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MMBT3906SL — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.4
June 2015
MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
• General-Purpose Amplifier Transistor
• Ultra Small Surface Mount Package for All Types (Max. 0.43mm Tall)
• Suitable for General Switching and Amplification
• Well Suited for Portable Application
• As Complementary type, NPN MMBT3904SL is Recommended.
• Pb Free
Ordering Information
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Top Mark Package Packing Method
MMBT3906SL AB SOT-923F 3L Tape and Reel
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -200 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 to +150 °C
SOT-923F Marking : AB
C
BE
COLLECTOR
3
EMITTER
2
BASE
1
MMBT3906SL — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.4 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. DC Item are tested by pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Value Unit
PD
Power Dissipation, by RθJA 227 mW
Derate Above 25°C1.81mW/°C
RθJA Thermal Resistance, Junction-to-Ambient(2) 550 °C/W
Symbol Parameter Conditions Min. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V
BVCEO Collector-Emitter Breakdown Voltage IC = -1 mA, IB = 0 -40 V
BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5 V
ICEX Collector Cut-Off Current VCE = -30 V, VEB(OFF) = -0.3 V -50 nA
hFE DC Current Gain
VCE = -1.0 V, IC = -0.1 mA 60
VCE = -1.0 V, IC = -1 mA 80
VCE = -1.0 V, IC = -10 mA 100 300
VCE = -1.0 V, IC = -50 mA 60
VCE = -1.0 V, IC = -100 mA 30
VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -1.0 mA -0.25 V
IC = -50 mA, IB = -5.0 mA -0.40
VBE(sat) Base-Emitter Saturation Voltage IC = -10 mA, IB = -1.0 mA -0.65 -0.85 V
IC = -50 mA, IB = -5.0 mA -0.95
fTCurrent Gain-Bandwidth Product VCE = -20 V, IC = -10 mA,
f = 100 MHz 250 MHz
Cob Output Capacitance VCB = -5 V, IE = 0, f = 1 MHz 7.0 pF
Cib Input Capacitance VEB = -0.5 V, IC = 0, f = 1 MHz 15 pF
tdDelay Time
VCC = -3 V, IC = -10 mA,
IB1 = -IB2 = -1 mA
35 ns
trRise Time 35 ns
tsStorage Time 225 ns
tfFall Time 75 ns
MMBT3906SL — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.4 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current
Figure 5. Collector- Base Capacitance Figure 6. Power Derating
1 10 100
10
100
Vce=1V
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Current Gain
Collector Current, [mA]
10 100
100
1000
Ic=10*Ib
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Collector-Emitter Voltage,[mV]
Collector Current, [mA]
10 100
100
1000
Ic=10*Ib
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base- Emitter Voltage,[mV]
Collector Current, [mA]
10 20 30 40
1
10
100
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base-Collector Leakage Current,[nA]
Base-Collector Revere Voltage, [V]
0510
6
8
9
11
12
f=1mhz
Base- Collector Juntion Capacitance, Cob[pF]
Base- Collector Reverse Voltage, Vcb[V]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Power Dissipation, [mW]
Ambient Temperature, Ta[oC]
MMBT3906SL — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.4 4
Physical Dimensions
Figure 7. 3-LEAD, SOT923F, 0.4 mm TALL, FLAT TERMINAL
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www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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