RFG60P05E S E M I C O N D U C T O R 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package * 60A, 50V JEDEC STYLE TO-247 * rDS(ON) = 0.030 SOURCE DRAIN GATE * Temperature Compensating PSPICE Model * 2kV ESD Rated * Peak Current vs Pulse Width Curve * UIS Rating Curve * +175oC Operating Temperature Description DRAIN (BOTTOM SIDE METAL) The RFG60P05E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Symbol PACKAGE AVAILABILITY PART NUMBER RFG60P05E G PACKAGE TO-247 D BRAND RFG60P05E S NOTE: When ordering use the entire part number. Formerly developmental type TA09835. Absolute Maximum Ratings TC = +25oC RFG60P05E UNITS Drain Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -50 V Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -50 V Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS 20 V Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 60 Refer to Peak Current Curve A Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve Electrostatic Discharge Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD MIL-STD-883, Category B(2) 2 KV Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215 1.43 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to +175 oC Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1995 4-57 File Number 2745.4 Specifications RFG60P05E Electrical Specifications TC = +25oC, Unless Otherwise Specified PARAMETER SYMBOL Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(TH) Zero Gate Voltage Drain Current Gate-Source Leakage Current MIN TYP MAX UNITS ID = 250A, VGS = 0V -50 - - V VGS = VDS, ID = 250A -2 - -4 V TC = +25oC - - -1 A TC = +150oC - - -50 A VGS = 20V - - 100 nA ID = 60A, VGS = -10V - - 0.030 VDD = -25V, ID = 30A RL = 0.83, VGS = -10V RGS = 2.5 - - 125 ns - 20 - ns tR - 60 - ns tD(OFF) - 65 - ns tF - 20 - ns tOFF - - 125 ns - 450 nC - 225 nC 15 nC IDSS IGSS On Resistance rDS(ON) Turn-On Time tON Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tD(ON) TEST CONDITIONS VDS = -50V, VGS = 0V Total Gate Charge QG(TOT) VGS = 0 to -20V VDD = -40V, ID = 60A, RL = 0.67 Gate Charge at -10V QG(-10) VGS = 0 to -10V Threshold Gate Charge QG(TH) VGS = 0 to -2V - VDS = -25V, VGS = 0V f = 1MHz - 7200 - pF Input Capacitance CISS Output Capacitance COSS - 1700 - pF Reverse Transfer Capacitance CRSS - 325 - pF Thermal Resistance Junction to Case RJC - - 0.70 oC/W Thermal Resistance Junction to Ambient RJA - - 80 oC/W Source-Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage VSD ISD = -60A - - -1.75 V Reverse Recovery Time tRR ISD = -60A, dISD/dt = -100A/s - - 200 ns 4-58 RFG60P05E Typical Performance Curves TC = +25oC 2 -500 -100 ZJC , NORMALIZED THERMAL RESPONSE ID , DRAIN CURRENT (A) 1 100s 1ms -10 10ms 100ms DC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) -1 -1 0.2 0.05 t1 t2 0.02 0.01 VDSS MAX = -50V -10 VDS , DRAIN-TO-SOURCE VOLTAGE (V) PDM 0.1 0.1 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 -100 FIGURE 1. SAFE OPERATING AREA CURVE 10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION (s) TC = +25oC IDM , PEAK CURRENT CAPABILITY (A) -500 -60 -50 -40 -30 -20 VGS = -10V FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: I = I 175 - T C ------------------150 25 -100 -10 0 25 50 75 100 125 150 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION -50 10-5 175 10-4 TC , CASE TEMPERATURE (oC) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 VGS = -7V -120 VGS = -10V VGS = -6V -80 -40 0 0.0 VGS = -4.5V -2 -4 VGS = -5V -6 VDD = -15V ID(ON) , ON-STATE DRAIN CURRENT (A) VGS = -8V VGS = -20V 101 FIGURE 4. PEAK CURRENT CAPABILITY PULSE DURATION = 250s, TC = +25oC -160 ID , DRAIN CURRENT (A) 101 FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -70 ID , DRAIN CURRENT (A) 0.5 -8 -160 o -55 C -120 PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX +175oC +25oC -80 -40 0 0.0 -2.0 -4.0 -6.0 -8.0 VGS , GATE-TO-SOURCE VOLTAGE (V) VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 4-59 -10.0 RFG60P05E Typical Performance Curves (Continued) VGS = VDS, ID = -250A PULSE DURATION = 250s, VGS = -10V, ID = -60A 2.0 VGS(TH) , NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1.0 0.5 0.0 -80 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 -40 200 80 120 160 200 TJ , JUNCTION TEMPERATURE ( C) FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE ID = -250A 1.2 2.0 POWER DISSIPATION MULTIPLIER BVDSS , NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 40 o TJ , JUNCTION TEMPERATURE (oC) 1.5 1.0 0.5 0.0 -80 1.0 0.8 0.6 0.4 0.2 0.0 -40 0 40 80 120 160 200 0 TJ, JUNCTION TEMPERATURE (oC) 25 50 75 100 125 175 FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE -10.0 -50.0 VGS = 0V, f = 1MHz VDS , DRAIN-SOURCE VOLTAGE (V) 8000 CISS 6000 4000 COSS 2000 CRSS -37.5 VDD = BVDSS VDD = BVDSS RL = 0.83 IG(REF) = -4mA VGS = -10V -25.0 0.75 BVDSS -12.5 -5 -10 -15 -20 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE -2.5 0.0 I G ( REF ) 20 --------------------------I G ( ACT ) -25 -7.5 -5.0 0 0 0 150 TC , CASE TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE C, CAPACITANCE (pF) 0 t, TIME (s) I G ( REF ) 80 --------------------------I G ( ACT ) FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTE AN7254 AND AN7260 4-60 VGS , GATE-SOURCE VOLTAGE (V) rDS(ON) , NORMALIZED ON RESISTANCE 2.0 RFG60P05E Typical Performance Curves (Continued) IAS , AVALANCHE CURRENT (A) -200 STARTING TJ = +25oC -100 STARTING TJ = +150oC If R = 0 tAV = (L) (IAS) / (1.3RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] -10 0.01 0.1 1 tAV , TIME IN AVALANCHE (ms) 10 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms VDS BVDSS tP VDS L IAS VARY tP TO OBTAIN RG REQUIRED PEAK IAS VDD VDD + 0V DUT tP IL 0.01 -VGS tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF tD(OFF) tD(ON) RL tR tF 10% 10% VDS VDS 0V 90% 90% VGS -VGS RGS 10% DUT 50% 50% PULSE WIDTH 90% FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 4-61 RFG60P05E Temperature Compensated PSPICE Model for the RFG60P05E .SUBCKT RFG60P05E 2 1 3; REV 9/20/94 CA 12 8 1.01e-8 CB 15 14 1.05e-8 CIN 6 8 6.9e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD IT 8 17 1 - DRAIN 2 5 + LDRAIN EBREAK DPLCAP 16 VTO GATE 1 LGATE RGATE 9 20 18 8 21 MOS1 6 S1A LSOURCE RSOURCE 14 13 13 CA 15 17 RBREAK S2B 18 RVTO CB + 6 EGS - 8 3 SOURCE 7 S2A 13 8 S1B 11 DBREAK CIN 8 12 DBODY MOS2 - RIN MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 + 17 18 - + - EVTO LDRAIN 2 5 1e-9 LGATE 1 9 7.9e-9 LSOURCE 3 7 4.18e-9 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 12.83e-3 RGATE 9 20 1.5 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.25e-3 RVTO 18 19 RVTOMOD 1 8 6 RDRAIN + EBREAK 5 11 17 18 -76.35 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 ESG 10 + EDS - IT 14 5 8 19 VBAT + S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.83 .MODEL DBDMOD D (IS = 1.24e-12 RS = 4.72e-3 TRS1 = 1.43e-3 TRS2 = -4.91e-7 CJO = 6.98e-9 TT = 1.5e-7) .MODEL DBKMOD D (RS = 1.11e-1 TRS1 = 1.34e-3 TRS2 = 4.46e-12) .MODEL DPLCAPMOD D (CJO = 15e-10 IS = 1e-30 N = 10) .MODEL MOSMOD PMOS (VTO = -3.71 KP = 31.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 9.42e-4 TC2 = 0) .MODEL RDSMOD RES (TC1 = 5.85e-3 TC2 = 7.69e-6) .MODEL RVTOMOD RES (TC1 = -3.39e-3 TC2 = 1.07e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.6 VOFF = 2.6) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.6 VOFF = 4.6) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.16 VOFF = -3.84) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.84 VOFF = 1.16) .ENDS For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. 4-62