AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D D Low On-resistance D D BVDSS -30V RDS(ON) 20m ID Fast Switching Characteristic RoHS Compliant SO-8 S S S -9A G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units - 30 V + 20 V Continuous Drain Current 3 -9 A Continuous Drain Current 3 -7.3 A -50 A 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 50 /W 1 200811216 AP4435GM-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. -30 - - V VGS=-10V, ID=-7A - - 20 m VGS=-4.5V, ID=-5A - - 32 m VGS=0V, ID=-250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-7A - 16 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS=+20V - - +100 nA ID=-7A - 18 29 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 10 - nC 2 td(on) Turn-on Delay Time VDS=-15V - 8 - ns tr Rise Time ID=-1A - 6.6 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 44 - ns tf Fall Time RD=15 - 34 - ns Ciss Input Capacitance VGS=0V - 1175 1690 pF Coss Output Capacitance VDS=-25V - 195 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 190 - pF Min. Typ. IS=-2.1A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-7A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4435GM-HF 50 50 o -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) 40 30 o 40 V G = -3.0V 20 10 30 V G = -3.0V 20 10 0 0 0 1 2 3 4 0 2 4 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 32 I D = -7A V G = -10V I D = -5A T A =25 o C 1.4 Normalized RDS(ON) 28 RDS(ON) (m) -10V -7.0V -5.0V -4.5V T A =150 C -ID , Drain Current (A) T A =25 C 24 20 1.2 1.0 0.8 16 0.6 12 2 4 6 8 -50 10 0 50 100 150 o -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10 1.8 1.6 T j =25 o C T j =150 o C 6 -VGS(th) (V) -IS(A) 8 1.4 4 1.2 2 1 0 0.8 0.1 0.3 0.5 0.7 0.9 1.1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4435GM-HF f=1.0MHz 10000 10 I D = -7A V DS = -24V 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 C iss 1000 4 C oss C rss 2 100 0 0 10 20 30 1 40 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10.00 100us 1ms 1.00 10ms 100ms 1s 0.10 o T A =25 C Single Pulse DC Normalized Thermal Response (Rthja) 100.00 -ID (A) 9 -V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse 0.01 Rthja = 125/W 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 T j =25 o C V DS = -5V T j =150 o C VG -ID , Drain Current (A) 30 QG -4.5V QGS 20 QGD 10 Charge Q 0 0 1 2 3 4 5 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 0.90 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4435GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product 5