PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Data Sheet 1 of 15 Rev. 02, 2009-09-09
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
*See Infineon distributor for future availability.
Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs
designed for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced, RoHs-compliant package with slotted and
earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFB191501E
Package H-36248-2
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 1930 – 1990 MHz
Features
•Broadband internal matching
•Typical two-carrier WCDMA performance at
1990 MHz, 30 V
- Average output power = 35 W
- Linear gain = 18 dB
- Efficiency = 30%
- Intermodulation distortion = –35 dBc
•Typical CW performance, 1990 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
•Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
•Pb-free, RoHS-compliant
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
IMD (dBc)
0
5
10
15
20
25
30
35
40
Efficiency (%)
Efficiency
IMD Up
IMD Low
ACPR
PTFB191501F
Package H-37248-2
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 1985 MHz, ƒ2 = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps —18 —dB
Drain Efficiency ηD—30 —%
Intermodulation Distortion IMD —–35 —dBc
Data Sheet 2 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
*See Infineon distributor for future availability.
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 150 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 17 18 —dB
Drain Efficiency ηD42 44 —%
Intermodulation Distortion IMD —–30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.08 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.4 2.9 3.4 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC 0.29 °C/W
Ordering Information
Type and Version Package Type Package Description Shipping
PTFB191501E V1 H-36248-2 Thermally-enhanced slotted flange, single-ended Tray
PTFB191501E V1 R250 H-36248-2 Thermally-enhanced slotted flange, single-ended Tape & Reel 250 pcs
PTFB191501F V1 H-37248-2 Thermally-enhanced earless flange, single-ended Tray
PTFB191501F V1 R250 H-37248-2 Thermally-enhanced earless flange, single-ended Tape & Reel 250 pcs
Data Sheet 3 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.20 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-60
-55
-50
-45
-40
-35
-30
-25
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Drain Efficiency (%)
1990 MHz Low
1990 MHz Up
1960 MHz Low
1960 MHz Up
1930 MHz Low
1930 MHz Up
Two-carrier WCDMA 3GPP
VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
15
16
17
18
19
20
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
Drain Efficiency (%)
Gain
Efficiency
Typical Performance (data taken in a production test fixture)
CW Power Sweep
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz
14
15
16
17
18
19
20
41 43 45 47 49 51 53
Output Power (dBm)
Gain (dB)
5
15
25
35
45
55
65
Drain Efficiency (%)
Efficiency
Gain
Two-tone Broadband Performance
VDD = 30 V, IDQ = 1.20 A, POUT = 63 W
15
20
25
30
35
40
45
50
55
60
1890 1910 1930 1950 1970 1990 2010 2030
Frequency (MHz)
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
Return Loss (dB), IMD (dBc)
Gain
Efficiency
IRL
IMD3
Gain / Efficiency (dB / %)
Data Sheet 4 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
IMD (dBc)
5
10
15
20
25
30
35
40
45
50
55
Efficiency (%)
IMD3
Efficiency
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
15
16
17
18
19
20
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
Gain (dB)
5
15
25
35
45
55
Efficiency (%)
Efficiency
Gain
Two-tone Drive-up at Selected Frequencies
VDD = 30 V, IDQ = 1.20 A, Tone Spacing = 1 MHz
-70
-60
-50
-40
-30
-20
41 43 45 47 49 51 53
Output Power, PEP (dBm)
IMD (dBc)
1990 MHz
1960 MHz
1930 MHz
Intermodulation Distortion vs. Output Power
VDD = 30 V, IDQ = 1.20 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
-70
-60
-50
-40
-30
-20
40 45 50 55
Output Power, PEP (dBm)
IMD (dBc)
7th
5th
3rd
Typical Performance (cont.)
Data Sheet 5 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
CW Performance
Gain vs. Output Power
VDD = 30 V, ƒ = 1990 MHz
16
17
18
19
42 44 46 48 50 52 54
Output Power (dBm)
Power Gain (dB)
IDQ = 1.40 A
IDQ = 1.20 A
IDQ = 0.80 A
Typical Performance (cont.)
CW Performance
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz
16
17
18
19
20
21
43 44 45 46 47 48 49 50 51 52 53
Output Power (dBm)
Gain (dB)
10
20
30
40
50
60
Drain Efficiency (%)
–10 °C
25 °C
85 °C
Efficiency
Gain
Single-carrier WCDMA
VDD = 30 V, IDQ = 1.20A, f = 1990 MHz
3GPP_WCDMA, PAR = 8dB, BW 3.84MHz
-60
-50
-40
-30
-20
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
ACP (dBc)
0
10
20
30
40
Drain Efficiency (%)
ACP up
Efficiency
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 020 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage
0.40 A
1.53 A
2.67 A
3.80 A
4.93 A
6.07 A
Data Sheet 6 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Z Source Z Load
G
S
D
Broadband Circuit Impedance
0.1
0.2
0.1
0
.
3
0
.2
-
W
A
V
E
L
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Source
Z Load
2020 MHz
1900 MHz
Z0 = 50 Ω
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2020 3.91 –8.14 1.01 –3.97
1990 4.03 –8.30 1.01 –4.13
1960 4.15 –8.46 1.03 –4.29
1930 4.28 –8.62 1.04 –4.45
1900 4.42 –8.79 1.06 –4.62
See next page for Reference Circuit information
Data Sheet 7 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Reference Circuit
C104
20000 pF
C105
10 pF
C106
10000000 pF
TL111 TL112 TL113
12
3
TL114
TL103
TL104 TL105
TL106
TL107 TL108
TL109
C101
10 pF
TL121
TL122
TL123
TL124 TL125 TL126 TL127 TL128
TL129
TL130
TL110
VGS1
C801
100000 pF
C802
100000 pF
C803
100000 pF
C102
1000000 pF
C103
20000 pF
PORT
2
PORT
1
3
S3
In Out
NC NC
1
2 3
45
6 7
8
S2
S
C
B
E
1
2
3
4S1
TL102
12
3
TL101
C107
0.7 pF
R103
10 Ohm
R801
1000 Ohm
R802
1000 Ohm
R803
1200 Ohm
R804
1300 Ohm
R101
2000 Ohm
R102
5100 Ohm
1
2
3
TL115
1
2
3
TL116 1 2
3
TL117 1
2
3
TL118
1 2
3
TL119
12
3
TL120
GATE DUT
Pin 1
X RF_IN
b191501ef-v1_BD_in _08-30-09
C203
0.6 pF
C202
0.7 pF
TL215 TL216 TL217 TL218
1
2
3
4
TL219
1
2
3
4
TL201
C204
10 pF
C210
20000 pF
C209
20000 pF
C206
10 pF
C205
10 pF C207
10000000 pF
C212
10000000 pF
1 2
3
TL202
TL203 TL204 TL205 TL206 TL207
TL208
TL209
TL210
TL211
TL212
TL213
TL214
TL221
TL220 TL226
TL233
TL231
TL230
TL245
TL243
TL241
TL240
TL239
TL238
TL237
TL236
TL235
TL234
VDD2
VDD1
C211
1000000 pF
C208
1000000 pF
PORT
1
PORT
2
C213
0.6 pF
TL248
1 2
3
TL246
TL247
TL222
12
3
TL225
1 2
3
TL229
12
3
TL228
1 2
3
TL227
1 2
3
TL224
12
3
TL232
12
3
TL244
1 2
3
TL242
TL223
C201
0.7 pF
DRAIN DUT
Pin D RF_OUT
X
b191501ef-v1_BD_out_08-30-09
Reference circuit input schematic for ƒ = 1990 MHz
Reference circuit output schematic for ƒ = 1990 MHz
Er=4.5
H=30 mil
TMM/TMM4
Data Sheet 8 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)*
Circuit Assembly Information
DUT PTFB191501E or PTFB191501F LDMOS Transistor
INPUT PCB 0.762 mm [.030"] thick, εr = 4.5 TMM 4 2 oz. copper
OUTPUT PCB 0.762 mm [.030"] thick, εr = 4.5 TMM 4 2 oz. copper
C801
S1
C803
R802 C802
R804
S2
R801
R803
C107
C105
C102
R101
C104
C101
C103
R102
C106
R103
C210
C204
C213
C201
C208
C207
C209
C212
C206
C203
C211
C202
C205
S3
b191501ef -v1_CD_9-2-09
VDD
VDD
RF_OUTRF_IN
VDD
*Gerber files for this circuit available on request
Data Sheet 9 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Components List
Schematic ID Component Value Suggested Part Number Comment
Type Manufacturer
Input
C101 Chip capacitor 10 pF ATC ATC100B100FW500XB
C102 Chip capacitor 1000000 pF ATC 445-1411-2-ND
C103, C104 Chip capacitor 20000 pF ATC ATC100B102FW50XB
C105 Chip capacitor 10 pF ATC ATC100B100FW500XB
C106 Capacitor, 10 µF, 35 V 10000000 pF Digi-Key 399-1655-2-ND Tantalum
C107 Chip capacitor 0.7 pF ATC ATC100B0R7BW500XB
C801, C802, Chip capacitor 100000 pF ATC PCC104BCT-ND
C803
R101 Resistor 2000 ohm Digi-Key P2.0KECT-ND
R102 Resistor 5100 ohm Digi-Key P5.1KECT-ND
R103 Resistor 10 ohm Digi-Key P100ECT
R801, R802 Resistor 1000 ohm Digi-Key P1.0KECT-ND
R803 Resistor 1200 ohm Digi-Key P1.2KGECT-ND
R804 Resistor 1300 ohm Digi-Key P1.3KGECT-ND
S1 Transistor Infineon BCP56
S2 Voltage regulator National LM7805
Semiconductor
S3 Potentiometer 2k ohms Digi-Key 3224W-202ECT-ND
Output
C201 Chip capacitor 0.7 pF ATC 100B0R7BW500XB
C202 Chip capacitor 0.7 pF ATC 100B0R7BW500XB
C203 Chip capacitor 0.6 pF ATC 100B0R6BW500XB
C204 Chip capacitor 10 pF ATC 100B100FW500XB
C205 Chip capacitor 10 pF ATC 100B100FW500XB
C206 Chip capacitor 10 pF ATC 100B100FW500XB
C207 Capacitor, 10 µF, 35 V10000000 pF Garrett Electronics TPSE106K050R0400 Tantalum
C208 Chip capacitor 1000000 pF ATC 445-1411-2-ND
C209 Chip capacitor 20000 pF ATC 100B102FW50XB
C210 Chip capacitor 20000 pF ATC 100B102FW50XB
C211 Chip capacitor 1000000 pF ATC 445-1411-2-ND
C212 Capacitor, 10 µF, 35 V10000000 pF Garrett Electronics TPSE106K050R0400 Tantalum
C213 Chip capacitor 0.6 pF ATC 100B0R6BW500XB
Data Sheet 10 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 1990 MHz
Schematic ID Electrical 1st/4th Dimension 2nd Dimension 3rd Dimension
TL101 MTEE 6.87 Ω0.241 λW1 17.780 mm 700 mils W2 17.780 mm 700 mils W3 2.032 mm 80 mils
TL102 MLIN 132.58 Ω0.000 λW0.025 mm 1 mils L0.025 mm 1 mils
TL103 MSTEP W1 10.160 mm 400 mils W2 17.780 mm 700 mils
TL104 MLIN 50.98 Ω0.312 λW1.397 mm 55 mils L25.527 mm 1005 mils
TL105 MLIN 6.87 Ω0.029 λW17.780 mm 700 mils L2.159 mm 85 mils
TL106 MLIN 11.38 Ω0.019 λW10.160 mm 400 mils L1.397 mm 55 mils
TL107 MLIN 34.60 Ω0.016 λW2.540 mm 100 mils L1.270 mm 50 mils
TL108 MLIN 40.30 Ω0.180 λW2.032 mm 80 mils L14.478 mm 570 mils
TL109 MLIN 34.60 Ω0.016 λW2.540 mm 100 mils L1.270 mm 50 mils
TL110 MBENDA$ W0.889 mm 35 mils
TL111 MSTEP 50.98 0.031 W1 1.397 mm 55 mils W2 2.540 mm 100 mils
TL112 MSTEP 34.60 0.025 W1 2.540 mm 100 mils W2 2.032 mm 80 mils
TL113 MSTEP 40.30 0.126 W1 2.032 mm 80 mils W2 10.160 mm 400 mils
TL114 MTEE 6.87 Ω0.241 λW1 17.780 mm 700 mils W2 17.780 mm 700 mils W3 0.889 mm 35 mils
TL115 MTEE 20.46 Ω0.066 λW1 5.080 mm 200 mils W2 5.080 mm 200 mils W3 6.350 mm 250 mils
TL116 MTEE 53.88 Ω0.015 λW1 1.270 mm 50 mils W2 1.270 mm 50 mils W3 3.048 mm 120 mils
TL117 MTEE 30.35 Ω0.038 λW1 3.048 mm 120 mils W2 3.048 mm 120 mils W3 2.540 mm 100 mils
TL118 MTEE 40.30 Ω0.025 λW1 2.032 mm 80 mils W2 2.032 mm 80 mils W3 3.048 mm 120 mils
TL119 MTEE 30.35 Ω0.038 λW1 3.048 mm 120 mils W2 3.048 mm 120 mils W3 2.540 mm 100 mils
TL120 MTEE$ 65.15 Ω0.011 λW1 0.889 mm 35 mils W2 0.889 mm 35 mils W3 2.032 mm 80 mils
TL121 MLIN 30.35 Ω0.019 λW3.048 mm 120 mils L1.524 mm 60 mils
TL122 MLIN 40.30 Ω0.000 λW2.032 mm 80 mils L0.025 mm 1 mils
TL123 MLIN 65.15 Ω0.030 λW0.889 mm 35 mils L2.540 mm 100 mils
TL124 MLIN 65.15 Ω0.043 λW0.889 mm 35 mils L3.556 mm 140 mils
TL125 MLIN 65.15 Ω0.216 λW0.889 mm 35 mils L18.034 mm 710 mils
TL126 MLIN 46.07 Ω0.011 λW1.651 mm 65 mils L0.889 mm 35 mils
TL127 MLIN 46.07 Ω0.011 λW1.651 mm 65 mils L0.889 mm 35 mils
TL128 MLIN 65.15 Ω0.023 λW0.889 mm 35 mils L1.905 mm 75 mils
TL129 MLIN 30.35 Ω0.019 λW3.048 mm 120 mils L1.524 mm 60 mils
TL130 MBENDA W0.889 mm 35 mils
Data Sheet 11 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 1990 MHz
Schematic ID Electrical 1st/4th Dimension 2nd Dimension 3rd Dimension
TL201 MCROSS W1 25.654 mm 1010 mils W2 1.270 mm 50 mils W3 25.654 mm 1010 mils
W4 1.270 mm 50 mils
TL202 MTEE 132.58 Ω0.000 λW1 1.778 mm 70 mils W2 1.778 mm 70 mils W3 2.032 mm 80 mils
TL203 MTAPER 4.88 Ω0.026 λW1 25.654 mm 1010 mils W2 9.144 mm 360 mils L3.683 mm 145 mils
5.388 Ω9.144 mm380 mils W2 9.144 mm360 mils L3.683 mm145 mils
TL204 MTAPER 53.88 Ω0.082 λW1 9.144 mm 360 mils W2 2.794 mm 110 mils L1.270 mm 50 mils
53.88 ΩW2 2.794 mm110 mils L1.270 mm50 mils
TL205 MTAPER 53.88 Ω0.082 λW1 2.794 mm 110 mils W2 1.778 mm 70 mils L1.270 mm 50 mils
132.58 ΩW2 1.778 mm70 mils L1.270 mm50 mils
TL206 MSTEP W1 1.778 mm 70 mils W2 2.540 mm 100 mils
TL207 MSTEP W1 2.540 mm 100 mils W2 1.397 mm 55 mils
TL208 MLIN 43.96 Ω0.031 λW25.654 mm 1010 mils L0.025 mm 1 mils
TL209 MLIN 32.33 Ω0.022 λW1.270 mm 50 mils L6.731 mm 265 mils
TL210 MLIN 12.48 Ω0.037 λW1.270 mm 50 mils L6.731 mm 265 mils
TL211 MLIN 4.88 Ω0.125 λW25.654 mm 1010 mils L1.905 mm 75 mils
TL212 MLIN 43.96 Ω0.022 λW0.025 mm 1 mils L0.025 mm 1 mils
TL213 MLIN 132.58 Ω0.000 λW0.025 mm 1 mils L0.025 mm 1 mils
TL214 MLIN 40.30 Ω0.000 λW2.032 mm 80 mils L0.025 mm 1 mils
TL215 MLIN 43.96 Ω0.066 λW1.778 mm 70 mils L5.334 mm 210 mils
TL216 MLIN 34.60 Ω0.016 λW2.540 mm 100 mils L1.270 mm 50 mils
TL217 MLIN 34.60 Ω0.016 λW2.540 mm 100 mils L1.270 mm 50 mils
TL218 MLIN 50.98 Ω0.310 λW1.397 mm 55 mils L25.400 mm 1000 mils
TL219 MCROSS W1 9.144 mm 360 mils W2 0.025 mm 1 mils W3 9.144 mm 360 mils
W4 0.025 mm 1 mils
TL220 MSTEP$ W1 1.270 mm 50 mils W2 3.048 mm 120 mils
TL221 MSTEP$ W1 1.270 mm 50 mils W2 3.048 mm 120 mils
TL222 MSTEP$ W1 3.048 mm 120 mils W2 9.144 mm 360 mils
TL223 MSTEP$ W1 3.048 mm 120 mils W2 9.144 mm 360 mils
TL224 MTEE 30.35 Ω0.059 λW1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 3.048 mm 120 mils
TL225 MTEE 53.88 Ω0.057 λW1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 5.080 mm 200 mils
TL226 MLIN 40.30 Ω0.000 λW9.144 mm 360 mils L0.127 mm 5 mils
TL227 MTEE 40.30 Ω0.000 λW1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 2.540 mm 100 mils
TL228 MTEE 30.35 Ω0.059 λW1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 3.048 mm 120 mils
TL229 MTEE 12.48 Ω0.002 λW1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 5.080 mm 200 mils
TL230 MLIN 12.48 Ω0.002 λW9.144 mm 360 mils L0.127 mm 5 mils
TL231 MLIN 12.48 Ω0.002 λW9.144 mm 360 mils L0.127 mm 5 mils
TL232 MTEE 12.48 Ω0.002 λW1 9.144 mm 360 mils W2 9.144 mm 360 mils W3 2.540 mm 100 mils
TL233 MLIN 53.88 Ω0.037 λW9.144 mm 360 mils L0.127 mm 5 mils
Data Sheet 12 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 1990 MHz
Schematic ID Electrical 1st/4th Dimension 2nd Dimension 3rd Dimension
TL234 MBENDA$ W1.270 mm 50 mils
TL235 MBENDA$ W1.270 mm 50 mils
TL236 MLIN 53.88 Ω0.015 λW1.270 mm 50 mils L15.748 mm 620 mils
TL237 MLIN 53.88 Ω0.015 λW1.270 mm 50 mils L15.748 mm 620 mils
TL238 MLIN 12.48 Ω0.121 λW1.270 mm 50 mils L4.699 mm 185 mils
TL239 MLIN 12.48 Ω0.121 λW3.048 mm 120 mils L4.699 mm 185 mils
TL240 MLIN 12.48 Ω0.121 λW1.270 mm 50 mils L4.699 mm 185 mils
TL241 MLIN 12.48 Ω0.121 λW2.032 mm 80 mils L0.025 mm 1 mils
TL242 MTEE$ 12.48 Ω0.121 λW1 1.270 mm 50 mils W2 1.270 mm 50 mils W3 2.032 mm 80 mils
TL243 MLIN 12.48 Ω0.121 λW2.032 mm 80 mils L0.025 mm 1 mils
TL244 MTEE$ 30.35 Ω0.115 λW1 1.270 mm 50 mils W2 1.270 mm 50 mils W3 2.032 mm 80 mils
TL245 MLIN 40.30 Ω0.000 λW3.048 mm 120 mils L4.699 mm 185 mils
TL246 MTEE 50.98 Ω0.017 λW1 1.397 mm 55 mils W2 1.397 mm 55 mils W3 2.032 mm 80 mils
TL247 MLIN 50.98 Ω0.028 λW2.032 mm 80 mils L0.025 mm 1 mils
TL248 MLIN 50.98 Ω0.028 λW1.397 mm 55 mils L2.261 mm 89 mils
See next page for Package Outline Specifications
Data Sheet 13 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36248-2
C
L
34.04
[1.340]
19.81±0.20
[.780±.008]
1.02
[.040]
19.43 ±0.51
[.765±.020]
(45° X 2.72
[.107])
2X 12.70
[.500]
4.83±0.51
[.190±.020]
27.94
[1.100]
4X R1.52
[R.060]
2X R1.63
[R.064]
D
G
S
FLANGE 9.78
[.385]
0.0381 [.0015] -A-
248-cases: h-30248-2_po_9-F-08
C
L
C
L
3.61±0.38
[.142±.015]
SPH 1.57
[.062]
[.370 ]
+.004
–.006
LID 9.40+0.10
–0.15
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Data Sheet 14 of 15 Rev. 02, 2009-09-09
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
C
L
0.0381 [.0015]
2X 12.70
[.500]
19.43±0.51
[.765±.020]
19.81±0.20
[.780±.008]
SPH 1.57
[.062]
FLANGE 9.78
[.385]
S
G
D
( 45° X 2.72
[.107])
20.57
[.810]
-A-
3.61±0.38
[.142±.015]
1.02
[.040]
2X 4.83±0.51
[.190±.020]
248-cases: h-31248-2_po
C
L
C
L
[R.020 ]
+.015
–.005
4X R0.508 +0.381
–0.127
LID 9.40+0.10
–0.15
[.370 ]
+.004
–.006
Package Outline Specifications (cont.)
Package H-37248-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6Gold plating thickness: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 15 of 15 Rev. 02, 2009-09-09
PTFB191501EF V1
Confidential, Limited Internal Distribution
Revision History: 2009-09-09 Data Sheet
Previous Version: 2009-06-17, Preliminary Data Sheet
Page Subjects (major changes since last revision)
All Finalize data and remove Preliminary designation.
Add performance curves and reference circuit information.
Edition 2009-09-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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