Copy right@Daw in Electronic s Corp. All right reserv ed
DM2G150SH6NE
Nov. 2010
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
1/7
High Power Rugged Ty pe IGBT Module
Description
DA WIN ’ S I G B T module devices are optimized t o reduce losses
and swit ching noise in high f requency power condit ioning elect rical syst ems.
These I G BT modules are ideally suited for power invert ers, mot ors driv es
and ot her applications w here swit ching losses are s ign ificant port ion of t he
t ot a l losses.
Features
☞High Speed Switching
☞BVCES = 600V
☞Low Conduction Loss : VCE(sat) = 2.1 V (ty p.)
☞Fast & Soft Ant i-Paral lel FWD
☞Short circu it rated : Min. 10uS at TC=100℃
☞Reduced EM I and R FI
☞I solation Ty pe Package
Applications
Mot or Drives, High Power I nverters, Welding Machine,
I nduct ion Heat ing, UP S , C VCF , Robot ics , Serv o C ont rols,
High Speed SMPS
Absolute Maximu m Ratin g s@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
Equiv alent Circu it
E qu ivalent Circui t and Packag e
Package : 7DM-1 Series
Please see the package out line inf ormat ion
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
C o llec tor-E mitter Vo lta g e
Gat e-Emitter Voltage
Collect or Current
Pulsed Collector Current
Diode Cont inuous Forward Current
Diode Maximum Forward Current
Short C ircuit Wit hst and T ime
Maximum Power Dissipation
Operat ing Junction Temperature
St orage Temperature Range
I solation Volt age
Mount ing screw Torque :M6
Power te rminals screw Torque :M5
600
±20
175
150
300
150
300
10
568
-40 ~ 150
-40 ~ 125
2500
4.0
2.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
N.m
N.m
-
-
TC= 25℃
TC= 75℃
-
TC= 100℃
-
TC= 100℃
TC= 25℃
-
-
AC 1 minute
-
-
6
7
5
4
①②③
Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
Copy right@Dawin Electronic s Corp. All right reserv ed
DM2G150SH6NE
Nov. 2010
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
2/7
E l ectr ical Char acteristics o f I G BT @ TC=25℃(unless otherwise specified)
Symbol Parameter Values Unit
Conditions Min. Typ. Max.
C - E Breakdown Voltage
Temperat ure Coeff. of
Breakdown Voltage
G - E t hreshold volt age
Collector cutoff Current
G - E leakage Current
Collector to Emitter
sat uration v oltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on delay time
Tu rn o n ris e time
Turn off delay time
Turn off fall time
Turn on Swit ching Loss
Turn off Switching Loss
Tot al Switching Loss
Short C ircuit Wit hst and T ime
Tot al Gat e Charge
Gat e-Emitter Charge
Gate-Collect or Charge
600
-
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
6.5
-
-
2.1
2.4
12.840
14.00
3.54
70
80
115
120
5.4
11
16.4
-
460
130
190
-
-
8.5
250
±150
2.9
-
-
-
-
-
-
-
220
-
-
-
-
-
-
-
V
V/℃
V
uA
nA
V
V
nF
nF
nF
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC= 250uA
VGE = 0V , IC= 1.0m A
IC= 150mA , VCE = VGE
VCE = 600V , VGE = 0V
VGE =±20V
IC=150A, VGE=15V @TC= 25 ℃
IC=150A, VGE=15V @TC=100℃
VCE = 3 0 V , f = 1MH z
VGE =0V
VCC = 300V , IC=150A
VGE = ±15V
RG= 5.1 Ω
I nduct iv e Load, @ TC= 2 5 ℃
VCC = 300V, VGE = ±15V
@TC= 100℃
VCC = 300V
VGE =±15V
IC= 150A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off )
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Copy right@Dawin Electronic s Corp. All right reserv ed
DM2G150SH6NE
Nov. 2010
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
3/7
E l ectr ical Char acteristics o f FRD @ TC=25℃(unless otherwise specified)
Symbol Parameter Values UnitConditions Min. Typ. Max.
IF=150A
IF= 150A, VR=300V
di/ dt= -300A/ uS
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Diode Forw ard Voltage
Diode Reverse
Recov ery Time
Diode Peak Reverse
Rec over y Cur r e nt
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
1.6
1.7
120
140
30
47
2400
3290
2.1
-
140
-
45
-
3150
-
V
nS
A
nC
Th ermal Char acteristics and Wei g h t
Symbol Parameter Values UnitConditions Min. Typ. Max.
Junct ion-t o-Case(IG BT Part, P er 1/ 2 M odule)
Junct ion-t o-Case(DI O DE Part, Per 1/2 Module)
Case-t o-Sink ( Conduct iv e grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.22
0.49
-
200
-
-
0.05
-
RθJC
RθJC
RθCS
Weight
Copy right@Dawin Electronic s Corp. All right reserv ed
DM2G150SH6NE
Nov. 2010
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
0
50
100
150
200
250
300
012345678
0
50
100
150
200
250
300
012 345 678
0
50
100
150
200
250
300
012345678
0
2
4
6
8
10
12
14
16
18
20
04 8121620
0
2
4
6
8
10
12
14
16
18
20
0 4 8 12 16 20
4/7
P erfor m an ce Cur ves
Collector – Emitter Voltage, VCE(sat) [V]
Coll e c tor Current, I C[A]
Collector – Emitter Voltage, VCE(sat) [V]
Coll e c tor Current, I C[A]
Collector – Emitter Voltage, VCE(sat) [V]
Coll e c tor Current, I C[A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage
characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
20V
15V 12V
VGE= 10V
Comm on Emitter
Tc= 25℃
20V 15V 12V
VGE= 10V
Comm on Emitter
Tc= 125℃
Gate – Emitter Voltage, VGE [V]
Collector – Emitter Voltage, VCE(sat) [V]
C ommon Emitte r
TC=25℃
200A150A
IC=100A
C ommon Emitte r
TC=125℃
200A150A
IC=100A
Gate – Emitter Voltage, VGE [V]
Collector – Emitter Voltage, VCE(sat) [V]
TC=125℃
TC=25℃
0
20
40
60
80
100
120
140
160
180
200
0.1 1 10 100 1000
Load Cu r r ent [ A]
Frequency [ KHz]
Duty cycle = 50%
TC=125℃
Power Dissipation = 160W
Copy right@Dawin Electronic s Corp. All right reserv ed
DM2G150SH6NE
Nov. 2010
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
0
30
60
90
120
150
180
210
0 20 40 60 80 100 120 140 160
0. 001
0.01
0.1
1
1.E -05 1.E-04 1.E -03 1.E -02 1.E -01 1.E+00 1.E+01
IGBT :
DIODE :
TC=25℃
5/7
Fig 7. Gate Charge Characteristics Fig 8. Transient Thermal Imp edance
Coll e c tor Current, I C[A]
Collector-Emitter Voltage, VCE [V]
Fig 9. RBSOA Characteristic
Collector-Emitter Voltage, VCE [V]
Fig 10. SCSOA Characteristic
Coll e c tor Current, I C[A]
Gate-Emitter Voltage ,VGE [V]
Gate Charge, Qg[nc] Rectangular Pulse Duration [sec]
Therma l Re sponse Zt hjc [ /W ]
℃
Case T emper ature, T c [ ℃]
Coll e c tor Current ,Ic [ A ]
Fig 12. rated Current vs. Case Temperature
0
3
6
9
12
15
0 100 2 00 3 00 4 00 5 00
C ommon Emitte r
RL= 5.1Ω
TC= 25 ℃
Vcc=300V
1
10
100
1000
0 100 200 300 400 500 600 700
Single N on-re petitive
Pulse Tj≤125℃
VGE = 15V
RG= 5.1Ω
TJ≤150℃
VGE ≥15V
0.1
1
10
100
1000
0.1 1 10 100 1000
Single N on-re petitive
Pulse Tc= 25℃
Curves must be derated
linerarly with increase
In temperature
DC Oper ation
1ms
100us
50us
Coll e c tor Current, I C[A]
Collector-Emitter Voltage, VCE [V]
Fig11. SOA characteristics
I c MA X. ( P ulsed)
I c MA X. ( Continuou s)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 100 200 300 400 500 600 700
Copy right@Dawin Electronic s Corp. All right reserv ed
DM2G150SH6NE
Nov. 2010
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140 160
0
50
100
150
200
250
300
01234
Fig 13. Power Dissipation vs. Case Temperature
Power Diss ip ation , PD[ W ]
Case T emper ature, T c [ ℃]Fig 14. Forward characteristics
Forward Drop Vol t age, VF[V]
F orwa rd Current , IF[A]
TC=125℃
TC=25℃
6/7
TJ≤150℃
VGE ≥15V
Fig 15. Capacitance characteristic
Capaci tance [pF ]
Collector – Emitt er Voltage, VCE [V]
0
5000
10000
15000
20000
25000
1 10 100
C ommon Emitte r
VGE=0V, f =1MHz
TC=25℃
Copy right@Dawin Electronic s Corp. All right reserv ed
DM2G150SH6NE
Nov. 2010
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
P ackage Ou t L ine In fo rmatio n
7/7
7DM-1
