SEP8505 GaAs Infrared Emitting Diode FEATURES * T-1 package * 15 (nominal) beam angle * 935 nm wavelength * Consistent on-axis optical properties * Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington INFRA-55.TIF DESCRIPTION The SEP8505 is a gallium arsenide infrared emitting diode transfer molded in a T-1 red plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals 0.005(0.12) 2 plc decimals 0.020(0.51) .200 (5.08) .180 (4.57) .03 (.76) .020 SQ. LEAD TYP .05(1.27) CATHODE (.51) .050 (1.27) ANODE .125 (3.18) .115 (2.92) DIA. .250 (6.35) MAX. .500 MIN. (12.7) .155 DIA. (3.94) DIM_101.ds4 36 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8505 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) 50 mA 70 mW [A] -40C to 85C -40C to 85C 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.18 mW/C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 37 SEP8505 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 gra_027.ds4 Normalized radiant intensity Relative intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 Radiant Intensity vs Forward Current 5.0 TA = 25 C 2.0 1.0 0.5 0.2 0.1 10 +10 +20 +30 +40 Fig. 4 Forward Voltage vs Forward Current gra_003.ds4 1.40 Forward voltage - V Forward voltage - V 1.30 1.25 1.20 1.15 1.10 100 Forward Voltage vs Temperature gra_207.ds4 1.35 1.30 1.25 1.20 1.15 IF = 20 mA 1.10 1.00 0 20 40 60 -40 Forward current - mA Fig. 6 Spectral Bandwidth 10 35 60 85 Coupling Characteristics with SDP8405 gra_029.ds4 10 7 Light current - mA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 -15 Temperature - C gra_005.ds4 Relative intensity 40 50 1.05 1.05 890 910 930 950 970 990 1010 VCE = 5 V IF = 25 mA TA = 25 C 4 2 1 0.7 0.4 0.2 0.1 0.01 Wavelength - nm 38 30 1.40 1.35 Fig. 5 20 Forward current - mA Angular displacement - degrees Fig. 3 gra_028.ds4 10.0 0.02 0.04 0.1 0.2 0.4 0.7 1 Lens-to-lens separation - inches h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8505 GaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature gra_130.ds4 Relative power output 10 5.0 IF = 40 mA IF = 30 mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50 +75 +100 TA - Free-air temperature - (C) All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 39