ie <i> BC 636 - BC 638 - BC 640 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Komplementadre NF-Treiberstufen. Komplementartypen zu BC 635/BC 637/BC 639 Applications: For complementary AF driver stages. Complementary to BC 635/BC 637/BC 639 Besondere Merkmale: Features: @ Hohe Verlustleistung @ High power dissipation @ Gepaart lieferbar @ Matched pairs available Vorlaufige technische Daten : Preliminary specifications [RS = Abmessungen in mm Dimensions in mm Normgehaduse Case 10 A3 DIN 41868 JEDEC TO 92 Z Gewicht - Weight max. 0,39 Absolute Grenzdaten BC 636 BC 638 BC 640 Absolute maximum ratings Kollektor-Emitter-Sperrspannung -UcEO 45 60 380 Vv Collector-emitter voltage Kollektorstrom -Io 1 A Collector current Kollektorspitzenstrom ~lom 1,5 A Collector peak current Gesamtverlustleistung Total power dissipation lamb = 25C Prot 1 Ww Sperrschichttemperatur fj 150 C Junction temperature Lagerungstemperaturbereich stg -55 ... +150 C Storage temperature range B 2/V.2. 495/0875 A1 141 BC 636 - BC 638 - BC 640 \ 741648 TH Prot os Rena = 125 C/W 0,6 156 C/W 0,4 0,2 tamb7" Warmewiderstande Min. Thermal resistances Sperrschicht-Umgebung Junction ambient /=3mm RthJA Kupferkiuhlflache 10x10 mm, 35 ym dick Rina Copper cooling area 10x10 mm, 35 um thickness Sperrschicht-Gehause Rihyc Junction case Statische KenngrBen DC characteristics lamb = 25C, falls nicht anders angegeben unless otherwise specified Kollektorreststrom Collector cut-off current ~ Ugg = 30V ~IcBo - Ugg = 30 V, tam = 125C ~!eBo 142 Typ. Max. 156 125 55 100 10 CIW CIW Ciw nA pA BC 636 - BC 638 - BC 640 Min. Typ. Max. Kollektor-Basis-Durchbruchspannung Collector-base breakdown voltage Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage BC 638 -UpRyceo) 60 BC 640 -Upryceo') 80 on << Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage ~ip=1pA - UBR)EBO 5 Vv Kollektor-Sattigungsspannung Collector saturation voltage - Ig = 500 mA, ~/p = 50 mA - Uogsat ') 0,5 Vv Basis-Emitter-Spannung Base-emitter voltage = _ 1 - Ugg = 2. V, -Ig = 500 mA ~ Upe') 1 Vv Kollektor-Basis-Gleichstromverhdltnis DC forward current transfer ratio ~UcE =2 V, Io = 150 mA Gruppe 6 BC 636, BC 638, BC 640 hee 5 40 95 Group Gruppe 10 BC 636, BC 638, BC 640 AEE 5 67 150 Group Gruppe 16 BC 636 Are) 106 236 Group UcE = 2 V, -i = 500 mA BC 636, BC 638,BC 640 fre) 25 Fir Paare gilt das Aee-Verhdltnis hee matched pairs ratio -Uce = 1V. ~I = 100 mA 1,4 Dynamische KenngrBen AC characteristics tamb = 25C Transitfrequenz Gain bandwidth product Uce = 5V, Ig = 50 mA, f = 30 MHz JT 50 MHz p 1) & = 0,01, ty = 0,3 ms T p 143