GaAs Infrared Emitting Diode
SEP8505
DESCRIPTION
FEATURES
T-1 package
•
15¡ (nominal) beam angle
•
935 nm wavelength
•
Consistent on-axis optical properties
•
Mechanically and spectrally matched to
SDP8405 phototransistor and SDP8105
photodarlington
•
The SEP8505 is a gallium arsenide infrared emitting
diode transfer molded in a T-1 red plastic package.
Transfer molding of this device assures superior optical
centerline performance compared to other molding
processes. Lead lengths are staggered to provide a
simple method of polarity identification.
(.51)
.020 SQ. LEAD
TYP
.050
(1.27)
DIA.
(3.94)
.155
ANODE
CATHODE
DIA.
.125 (3.18)
.115 (2.92)
MIN.
(12.7)
.500
.03(.76)
.180 (4.57)
.200 (5.08)
MAX.
(6.35)
.250
.05(1.27)
DIM_101.ds4
INFRA-55.TIF
OUTLINE DIMENSIONS
in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
36
GaAs Infrared Emitting Diode
SEP8505
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
50 mA
Power Dissipation
70 mW [À]
Operating Temperature Range
-40¡C to 85¡C
Storage Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.18 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
37
GaAs Infrared Emitting Diode
SEP8505
Radiant Intensity vs
Angular Displacement
gra_027.ds4
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vs
Forward Current
gra_028.ds4
Forward current - mA
Normalized radiant intensity
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
TA = 25 °C
Fig. 2
Forward Voltage vs
Forward Current
gra_003.ds4
Forward current - mA
Forward voltage - V
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
0 20 40 60
Fig. 3 Forward Voltage vs
Temperature
gra_207.ds4
Temperature - °C
Forward voltage - V
1.00
1.05
1.15
1.20
1.30
1.35
1.40
-40 -15 10 35 60 85
IF = 20 mA
1.25
1.10
Fig. 4
Spectral Bandwidth
gra_005.ds4
Wavelength - nm
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 5 Coupling Characteristics
with SDP8405
gra_029.ds4
Lens-to-lens separation - inches
Light current - mA
0.1
0.2
0.4
1
2
4
10
0.01 0.2 0.4 0.7 1 0.02 0.04 0.1
0.7
7
VCE = 5 V
IF = 25 mA
TA = 25 °C
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
38
GaAs Infrared Emitting Diode
SEP8505
Relative Power Output vs
Free Air Temperature
gra_130.ds4
T
A - Free-air temperature - (°C)
Relative power output
0.1
1.0
10
-50 -25 0+25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mA
IF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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