ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1200
V
IC = 100
A
Die size: 12.6 x 12.6 mm
Doc. No. 5SYA 1304-00 Dec 07
• Low loss, rugged SPT technology
• Smooth switching for good EMC
• Minimized gate charge, short delay times
• Optimized for paralleling
• Large bondable emitter area
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1200
V
DC collector current IC 100 A
Peak collector current ICM Limited by Tvjmax 200 A
Gate-emitter voltage VGES -20 20 V
IGBT short circuit SOA tpsc VCC = 900 V, VCEM ≤ 1200 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Junction temperature Tvj -40 150 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
IGBT-Die
5SMX 12L1274
5SMX 12L1274
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1304-00 Dec 07 page 2 of 5
IGBT characteristic values 2)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 1 mA, Tvj = 25 °C 1200
V
Tvj = 25 °C 1.7 1.9 2.3 V
Collector-emitter
saturation voltage VCE sat IC = 100 A, VGE = 15 V Tvj = 125 °C 2.1 V
Tvj = 25 °C 100 µA
Collector cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 125 °C 300 µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -200
200 nA
Gate-emitter threshold voltage VGE(TO) IC = 4 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 100 A, VCE = 600 V, VGE = -15 ..15 V 985 nC
Input capacitance Cies 9.43
Output capacitance Coes 0.62
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 0.39 nF
Internal gate resistance RGint 4 Ω
Tvj = 25 °C 185
Turn-on delay time td(on) Tvj = 125 °C 210 ns
Tvj = 25 °C 60
Rise time tr
VCC = 600 V, IC = 100 A,
RG = 6.8 Ω, VGE = ±15 V,
Lσ = 60 nH,
inductive load Tvj = 125 °C 65 ns
Tvj = 25 °C 410
Turn-off delay time td(off) Tvj = 125 °C 470 ns
Tvj = 25 °C 50
Fall time tf
VCC = 600 V, IC = 100 A,
RG = 10 Ω, VGE = ±15 V,
Lσ = 60 nH,
inductive load Tvj = 125 °C 70 ns
Tvj = 25 °C 7.5
Turn-on switching energy Eon
VCC = 600 V, IC = 100 A,
VGE = ±15 V, RG = 6.8 Ω,
Lσ = 60 nH,
inductive load,
FWD: 5SLX12H1200 Tvj = 125 °C 11.8
mJ
Tvj = 25 °C 6.3
Turn-off switching energy Eoff
VCC = 600 V, IC = 100 A,
VGE = ±15 V, RG = 10 Ω,
Lσ = 60 nH,
inductive load Tvj = 125 °C 10.1 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM ≤ 1200 V 560 A
2) Characteristic values according to IEC 60747 - 9
5SMX 12L1274
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1304-00 Dec 07 page 3 of 5
Mechanical properties
Parameter Unit
Overall die
L x W 12.6 x 12.6 mm
exposed
front metal
L x W (except gate pad) 11.0 x 11.0 mm
gate pad L x W 1.2 x 1.2 mm
Dimensions
thickness 130 ± 20 µm
front (E) AlSi1 4 µm
Metallization 3) back (C) Al / Ti / Ni / Ag 1.8 µm
3) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
Emitter
G
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
5SMX 12L1274
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1304-00 Dec 07 page 4 of 5
0
50
100
150
200
012345
VCE [V]
IC [A]
25 °C
VGE = 15 V
125 °C
0
50
100
150
200
0123456789101112
VGE [V]
IC [A]
VCE = 20 V
125 °C
25 °C
Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0 50 100 150 200 250 300
IC [A]
Eon, Eoff [J]
Eon
Eoff
VCC = 600 V
RGon = 6.8 ohm
RGoff = 10 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0 10 20 30 40 50 60 70
RG [ohm]
Eon, Eoff [J]
VCC = 600 V
IC = 100 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
Eon
Eoff
Fig. 3 Typical switching characteristics vs
collector current Fig. 4 Typical switching characteristics vs
gate resistor
5SMX 12L1274
ABB Switzerland Ltd, Semiconductors reserves the
right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1304-00 Dec 07
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
0
5
10
15
20
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Qg [µC]
VGE [V]
V
CC
= 600 V
VCC = 800 V
IC = 100 A
Tvj = 25 °C
0.1
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs
collector-emitter voltage
