PMG45UN
20 V, single N-channel Trench MOSFET
13 November 2012 Product data sheet
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1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT363 (SC-88) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
•Low threshold voltage
•Very fast switching
•Trench MOSFET technology
1.3 Applications
•Relay driver
•High-speed line driver
•Low-side loadswitch
•Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 20 V
VGS gate-source voltage
Tj = 25 °C
-8 - 8 V
IDdrain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 3.3 A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 45 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 2 / 13
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
1 32
456
TSSOP6 (SOT363)
S
D
G
017aaa253
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMG45UN TSSOP6 plastic surface-mounted package; 6 leads SOT363
4. Marking
Table 4. Marking codes
Type number Marking code
[1]
PMG45UN U5%
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 20 V
VGS gate-source voltage
Tj = 25 °C
-8 8 V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 3.3 A
VGS = 4.5 V; Tamb = 25 °C [1] - 3 A
IDdrain current
VGS = 4.5 V; Tamb = 100 °C [1] - 1.9 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 12 A
[2] - 375 mWPtot total power dissipation Tamb = 25 °C
[1] - 715 mW
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 3 / 13
Symbol Parameter Conditions Min Max Unit
Tsp = 25 °C - 4350 mW
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb = 25 °C [1] - 0.8 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Tj(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
Pder
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Tj(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
Ider
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 4 / 13
017aaa851
1
10-1
10
102
ID
(A)
10-2
VDS (V)
10-1 103
102
1
Limit RDSon = VDS/ID
tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 ms
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 289 332 K/W
[2] - 152 175 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air
[3] - 117 145 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- 25 29 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 5 / 13
017aaa852
10
1
102
103
Zth(j-a)
(K/W)
10-1
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa853
10
1
102
103
Zth(j-a)
(K/W)
10-1
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
duty cycle = 1
0.75 0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V
VGSth gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.7 1 V
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA
IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nA
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA
VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 45 55 mΩ
VGS = 4.5 V; ID = 3 A; Tj = 150 °C - 66 81 mΩ
VGS = 2.5 V; ID = 2.5 A; Tj = 25 °C - 58 76 mΩ
RDSon drain-source on-state
resistance
VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C - 85 125 mΩ
gfs forward
transconductance
VDS = 10 V; ID = 3 A; Tj = 25 °C - 11.2 - S
Dynamic characteristics
QG(tot) total gate charge - 2.2 3.3 nC
QGS gate-source charge - 0.32 - nC
QGD gate-drain charge
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
- 0.56 - nC
Ciss input capacitance - 184 - pF
Coss output capacitance - 51 - pF
Crss reverse transfer
capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
- 29 - pF
td(on) turn-on delay time - 8 - ns
trrise time - 30 - ns
td(off) turn-off delay time - 30 - ns
tffall time
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
- 26 - ns
Source-drain diode
VSD source-drain voltage IS = 0.8 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V
VDS (V)
0 431 2
017aaa854
4
8
12
ID
(A)
0
4.5 V 2.5 V
2.2 V
VGS = 1.5 V
2 V
1.8 V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa855
10-4
10-5
10-3
ID
(A)
10-6
VGS (V)
0 1.251.000.50 0.750.25
min typ max
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 7 / 13
017aaa856
ID (A)
0 1284
80
120
40
160
200
RDSon
(mΩ)
0
1.6 V
1.7 V
1.8 V
1.9 V
2 V
VGS = 4.5 V
2.2 V
2.5 V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
VGS (V)
0 1084 62
017aaa857
80
120
40
160
200
RDSon
(mΩ)
0
Tj= 150 °C
Tj= 25 °C
ID = 3 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
VGS (V)
0 321
017aaa858
4
8
12
ID
(A)
0
Tj= 150 °C Tj= 25 °C
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Tj (°C)
-60 1801200 60
017aaa859
0.9
1.2
1.5
a
0.6
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 8 / 13
Tj (°C)
-60 1801200 60
017aaa860
0.4
0.8
1.2
VGS(th)
(V)
0
max
typ
min
ID = 0.25 mA; VDS = VGS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
VDS (V)
10-1 102
101
017aaa861
102
10
103
C
(pF)
1
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
QG (nC)
0 2.52.01.0 1.50.5
017aaa862
2
3
1
4
5
VGS
(V)
0
ID = 3 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 15. Gate charge waveform definitions
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 9 / 13
VSD (V)
0 1.00.80.4 0.60.2
017aaa863
1.6
0.8
2.4
3.2
IS
(A)
0
Tj= 150 °C Tj= 25 °C
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig. 17. Duty cycle definition
9. Package outline
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
1 32
46 5
Fig. 18. Package outline TSSOP6 (SOT363)
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 10 / 13
10. Soldering
Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363)
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
Fig. 20. Wave soldering footprint for TSSOP6 (SOT363)
11. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMG45UN v.1 20121113 Product data sheet - -
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 11 / 13
12. Legal information
12.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
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the accuracy or completeness of information included herein and shall have
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Draft — The document is a draft version only. The content is still under
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modifications or additions. NXP Semiconductors does not give any
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information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
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Quick reference data — The Quick reference data is an extract of the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Characteristics sections of this document is not warranted. Constant or
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NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 12 / 13
grant, conveyance or implication of any license under any copyrights, patents
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In the event that customer uses the product for design-in and use in
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 13 November 2012 13 / 13
13. Contents
1 Product profile ....................................................... 1
1.1 General description .............................................. 1
1.2 Features and benefits ...........................................1
1.3 Applications .......................................................... 1
1.4 Quick reference data ............................................ 1
2 Pinning information ............................................... 2
3 Ordering information .............................................2
4 Marking ................................................................... 2
5 Limiting values .......................................................2
6 Thermal characteristics .........................................4
7 Characteristics .......................................................5
8 Test information ..................................................... 9
9 Package outline ..................................................... 9
10 Soldering .............................................................. 10
11 Revision history ................................................... 10
12 Legal information .................................................11
12.1 Data sheet status ............................................... 11
12.2 Definitions ...........................................................11
12.3 Disclaimers .........................................................11
12.4 Trademarks ........................................................ 12
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 November 2012
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