> 200 MHz
Turn-off switching time toff < 100 ns
-ICon = 150 mA; -IBon = IBoff = 15 mA
DC Current Gain hFE > 30
fT
Transition frequency at f = 100 MHz
-IC = 50 mA; -VCE = 20 V
-VCE = 10V -IC = 500mA > 50
< 10
nA
uA
nA
< 50
< 50
60
250
600
IE = 0, -VCB = 50V, Tj=125oC< 20
Open emitter; -IC= 10uA, IE= 0
60
Emitter-base breakdown voltage
> 40
-VCE(Sat) < 1.6
< 2.6
-VEB = 0.5V, -VCE = 30V
-ICEX
-VEB = 3V, -VCE = 30V
-IBEX
Saturation Voltages
Collector-base breakdown voltage -V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VBE(Sat)
Collector-emitter breakdown voltage
mW
Storage Temperature Tstg
UNITS
Collector Base Voltage
-VCEO
-VCBO V
Collector Emitter Voltage
5.0
CMBT2907 CMBT2907A
60
Emitter Base Voltage -VEBO
DESCRIPTION SYMBOL
40
5.0
-55 to +150
150
CONDITIONS
K/W
oC
CMBT2907 CMBT2907A
500
Open collector; -IE= 10uA, IC= 0
Open base; -IC= 10mA, IB= 0 > 60
UNITS
Collector Cut Off Current
Base Current w/reverse biased emitter junction
mA
-ICBO IE = 0, -VCB = 50V < 20 < 10
SYMBOL
Rth(j-a)
Ptot
Tj
Collector Current -IC
DESCRIPTION
-ICBO
Junction to Ambient in free air
Power dissipation up to Tamb = 25 oC
Thermal Characteristics
Junction Temperature
-VBE(Sat) < 1.3
-IC = 150mA, -IB = 15mA
V
-IC = 500mA, -IB = 50mA
> 60
> 5.0
-VCE(Sat) < 0.4
PNP Silicon Planar Epitaxial Transistors
CMBT2907
Electrical Characteristics (at Ta=25 oC unless otherwise specified)
Unit: mm
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
1
2
3
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
SOT-23 SMD Package
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PNP Silicon Planar Epitaxial Transistors
CMBT2907
ns
< 100
-VEB = 2V, IC = Ic = 0 < 30
turn off time (ts + tf)
fall time
toff
Input Capacitance at f = 1 MHz Ci
Turn-off time when switched from
to cut-off with + IBM = 15 mA
pF
VCC = 30V
pF
< 30
tf
VCC = 6V
> 75
-VCE = 10V, -IC = 0.1mA
Output Capacitance at f = 1 MHz CO -VCB = 10V, IE = Ie = 0 < 8.0
Transition Frequency at f = 100 MHz fT -VCE=20V, -IC=50mA > 200 MHZ
> 30
> 100
> 50
> 35
-VCE = 10V, -IC = 10mA > 75 > 100
DC Current Gain hFE
-VCE = 10V, -IC = 150mA 100 to 300
-VCE = 10V, -IC = 1mA
-VCE = 10V, -IC = 500mA
> 50
storage time ts
-IC = 150mA, -IB = 15mA,
< 80
ns
Switching times (between 10% and 90%) -IC = 150mA, -IB = 15mA,
Turn-on time when switched to
delay time td< 10
rise time tr< 40
turn on time (td + tr) ton < 45
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