Current 100 nA Voce = 200 V, Ie =0 leBpo Emitter Cutoff Current 100 nA Veg =5.0V,1=0 Vee * Base to Emitter Voltage 600 670 700 mV Vee =10V, Ic =10mMA VcE (sat) * Collector Saturation Voltage 0.15 1.5 v I = 50 mA, Ig = 5.0 mA VBE lsat) Base Saturation Voltage 0.80 1.5 Vv I = 50 mA, Ip = 5.0 mA * Pulsed PWS300 us, duty cyclex2 % Classification of heey Rank M L K Range 60 120 100 200 160 250 Test Conditions: Voce = 10V,Ic=10mA 339 2SC3209 NEC TYPICAL CHARACTERISTICS (Tg= 25 C) SAFE OPERATING AREAS TOTAL POWER DISSIPATION vs. (TRANSIENT THERMAL COLLECTOR CURRENT vs. AMBIENT TEMPERATURE RESISTANCE METHOD) COLLECTOR TO EMITTER VOLTAGE 1.2 1000 1 = Free air < 500 g 10 - = 3 = L 10 s ~ 3 0.8 = 200 S a 5 5 a 6 g 08 5? S 6 2 65 8 ws 04 & & k=} i ; 4 i 2 2 t 0.2 20 ~ 9 L 10. 0 25 50 75 100 125 150 10.20 50 100 200 500 1000 0 TaAmbient Temperature"C VcECollector to Emitter VoitageV VcoeCoilector to Emitter VoltageV COLLECTOR SATURATION VOLTAGE, COLLECTOR CURRENT vs. DC CURRENT GAIN vs. BASE SATURATION VOLTAGE vs, BASE TO EMITTER VOLTAGE COLLECTOR CURRENT COLLECTOR CURRENT 500 = > Vog=10 V 500 CE=10 7 5 Ta= =1 . oo > a=25 c 200 3 | . _ = 200 Zo a=75 C | 100 S 100 =e ? Th & 50 5 50 seo 4 5 5 SS 0 So 20 Ze Bs) 8 20 2 us P&P 3 10 9 10 BE 02 vet Ge uw 5 B 5 & 3 z 0.1 2 2 Tt 0.05 Ta=25 C 2 1 2 Tg=25 C 1 0102051 2 5 1020 501002005001000 & 2 0.02 =75 uw ~" 04 05 06 07 08 09 10 ICollector CurrentmA 2 Zoo} VgeBase to Emitter VoltegeV 1 50 100 200 5001 I Collector CurrentmA GAIN BANDWIDTH PRODUCT vs. OUTPUT CAPACITANCE vs SWITCHING TIME vs. EMITTER CURRENT COLLECTOR To BASE VOLTAGE COLLECTOR CURRENT VcE=30 V 1 E a ~ 2 = 5 % 2 50 f=1 MHz 2 = e E g 20 Ze 2 s S 10 ge 3 Oo 2 e 1 2 yg = 2 2 6 be 0.5 a S 3 os c l 2 . s 8 1 a 0.2 oS o a t r 2 1 50100200 5001000 if gy - Vcp~Collector to Base VoltageV = = > 9.05 J - -51 50~ 500 1000 38 . 1 = 0.02 \E~Emitter CurrentmA ol * 0.01 10 20 50 100200 500 1000 I-~-Collector Current mA 340 NEC 2$C3209 ELECTROSTATIC-DISCHARGE-RESISTANT TEST CIRCUIT LLECTOR Open COLLE TEST CONDITION 1) E-B reverse bias 2) C= 2300 pF 3) Apply one shot pluse to D.U.T. (Transistor Under the Test} by SW. JUDGEMENT REJECT; BVEgO waveform defect : C=2 300 pF As a result if D.U.T. is not rejected, apply higher voltage to capacitor and test again. : 341