PAGE . 1
STAD-MAR.24.2008
MMBTA42
NPN HIGH VOLTAGE TRANSISTOR
VOLTAGE 300 V olts 225 mWatts
FEATURES
• NPN silicon, planar design
• Collector-emitter voltage VCE = 300V
• Collector current IC = 500mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DA T A
• Case: SOT -23, Plastic
• Termin als: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking: A42
POWER
ABSOLUTE MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
1
Base
3
Collector
2
Emitter
1
BASE
3
COLLECTOR
2
EMITTER
Top View
RETEMARAPlobmySeulaVstinU
egatloVrettimE-rotcelloC V
OEC
003V
egatloVesaB-rotcelloC V
OBC
003V
egatloVesaB-rettimE V
OBE
0.6V
suounitnoCtnerruCrotcelloC I
C
005Am
RETEMARAPlobmySeulaVstinU
)1etoN(noitapissiDrewoPxaM P
TOT
522Wm
tneibmAotnoitcnuJ,ecnatsiseRlamrehT R
θAJ
655
O
W/C
erutarepmeTnoitcnuJ T
J
051ot55-
O
C
erutarepmeTegarotS T
GTS
051ot55-
O
C