DS30275 Rev. 4 - 2 1 of 3 BC857AT, BT, CT
www.diodes.com ã Diodes Incorporated
BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-100 mA
Power Dissipation (Note 1) Pd150 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 833 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
Type Marking
BC857AT 3V
BC857BT 3W
BC857CT 3G
Maximum Ratings @ TA = 25°C unless otherwise specified
Features
·Epitaxial Die Construction
·Complementary NPN Types Available
(BC847AT, BT, CT)
·Ultra-Small Surface Mount Package
·Also Available in Lead Free Version
Mechanical Data
·Case: SOT-523, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 2
·Terminal Connections: See Diagram
·Weight: 0.002 grams (approx.)
·Marking Codes (See Table Below & Diagrams
on Page 2)
·Ordering & Date Code Information: See Page 2
TCUDORPWEN
SOT-523
Dim Min Max Typ
A0.15 0.30 0.22
B0.75 0.85 0.80
C1.45 1.75 1.60
D¾¾0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
J0.00 0.10 0.05
K0.60 0.80 0.75
L0.10 0.30 0.22
M0.10 0.20 0.12
N0.45 0.65 0.50
a0°8°¾
All Dimensions in mm
A
M
JL
D
BC
H
K
G
TOP VIEW
C
E
B
SPICE MODEL: BC847AT BC857BT BC857CT
DS30275 Rev. 4 - 2 2 of 3 BC857AT, BT, CT
www.diodes.com
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 2) V(BR)CBO -50 — — V IC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO -45 — — V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 2) V(BR)EBO -5 — — V IE = 1mA, IC = 0
DC Current Gain (Note 2) Current Gain A
B
C
hFE
125
220
420
—
290
520
250
475
800
—VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) ——
—
-300
-650 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 2) VBE(SAT) —
—
-700
-900
—
—mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage (Note 2) VBE(ON) -600
—
—
—
-750
-820 mV VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Collector-Cutoff Current (Note 2) ICBO
—
—
—
—
-15
-4.0
NA
µA
VCB = -30V
VCB = -30V, TA = 150°C
Gain Bandwidth Product fT100 — — MHz VCE = -5.0V, IC = -10mA,
f = 100MHz
Output Capacitance COB — — 4.5 pF VCB = -10V, f = 1.0MHz
Noise Figure NF — — 10 dB
IC = -0.2mA, VCE = -5.0Vdc,
RS = 2.0KW, f = 1.0KHz,
BW = 200Hz
Notes: 2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: BC857CT-7-F.
@ TA = 25°C unless otherwise specified
TCUDORPWEN
Ordering Information (Note 3)
Device Packaging Shipping
BC857AT-7 SOT-523 3000/Tape & Reel
BC857BT-7 SOT-523 3000/Tape & Reel
BC857CT-7 SOT-523 3000/Tape & Reel
XXYM
Marking Information
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
DS30275 Rev. 4 - 2 3 of 3 BC857AT, BT, CT
www.diodes.com
1
0.1 10 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0
.5
IC
IB
=10
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
2
5
0
0
10
100
1000
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
t
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 4, Gain Bandwidth Product vs Collector Current
V= 5V
CE
1
10
100
1000
110 100 1000
V = 5V
CE
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 3, DC Current Gain vs. Collector Current
T= 25°C
A
T = -50°C
A
T = 150°C
A
TCUDORPWEN
