DATA SH EET
Product specification
Supersedes data of 1999 Apr 26 2002 Nov 07
DISCRETE SEMICONDUCTORS
1PS88SB48
Schottky barrier diodes
b
ook, halfpage
MBD128
2002 Nov 07 2
Philips Semiconductors Product specification
Schottky barrier diodes 1PS88SB48
FEATURES
•Ultra fast switching speed
•Low forward voltage
•Small SMD package
•Guard ring protected
•Low capacitance.
APPLICATIONS
•High speed switching
•Circuit protection
•Voltage clamping.
DESCRIPTION
The 1PS88SB48 consists of two dual Schottky barrier
diodes with common cathodes, fabricated in planar
technology and encapsulated in the small SOT363 SMD
plastic package.
PINNING
PIN DESCRIPTION
1 anode (a1)
2 anode (a2)
3 common cathode (k1)
4 anode (a3)
5 anode (a4)
6 common cathode (k2)
handbook, halfpage
654
123
MBL733
123
654
Top view
Fig.1 Simplified outline (SOT363; SC-88) and
symbol.
Marking code: 8t5.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage −40 V
IFcontinuous forward current −120 mA
IFRM repetitive peak forward current tp≤1s;δ≤0.5 −120 mA
IFSM non-repetitive peak forward current tp<10ms −200 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2002 Nov 07 3
Philips Semiconductors Product specification
Schottky barrier diodes 1PS88SB48
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT363 (SC-88) standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFcontinuous forward voltage see Fig.2
IF= 1 mA 380 mV
IF= 10 mA 500 mV
IF=40mA 1 V
I
Rcontinuous reverse current VR= 30 V; note 1; see Fig.3 1 µA
VR= 40 V; note 1; see Fig.3 10 µA
Cddiode capacitance VR= 0; f = 1 MHz; see Fig.5 5 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
2002 Nov 07 4
Philips Semiconductors Product specification
Schottky barrier diodes 1PS88SB48
GRAPHICAL DATA
Fig.2 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
2
10
−1
10
−2
10
1
0
MLC361
0.6 0.80.40.2 1
VF (V)
IF
(mA)
(1) (2) (3) (4)
(1) Tamb = 150 °C.
(2) Tamb =85°C. (3) Tamb =25°C.
(4) Tamb =−40 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
(1) Tamb = 150 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
handbook, halfpage
10
3
10
2
10
−1
10
−2
10
1
0
MLC362
2010 4030 VR (V)
IR
(µA)
(1)
(2)
(3)
Fig.4 Differential forward resistance as a function
of forward current; typical values.
f = 10 KHz.
handbook, halfpage
MLC364
11010
2
1
10
3
10
10
2
10
1
rdiff
(Ω)
I (mA)
F
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
handbook, halfpage
01020 4030
5
0
4
MLC363
3
2
1
VR (V)
Cd
(pF)
2002 Nov 07 5
Philips Semiconductors Product specification
Schottky barrier diodes 1PS88SB48
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wBM
b
p
D
e
1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe
1H
E
L
p
Qywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
2002 Nov 07 6
Philips Semiconductors Product specification
Schottky barrier diodes 1PS88SB48
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2002 Nov 07 7
Philips Semiconductors Product specification
Schottky barrier diodes 1PS88SB48
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
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Printed in The Netherlands 613514/03/pp8 Date of release: 2002 Nov 07 Document order number: 9397 750 10283
