This is information on a product in full production.
February 2016 DocID026676 Rev 2 1/18
18
STGW30H60DFB,
STGWT30H60DFB
Trench gate field-stop IGBT, HB series
600 V, 30 A high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•High speed switching series
•Minimized tail current
•V
CE(sat)
= 1.55 V (typ.) @ I
C
= 30 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Very fast soft recovery antiparallel diode
Applications
•Photovoltaic inverters
•High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These de vices are part of the new HB
series of IGBTs, which represent an optimum
compromise between conduction and switching
loss to maximize the ef ficiency of any frequency
converter. Furthermore, the slightly positive
V
CE(sat)
temperature coef ficient and very tight
pa rameter distribution result in sa fer p aralleling
operation.
TO-247
1
2
3
TO-3P
123
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order code Marking Package Packaging
STGW30H60DFB GW30H60DFB TO-247 Tube
STGWT30H60DFB GWT30H60DFB TO-3P Tube
www.st.com
Contents STGW30H60DFB, STGWT30H60DFB
2/18 DocID026676 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1 TO-247, STGW30H60DFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 T O-3P, STGWT30H60DFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID026676 Rev 2 3/18
STGW30H6 0DF B, STG WT3 0H60 DFB Electrical ratings
1 Electrical ratings
Tabl e 2. Absolute maxi mum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 60 A
I
C
Continuous collector current at T
C
= 100 °C 30 A
I
CP(1)
1. Pulse width limited by maximum junction temperature.
Pulsed collector current 120 A
I
F
Continuous forward current at T
C
= 25 °C 60 A
I
F
Continuous forward current at T
C
= 100 °C 30 A
I
FP(1)
Pulsed forward current 120 A
V
GE
Gate-emitter voltage ±2 0 V
P
TOT
Total dissipation at T
C
= 25 °C 260 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature range - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.58 °C/W
R
thJC
Thermal resistance junction-case diode 2.08 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGW30H60DFB, STGWT30H60DFB
4/18 DocID026676 Rev 2
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 600 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 30 A 1.55 2
V
V
GE
= 15 V, I
C
= 30 A
T
J
= 125 °C 1.65
V
GE
= 15 V, I
C
= 30 A
T
J
= 175 °C 1.75
V
F
Forward on-voltage
I
F
= 30 A 2 2.6
VI
F
= 30 A; T
J
= 125 °C 1.7
I
F
= 30 A; T
J
= 175 °C 1.6
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V ±250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input cap ac itance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-3659- pF
C
oes
Output capacitance - 101 - pF
C
res
Reverse transfer
capacitance -76-pF
Q
g
Total gate charge V
CC
= 520 V, I
C
= 30 A,
V
GE
= 15 V, see Figure 29
-149-nC
Q
ge
Gate-emitter charge - 25 - nC
Q
gc
Gate- collector charge - 62 - nC
DocID026676 Rev 2 5/18
STGW30H6 0DF B, STG WT3 0H60 DFB Electri cal chara ct er istics
Table 6. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 28
-37-ns
t
r
Current rise time - 14.6 - ns
(di/dt)
on
Turn-on current slope - 16 43 - A/µs
t
d(off)
Turn-off delay time 146 - ns
t
f
Current fall time - 23 - ns
E
on(1)
1. Including the reverse recovery of the diode.
Turn-on switching energy - 383 - µJ
E
off(2)
2. Including the tail of the collector current.
Tu rn-off switching energy - 293 - µJ
E
ts
Total switching energy - 676 - µJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 28
-35-ns
t
r
Current rise time - 16.1 - ns
(di/dt)
on
Turn-on current slope - 1496 - A/µs
t
d(off)
Tu rn-off delay time - 158 - ns
t
f
Current fall time - 65 - ns
E
on(1)
Turn-on switching energy - 794 - µJ
E
off(2)
Tu rn-off switching energy - 572 - µJ
E
ts
Total switching energy - 1366 - µJ
Table 7. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. U nit
t
rr
Reverse recovery time
I
F
= 30 A, V
R
= 400 V,
di/dt=1000 A/µs,
V
GE
= 15 V,
(see Figure 28)
-53-ns
Q
rr
Reverse recovery charge - 384 - nC
I
rrm
Reverse recovery current - 14.5 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 788 - A/µs
E
rr
Reverse recovery energy - 104 - µJ
t
rr
Reverse recovery time
I
F
= 30 A, V
R
= 400 V,
di/dt=1000 A/µs,
V
GE
= 15 V,
T
J
= 175 °C , (s ee Figure 28)
- 104 - ns
Q
rr
Reverse recovery charge - 1352 - nC
I
rrm
Reverse recovery current - 26 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 310 - A/µs
E
rr
Reverse recovery energy - 407 - µJ
Electrical characteristics STGW30H60DFB, STGWT30H60DFB
6/18 DocID026676 Rev 2
2.1 Electrical characteristics (curve)
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. case temperature
P
tot
150
100
0
050 T
C
(°C)
75
(W)
25 100 125 150
50
200
175
250
V
GE
≥ 15V, T
J
≤ 175 °C
GIPG280120141353FSR
I
C
60
40
20
0050 T
C
(°C)
75
(A)
25 100 125 150
V
GE
≥ 15V, T
J
≤ 175 °C
GIPG280120141346FSR
Figure 4. Output characteristics (T
J
= 25°C) Figure 5. Output characteristics (T
J
= 175°C)
I
C
60
40
20
0
02V
CE
(V)
4
(A)
13
80
100 11V
V
GE
=15 V
9V
13V
GIPG280120141156FSR
I
C
60
40
20
002V
CE
(V)
4
(A)
13
80
100 11V
V
GE
=15 V
9V
13V
7V
GIPG280120141206FSR
Figure 6. V
CE(sat)
vs. junction temperature Figure 7. V
CE(sat)
vs. collector current
V
CE(sat)
1.8
1.6
1.4
1.2
-50 0 T
J
(°C)
(V)
50 100 150
2.2
2.0
V
GE
= 15V
I
C
= 60A
I
C
= 30A
I
C
= 15A
GIPG280120141440FSR
V
CE(sat)
1.6
1.4
1.2
030 I
C
(A)
(V)
45 60
2.2
2.0
1.8
V
GE
= 15V
T
J
= 175°C
T
J
= 25°C
T
J
= -40°C
2.4
GIPG280120141446FSR
DocID026676 Rev 2 7/18
STGW30H6 0DF B, STG WT3 0H60 DFB Electri cal chara ct er istics
Figure 8. Collector current vs. switching
frequency Figure 9. Forward bias safe operating area
0
10
20
30
40
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R = 10
,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
50
60
GIPG280120141713FSR
I
C
100
10
1
0.11V
CE
(V)
(A)
10 100
10 µs
100 µs
1 ms
(single pulse T
C
= 25°C,
T
J
≤ 175°C; V
GE
=15V)
V
ce(sat)
limit
GIPG090720141330FSR
Figure 10. Transfer characteristics Figure 11. Diode V
F
vs. forward curren t
I
C
60
40
20
0711 V
GE
(V)
(A)
913
80
100 V
CE
=10 V
T
j
= 25 °C
T
j
= 175 °C
GIPG280120141330FSR
V
F
2
1.6
1.2
0.8
10 I
F
(A)
(V)
20
T
J
= 175°C
30 40 50
T
J
= 25°C
T
J
= -40°C
60
2.8
2.4
GIPG090720141349FSR
Figure 12. Normalized V
GE(th)
vs junction
temperature Fig ure 13. Normali ze d V
(BR)CES
vs. junction
temperature
V
GE(th)
(norm)
0.8
0.7
0.6
-50 T
J
(°C)
0 50 100 150
0.9
1.0
V
CE
= V
GE
I
C
= 1mA
AM16060v1
V
(BR)CES
(norm)
1.1
1.0
0.9
-50 T
J
(°C)
0 50 100 150
I
C
= 2mA
AM16059v2
Electrical characteristics STGW30H60DFB, STGWT30H60DFB
8/18 DocID026676 Rev 2
Figure 14. Capa citance variation Figure 15. Gate charge vs. gate-emitter voltage
C
10 V
CE
(V)
(pF)
0.1 1 10
C
ies
100
1000
C
oes
C
res
100
GIPG090720141358FSR
V
GE
(V)
4
2
00Q
g
(nC)
40 80 120 160
6
8
10
12
14
V
CC
= 520V, I
C
= 30A
I
G
= 1mA
16
GIPG280120141455FSR
Figure 16. Switching energy vs collector
current Figure 17. Switching energy vs gate resistance
E
0I
C
(A)
(µJ)
01020
400
30 40
800
E
ON
1200
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, T
J
= 175°C
50
E
OFF
1600
60
GIPG090720141414FSR
E
20 R
G
(Ω)
(µJ)
31017
220
420
620
24 31
820 E
OFF
V
CC
= 400 V, V
GE
= 15 V,
I
C
= 30 A, T
J
= 175 °C
E
ON
38
1020
1220
1420
GIPG090720141421FSR
Figure 18. Switching energy vs temperature Figure 19. Switching energy vs collector-
emitter voltage
E
0T
J
(°C)
(µJ)
20 60
200
400
600
100 140
E
OFF
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, I
C
= 30A
E
ON
800
GIPG090720141431FSR
E
0V
CE
(V)
(µJ)
150
400
800
1200
E
OFF
T
J
= 175°C, V
GE
= 15V,
R
G
= 10Ω, I
C
= 30A
1600
E
ON
250 350 450
GIPG090720141440FSR
DocID026676 Rev 2 9/18
STGW30H6 0DF B, STG WT3 0H60 DFB Electri cal chara ct er istics
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
t
IC(A)
(ns)
010 20
130
tf
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
tdoff
10
tr
tdon
40 50
100
GIPG100720141533FSR
t
10 R
G
(Ω)
(ns)
01020
100
30
t
f
T
J
= 175°C, V
GE
= 15V,
I
C
= 30A, V
CC
= 400V
40
t
don
t
doff
t
r
GIPG100720141549FSR
Figure 22. Reverse recovery current vs. diode
current slope Figure 23. Reverse recovery time vs. diode
current slope
Irm
0di/dt(A/µs)
(A)
0 500 1000
40
1500
IF = 30A, Vr = 400V
2000
60 =175°C
=25°C
20
TJ
TJ
2500
GIPG100720141607FSR
t
rr
0di/dt(A/µs)
(µs)
0 500 1000
100
1500
I
F
= 30A, V
r
= 400V
2000
150
=175°C
=25°C
200
50
T
J
T
J
GIPG110720140846FSR
Figure 24. Reverse recovery charge vs. diode
current slope Figure 25. Reverse recovery energy vs. diode
current slope
Q
rr
0di/dt(A/µs)
(nC)
0 500 1000
1500
1500
I
F
= 30A, V
r
= 400V
2000
2000 =175°C
=25°C
1000
T
J
T
J
500
GIPG110720140854FSR
E
rr
0di/dt(A/µs)
(µJ)
0 500 1000
600
1500
I
F
= 30A, V
r
= 400V
2000
1000
=175°C
=25°C
200
T
J
T
J
400
800
GIPG110720140859FSR
Electrical characteristics STGW30H60DFB, STGWT30H60DFB
10/18 DocID026676 Rev 2
Figure 26. Thermal impedance for IGBT
10
-5
10
-4
10
-3
10
-2
10
-1 t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
DocID026676 Rev 2 11/18
STGW30H6 0DF B, STG WT3 0H60 DFB Electri cal chara ct er istics
Figure 27. Thermal impedance for diode
Test circuits STGW30H60DFB, STGWT30H60DFB
12/18 DocID026676 Rev 2
3 Test circuits
Figure 28. Test circuit for inductive load
switching Figure 29. Gate charge test circuit
Figure 30. Switching waveform Figure 31. Diode reverse recovery waveform
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DocID026676 Rev 2 13/18
STGW30H60DFB, STGWT30H60DFB Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk .
4.1 TO-247, STGW30H60DFB
Figure 32. TO-247 package outline
B+
Package mechanical data STGW30H60DFB, STGWT30H60DFB
14/18 DocID026676 Rev 2
Table 8. TO-247 package mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID026676 Rev 2 15/18
STGW30H60DFB, STGWT30H60DFB Package mechanical data
4.2 TO-3P, STGWT30H60DFB
Figure 33. TO-3P drawin g
8045950_B
Package mechanical data STGW30H60DFB, STGWT30H60DFB
16/18 DocID026676 Rev 2
Table 9. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A 4.60 4.80 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
øP 3.30 3.40 3.50
øP1 3.10 3.20 3.30
Q 4.80 5 5.20
Q1 3.60 3.80 4
DocID026676 Rev 2 17/18
STGW30H6 0DFB, ST GWT 3 0H60 DFB Revision histo ry
5 Revision history
Table 10. Document revision history
Date Revision Changes
01-Aug-2014 1 Initial release.
17-Feb-2016 2
Modified: Table 2, Table 4 and 6
Modified: Figure 16
Updated: Section 3
Updated: Section 4.1: TO-247, STGW30H60DFB
Minor text chan ges
STGW30H60DFB, STGWT30H60DFB
18/18 DocID026676 Rev 2
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