STGW30H60DFB, STGWT30H60DFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features * Maximum junction temperature: TJ = 175 C * High speed switching series * Minimized tail current 2 3 3 2 1 1 TO-247 * VCE(sat) = 1.55 V (typ.) @ IC = 30 A * Tight parameters distribution * Safe paralleling TO-3P * Low thermal resistance * Very fast soft recovery antiparallel diode Applications Figure 1. Internal schematic diagram C (2, TAB) * Photovoltaic inverters * High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order code Marking Package Packaging STGW30H60DFB GW30H60DFB TO-247 Tube STGWT30H60DFB GWT30H60DFB TO-3P Tube February 2016 This is information on a product in full production. DocID026676 Rev 2 1/18 www.st.com 18 Contents STGW30H60DFB, STGWT30H60DFB Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 TO-247, STGW30H60DFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 TO-3P, STGWT30H60DFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 DocID026676 Rev 2 STGW30H60DFB, STGWT30H60DFB 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 C 60 A IC Continuous collector current at TC = 100 C 30 A Pulsed collector current 120 A IF Continuous forward current at TC = 25 C 60 A IF VCES ICP(1) Parameter Continuous forward current at TC = 100 C 30 A IFP(1) Pulsed forward current 120 A VGE Gate-emitter voltage 20 V PTOT Total dissipation at TC = 25 C 260 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature range - 55 to 175 C TJ 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.58 C/W RthJC Thermal resistance junction-case diode 2.08 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID026676 Rev 2 3/18 Electrical characteristics 2 STGW30H60DFB, STGWT30H60DFB Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VGE = 15 V, IC = 30 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 30 A TJ = 175 C Forward on-voltage 2 IF = 30 A; TJ = 175 C 1.6 VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) V 1.75 1.7 Gate threshold voltage 2 1.65 IF = 30 A; TJ = 125 C VGE(th) Unit V 1.55 IF = 30 A VF Max. 600 VGE = 15 V, IC = 30 A VCE(sat) Typ. 5 6 2.6 V 7 V VCE = 600 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/18 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 520 V, IC = 30 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge DocID026676 Rev 2 Min. Typ. Max. Unit - 3659 - pF - 101 - pF - 76 - pF - 149 - nC - 25 - nC - 62 - nC STGW30H60DFB, STGWT30H60DFB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 37 - ns Current rise time - 14.6 - ns - 1643 - A/s 146 - ns - 23 - ns Turn-on current slope VCE = 400 V, IC = 30 A, RG = 10 , VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching energy - 383 - J Eoff(2) Turn-off switching energy - 293 - J Total switching energy - 676 - J Turn-on delay time - 35 - ns Current rise time - 16.1 - ns Turn-on current slope - 1496 - A/s - 158 - ns - 65 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 30 A, RG = 10 , VGE = 15 V, TJ = 175 C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching energy - 794 - J Eoff(2) Turn-off switching energy - 572 - J Total switching energy - 1366 - J Ets 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit - 53 - ns - 384 - nC - 14.5 - A - 788 - A/s trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 104 - J trr Reverse recovery time - 104 - ns Qrr Reverse recovery charge - 1352 - nC Irrm Reverse recovery current - 26 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 310 - A/s Err Reverse recovery energy - 407 - J IF = 30 A, VR = 400 V, di/dt=1000 A/s, VGE = 15 V, (see Figure 28) IF = 30 A, VR = 400 V, di/dt=1000 A/s, VGE = 15 V, TJ = 175 C, (see Figure 28) DocID026676 Rev 2 5/18 Electrical characteristics 2.1 STGW30H60DFB, STGWT30H60DFB Electrical characteristics (curve) Figure 2. Power dissipation vs. case temperature GIPG280120141353FSR Ptot (W) Figure 3. Collector current vs. case temperature GIPG280120141346FSR IC (A) 60 250 200 40 150 100 20 50 VGE 15V, TJ 175 C 0 0 25 50 VGE 15V, TJ 175 C 0 0 75 100 125 150 175 TC(C) Figure 4. Output characteristics (TJ = 25C) GIPG280120141156FSR IC (A) VGE =15 V 80 60 40 40 20 20 2 13V 3 4 0 0 VCE(V) Figure 6. VCE(sat) vs. junction temperature GIPG280120141440FSR VGE= 15V 11V 9V 80 60 VCE(sat) (V) GIPG280120141206FSR IC (A) VGE =15 V 9V TC(C) Figure 5. Output characteristics (TJ = 175C) 100 11V 1 75 100 125 150 50 13V 100 0 0 25 7V 2 1 3 4 VCE(V) Figure 7. VCE(sat) vs. collector current VCE(sat) (V) GIPG280120141446FSR VGE= 15V 2.4 2.2 IC= 60A 2.2 2.0 TJ= 175C 2.0 1.8 1.8 TJ= 25C IC= 30A 1.6 1.6 1.4 IC= 15A 1.2 -50 6/18 0 50 100 150 TJ(C) TJ= -40C 1.4 1.2 0 DocID026676 Rev 2 30 45 60 IC(A) STGW30H60DFB, STGWT30H60DFB Electrical characteristics Figure 8. Collector current vs. switching frequency GIPG280120141713FSR Ic [A] Figure 9. Forward bias safe operating area GIPG090720141330FSR IC (A) Vce(sat) limit 60 Tc=80C 100 50 Tc=100 C 40 10 s 10 100 s 30 1 ms 20 1 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG= 10 , VGE = 0/15 V, TJ =175C) 10 0 1 (single pulse TC = 25C, TJ 175C; VGE=15V) f [kHz] 10 Figure 10. Transfer characteristics IC (A) GIPG280120141330FSR 0.1 1 10 100 VCE(V) Figure 11. Diode VF vs. forward current GIPG090720141349FSR VF (V) Tj= 25 C 2.8 Tj= 175 C 100 TJ= -40C VCE =10 V 2.4 80 TJ= 25C 2 60 40 1.6 20 1.2 0 7 9 13 11 0.8 10 VGE(V) Figure 12. Normalized VGE(th) vs junction temperature AM16060v1 VGE(th) (norm) TJ= 175C 20 30 40 50 60 IF(A) Figure 13. Normalized V(BR)CES vs. junction temperature AM16059v2 V(BR)CES (norm) VCE= VGE IC= 1mA 1.1 IC= 2mA 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 TJ(C) DocID026676 Rev 2 0.9 -50 0 50 100 150 TJ(C) 7/18 Electrical characteristics STGW30H60DFB, STGWT30H60DFB Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage GIPG090720141358FSR C (pF) VGE (V) 16 Cies GIPG280120141455FSR VCC= 520V, IC= 30A IG= 1mA 14 1000 12 10 8 6 100 4 Coes Cres 10 0.1 1 100 10 0 0 VCE(V) Figure 16. Switching energy vs collector current E (J) 2 GIPG090720141414FSR VCC = 400V, VGE = 15V, RG = 10, TJ = 175C 120 160 Qg(nC) Figure 17. Switching energy vs gate resistance GIPG090720141421FSR E (J) 1420 1600 80 40 VCC = 400 V, VGE = 15 V, IC = 30 A, TJ = 175 C 1220 EON 1020 1200 EON 820 800 EOFF 620 EOFF 420 400 220 0 0 10 20 30 50 40 60 Figure 18. Switching energy vs temperature E (J) 800 20 3 IC(A) E (J) VCC= 400V, VGE= 15V, RG= 10, IC= 30A 24 31 38 RG() GIPG090720141440FSR TJ= 175C, VGE= 15V, RG= 10, IC= 30A 1600 EON EON 1200 EOFF 400 EOFF 800 200 8/18 17 Figure 19. Switching energy vs collectoremitter voltage GIPG090720141431FSR 600 0 20 10 400 60 100 140 TJ(C) DocID026676 Rev 2 0 150 250 350 450 VCE(V) STGW30H60DFB, STGWT30H60DFB Electrical characteristics Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance t (ns) GIPG100720141533FSR t (ns) TJ= 175C, VGE= 15V, RG= 10, VCC= 400V GIPG100720141549FSR TJ= 175C, VGE= 15V, IC= 30A, VCC= 400V tdoff tdoff 100 tf tdon 100 tdon 10 tf tr tr 1 0 10 20 30 IC(A) 50 40 Figure 22. Reverse recovery current vs. diode current slope Irm (A) 10 0 20 RG() 40 30 Figure 23. Reverse recovery time vs. diode current slope GIPG100720141607FSR GIPG110720140846FSR trr (s) IF = 30A, Vr = 400V IF = 30A, Vr = 400V 200 TJ =175C 60 10 150 40 TJ =175C 100 20 0 0 TJ =25C 500 0 0 1000 1500 2000 2500 di/dt(A/s) Figure 24. Reverse recovery charge vs. diode current slope Qrr (nC) 50 Err (J) IF = 30A, Vr = 400V 2000 1000 1500 2000 di/dt(A/s) Figure 25. Reverse recovery energy vs. diode current slope GIPG110720140854FSR TJ =175C TJ =25C 500 GIPG110720140859FSR IF = 30A, Vr = 400V 1000 TJ =175C 800 1500 600 TJ =25C 1000 400 500 0 0 200 500 1000 1500 2000 di/dt(A/s) DocID026676 Rev 2 0 0 TJ =25C 500 1000 1500 2000 di/dt(A/s) 9/18 Electrical characteristics STGW30H60DFB, STGWT30H60DFB Figure 26. Thermal impedance for IGBT ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 10/18 -4 10 -3 10 DocID026676 Rev 2 -2 10 -1 10 tp (s) STGW30H60DFB, STGWT30H60DFB Electrical characteristics Figure 27. Thermal impedance for diode DocID026676 Rev 2 11/18 Test circuits 3 STGW30H60DFB, STGWT30H60DFB Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit 9&& & $ $ 9 N / ) * ( % % ) & * N Q) 5* ) 9&& 9L9*0$; '87 ) ( ,* &2167 '87 N 9* N N 3: $0 Y Figure 30. Switching waveform $0Y Figure 31. Diode reverse recovery waveform GLGW 4UU 9* WUU ,) WV WI WU 9RII WFURVV ,& W' RQ WRQ W' RII WU ,RQ WRII W ,550 ,550 9550 WI GYGW $0Y 12/18 DocID026676 Rev 2 $0Y STGW30H60DFB, STGWT30H60DFB 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247, STGW30H60DFB Figure 32. TO-247 package outline B+ DocID026676 Rev 2 13/18 Package mechanical data STGW30H60DFB, STGWT30H60DFB Table 8. TO-247 package mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/18 Max. 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID026676 Rev 2 5.70 STGW30H60DFB, STGWT30H60DFB 4.2 Package mechanical data TO-3P, STGWT30H60DFB Figure 33. TO-3P drawing 8045950_B DocID026676 Rev 2 15/18 Package mechanical data STGW30H60DFB, STGWT30H60DFB Table 9. TO-3P mechanical data mm Dim. 16/18 Min. Typ. Max. A 4.60 4.80 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 oP 3.30 3.40 3.50 oP1 3.10 3.20 3.30 Q 4.80 5 5.20 Q1 3.60 3.80 4 DocID026676 Rev 2 STGW30H60DFB, STGWT30H60DFB 5 Revision history Revision history Table 10. Document revision history Date Revision 01-Aug-2014 1 Initial release. 2 Modified: Table 2, Table 4 and 6 Modified: Figure 16 Updated: Section 3 Updated: Section 4.1: TO-247, STGW30H60DFB Minor text changes 17-Feb-2016 Changes DocID026676 Rev 2 17/18 STGW30H60DFB, STGWT30H60DFB IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. 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