TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/370
Devices Qualified Level
2N3442
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 140 Vdc
Collector-Base Voltage VCBO 160 Vdc
Collector-Emitter Voltage VCER 150 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Base Current IB 7.0 Adc
Collector Current IC 10 Adc
Total Power Dissipation @ TA = 250C (1)
@ TC = 250C (2) PT 6.0
117 W
W
Operating & Storage Junction Temperature Range TJ, Tstg -55 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 1.5 0C/W
1) Derate linearly 34.2 mW/0C for TA > 250C
2) Derate linearly 668 mW/0C for TC > 250C
TO-3* (TO-204AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage
IC = 3.0 Adc V(BR)CEO 140 Vdc
Collector-Emitter Breakdown Voltage
IC = 1.5 Adc, RBE = 100 Ω V(BR)CER 150 Vdc
Collector-Emitter Breakdown Voltage
IC = 1.5 Adc, VEB = 1.5 Vdc V(BR)CEX 160 Vdc
Collector-Base Cutoff Current
VCB = 140 Vdc, VEB = 1.5 Vdc ICEX 1.0 mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc IEBO 1.0 mAdc
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