1N4148WS-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES * These diodes are also available in other case styles including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148-V 2 1 * Silicon epitaxial planar diode 1 = Cathode 2 = Anode * Fast switching diodes 22611 * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MARKING (example only) XY 22610 Bar = cathode marking XY = type code MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape) , 15K/box PARTS TABLE PART 1N4148WS-V ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS 1N4148WS-V-GS18 or 1N4148WS-V-GS08 A2 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE VR 75 VRRM 100 f 50 Hz IF(AV) 150 t < 1 s and Tj = 25 C IFSM 350 Ptot 200 Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge forward current Power dissipation (1) UNIT V mA mW Note (1) Valid provided that electrodes are kept at ambient temperature. Rev. 1.9, 23-Mar-12 Document Number: 85751 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS-V www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) SYMBOL VALUE UNIT RthJA 650 K/W Junction temperature Tj 150 Operating temperature range Tj - 55 to + 150 Tstg - 65 to + 150 Storage temperature range C Note (1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Forward voltage Leakage current Diode capacitance TEST CONDITION SYMBOL IF = 10 mA VF MIN. TYP. MAX. 1000 IF = 100 mA VF 1200 VR = 20 V IR 25 VR = 75 V IR 5 UNIT mV nA VR = 100 V IR 100 VR = 20 V, Tj = 150 C IR 50 A VF = VR = 0 V CD 4 pF Tested with 50 mA pulses, tp = 0.1 s, rise time < 30 ns, fp = (5 to 100) kHz Vfr 2.5 V Reverse recovery time IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr 4 ns Rectification efficiency f = 100 MHz, VRF = 2 V Voltage rise when switching ON 0.45 RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT 60 2 nF VRF = 2 V 5 k VO 17436 Rev. 1.9, 23-Mar-12 Document Number: 85751 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS-V www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 103 Tj = 25 C 1.1 f = 1 MHz 102 Tj = 100 C Tj = 25 C CD (VR) IF (mA) 10 CD (0 V) 1.0 1 0.9 0.8 10-1 0.7 10-2 1 0 0 2 VF (V) 17437 4 6 8 10 Fig. 4 - Relative Capacitance vs. Reverse Voltage Fig. 1 - Forward Characteristics 104 104 5 2 Tj = 25 C 5 f = 1 kHz 2 103 103 5 IR (nA) 5 Rf () 2 VR (V) 17440 2 102 5 2 102 5 2 2 10 10 5 VR = 20 V 5 2 2 1 10-2 10-1 1 10 102 IF (mA) 17438 Fig. 2 - Dynamic Forward Resistance vs. Forward Current 0 17441 100 200 Tj (C) Fig. 5 - Leakage Current vs. Junction Temperature Ptot - Power Dissipation (mW) 250 200 150 100 50 0 0 20324 50 100 150 200 Tamb - Ambient Temperature (C) Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature Rev. 1.9, 23-Mar-12 Document Number: 85751 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS-V www.vishay.com Vishay Semiconductors 100 5 4 3 2 I IFRM (A) 1 T = 1/fP IFRM 10 5 4 3 2 n = tP/T tP n=0 t T 0.1 0.2 0.5 5 4 3 2 0.1 10-5 2 5 10-4 2 5 10-3 2 17442 5 2 10-2 5 10-1 2 5 1 2 5 10 tP (s) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration 0.1 (0.004) max. 0 to 8 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 Rev. 1.9, 23-Mar-12 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) Document Number: 85751 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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