MBR340 Vishay High Power Products Schottky Rectifier, 3 A FEATURES * Low profile, axial leaded outline * Very low forward voltage drop Cathode Anode * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability C-16 * Lead (Pb)-free plating * Designed and qualified for industrial level PRODUCT SUMMARY DESCRIPTION IF(AV) 3A VF at 3 A at 25 C 0.6 V IRM 20 mA at 125 C VR 40 V The MBR340 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform VRRM UNITS 3.0 A 40 V IFSM tp = 5 s sine 430 A VF 3 Apk, TJ = 25 C 0.6 V - 40 to 150 C MBR340 UNITS 40 V TJ VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 1 A, L = 12 mH 6.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 s Frequency limited by, TJ maximum VA = 1.5 x VR typical 1.0 A Document Number: 93449 Revision: 06-Nov-08 50 % duty cycle at TC = 92 C, rectangular waveform 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied For technical questions, contact: diodes-tech@vishay.com 3.0 430 A 80 www.vishay.com 1 MBR340 Vishay High Power Products Schottky Rectifier, 3 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1.0 A VFM (1) 0.85 1.0 A 0.37 TJ = 125 C 9.4 A V 0.49 0.72 TJ = 25 C IRM (1) 0.6 9.4 A 3.0 A Maximum reverse leakage current See fig. 2 UNITS 0.5 TJ = 25 C 3.0 A Maximum forward voltage drop See fig. 1 VALUES 0.6 TJ = 100 C VR = Rated VR 8 TJ = 125 C 20 mA Typical junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C 190 pF Typical series inductance LS Measured lead to lead 5 mm from package body 9.0 nH 10 000 V/s VALUES UNITS - 40 to 150 C 28 C/W 1.2 g Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to lead RthJL (2) TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device 0.042 Case style C-16 oz. MBR340 Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB, thermal probe connected to lead 2 mm from package www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93449 Revision: 06-Nov-08 MBR340 Schottky Rectifier, 3 A 1000 Junction Capacitance - C T (pF) 100 10 T = 25 C J 100 10 0 40 80 120 160 200 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 170 Allowable Lead Temperature (C) Instantaneous Forward Current - I F (A) Vishay High Power Products 1 Tj = 150 C Tj = 125 C Tj = 25 C 150 130 110 90 0 50 see note (1) 0.2 0.4 0.6 0.8 1 1.2 0 1.4 1 2 3 4 5 Average Forward Current - I F(AV) (A) Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Allowable Lead Temperature vs. Average Forward Current 100 Average Power Loss (Watts) 2.5 T J = 150 C 10 R (mA) Square wave (D = 0.50) 80% Rated Vr applied 70 30 0.1 Reverse Current - I DC 125 C 1 0.1 0.01 25C 0.001 0 10 20 30 40 Reverse Voltage - V R (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 2 1.5 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC DC RMS Limit 1 0.5 0 0 1 2 3 4 5 Average Forward Current - I F(AV) (A) Fig. 5 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Document Number: 93449 Revision: 06-Nov-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 MBR340 Schottky Rectifier, 3 A Non-Repetitive Surge Current - I FSM (A) Vishay High Power Products 1000 100 At Any Rated Load Condition And With rated Vrrm Applied Following Surge 10 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Non-Repetitive Surge Current ORDERING INFORMATION TABLE Device code MBR 3 40 TR 1 2 3 4 1 - Schottky MBR series 2 - Current rating: 3 = 3 A 3 - Voltage rating: 40 = 40 V 4 - TR = Tape and reel package (5000 pcs) None = Box package (500 pcs) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95242 Part marking information http://www.vishay.com/doc?95304 Packaging information http://www.vishay.com/doc?95309 www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93449 Revision: 06-Nov-08 Outline Dimensions Vishay Semiconductors Axial DO-201AD (C-16) DIMENSIONS in millimeters (inches) O 5.8 (0.23) MAX. Cathode band 21.0 (0.83) MIN. (2 places) 10.0 (0.39) MAX. 21.0 (0.83) MIN. (2 places) 10.0 (0.39) MAX. O 1.40 (0.055) O 1.20 (0.047) (2 places) 2.54 (0.100) MAX. Flash (2 places) O 1.40 (0.055) O 1.20 (0.047) (2 places) O 5.8 (0.23) MAX. Document Number: 95242 Revision: 20-Nov-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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