BD241, BD241A, BD241B, BD241C 1271 FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD242A-C @ 40 Wat 25 C Case Temperature e 3A Rated Collector Current @ Min fy of 3 MHz at 10 V, 500 mA mechanical data 1 { Ss c= < g ry a =~ 6,0} 2 @ 0.05 thick 2 13 = ---165 +07 --- -05 10 +05 be 12.9-_o- see 0.05 = mae 12 - 0,05 - 7 . 04 max 0,1 - tt ~-__- = a 69% +00l- 1 -O1 Ail dimensions are in mm TO-66P absolute maximum ratings at 25 C case temperature (unless otherwise noted) BD241 Collector-Emitter Voltage (Rgg = 100 2) 55V Collector-Emitter Voltage (See Note 1) 45V Emitter-Base Voltage - Continuous Collector Current < Peak Collector Current (See Note 2) < Continuous Base Current Soe ee ee ee < Safe Operating Region at (or below) 25 C Case Temperature . << Continuous Device Dissipation at (or below) 25 C Case Temperature (See Note 3) . - Continuous Device Dissipation at (or below) 25 C Free-Air Temperature (See Note 4) . soe ee < Unclamped Inductive Load Energy (See Note 5) - Operating Collector Junction Temperature Range. . . . . 1. 2. Storage Temperature Range - < Lead Temperature 1/8 Inch from Case for 5 Seconds . NOTES: 1. This value applies when the base-emitter diode is open-circuited. 2. This value applies for ty, 0.3 ms, duty cycle S10 %. 3. Derate linearly to 150 C case temperature at the rate of 0.32 W/C. 4. Derate linearly to 150 C free-air temperature at the rate of 16 mW/C. 5. BD241A 8D241B BD241C 70V 90 V 115 V 60 V 80 V 100 V 5V > 3A > 5A > 1A > See Figure 5 > 40 W > 2W > 32 mJ > 65 C to 150 C > 65 C to 150 C > 250 C > This rating is based on the capability of the transistor to operate safely in the circuit of Figure 2. L = 20 mH, Regi = 100 Q, Vea2 = OV, Rg = 0.192. Veg = 10 V. Energy * 12/2. PRELIMINARY DATA SHEET: Supplementary data may be published at a later date. TEXAS INSTRUMENTS 2-31BD241, BD241A, BD241B, BD241C electrical characteristics at 25 C case temperature BD241 BO241A BD2416 Bb241c PARAMETE 1 RAMETER TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNIT ViBRICEO I = 30 ma, tg =0, 45 60 80 100 v See Note 6 IcEO VcgE=30V. Ig =0 0.3 0.3 A VceE = 60V, Ip =0 0.3 o3 =6 \cES Voce =45V. Vee =0 0.2 VcE = 60 V, Ve =0 0.2 A VcE =80V, VBE =0 0.2 m Voce = 100 V, Vee =9 0.2 'EBO Veg=5V, Ic =0 1 1 1 1 mA hE VcE =4V. Ig =1A, 25 25 25 25 See Notes 6 and 7 Veg =4V, I=3A, 10 10 10 10 See Notes 6 and 7 Vee Voce =4V. Iq =3A, 1.8 1.8 18 18 v See Notes 6 and 7 - Vcelsat) ig = 600 mA, Ic =3A, 1.2 1.2 1.2 1.2 Vv See Notes 6 and 7 hte Vce = 10V, Ig = 0.54, 20 20 20 20 f= 1 kHz Ingel Voce = 10V, Ic = 0.54 3 3 3 3 f= 1 MHz NOTES: 6. These parameters must be measured using pulse techniques. ty, = 300 Ms, duty cycle 2%. 7. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal characteristics PARAMETER MAX UNIT Rsc Junction-to-Case Thermal Resistance 3.125 ocjw RGJA Junetion-to-Free-Air Thermal Resistance 62.5 switching characteristics at 25 C case temperature PARAMETER TEST CONDITIONS + TYP UNIT ton IG=iA, (g(4) = 100mA, Ia(2) = 100 mA, 03 us Toft VBEloff) =-3.7V, Ry = 200, See Figure 1 1 + Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2-32 TEXAS INSTRUMENTSBD241, BD241A, BD241B, BD241C en o16V ~~~ OUTPUT 90" 202 ctv a 10% ' INPUT INPUT B22 Oo L ia 1 | 822 f teze T ston pe nel tot == q = sav | = 20,34 o ey i = 20, OUTPUT oO ' a 7 90% 4. 4-4 TEST CIRCUIT VOLTAGE WAVEFORMS Vcg Monitor tw eams i 1 (see Note 8) Input cog Collector Current 0 + ! Vv 1 ! = Ig Monitor (BRICER ~I- ~| Collector i Voltage } 1 TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS max. safe operating area 25C A OC -Operation tp =300us; d= 10% pitp= ims; d=l0%, 1 tp =10ms; d= 10% Prot Q. 8D 241 BD 241A BO 2418 BD 241C gor 0 25 50 75 100 125 C 150 1 5 10 50 wo Vv TEXAS INSTRUMENTS 2-33BD241, BD241A, BD241B, BD241C Voer=! (Rag): Ie = 30 mA fic: +25C Dee #4 Cle), 200 120/gp241 v 10 ) 100 hye 100 CER 90 ' | 80 Tos 25C 50 = B0C 20 60 50 20 40 001 Ol 1 A3 Rae > \ __ VCE (sat) = f (Jp) Vee =f (Ic); Vor 24; Te ++25C 10 or v ~ v o 4 a | 99 [= / VCE (sat) 1 Vee J 0.8 4 07 L 0) y a " i a 06 001 05 Ql \ 10 100 mA 1000 0,01 0, 1 AB 'p i Ic TEXAS I N ST R U M EN TS T! cannot assume any responsibility for any circuits shown 2-34 or represent that they are free from natent infringement. TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY T IN ORDER TO (MPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSt3-4 SILIZIUM-KOMPLEMENTARE-LEISTUNGSTRANSISTOREN (Allgemeine und NF-Anwendungen) SILICON COMPLEMENTARY POWER TRANSISTORS (General and Low-frequency Applications) Prot @ Typ To = 25 C VCEO lcp hee @ Ic type (100 C) min max min max NPN PNP Ww A A BD 239 BD 240 30 45 2 40 0,2 BD 239A BD 240A 30 60 2 40 0,2 BD 239 B BD 240B 30 80 2 40 0,2 BD 239 C BD 240C 30 100 2 40 0,2 BD 241 BD 242 40 45 3 25 1 BD 241A BD 242A 40 60 3 25 1 BD 241B BD 2428 40 80 3 25 1 BD 241C BD 242C 40 100 3 25 1 BD 243 BD 244 65 45 6 30 9,3 BD 243A BD 244A 65 60 6 30 0,3 BD 2438 BD 244B 65 80 6 30 0,3 BD 243 C BD 244C 65 100 6 30 0,3 BD 245 BD 246 80 45 10 40 1 BD 245A BD 246A 80 60 10 40 1 BD 2458 BD 246B 80 80 10 40 1 BD 245C BD 246C 80 100 10 40 1 BD 249 BD 250 125 45 25 25 1,5 BD 249A BD 250A 125 60 25 25 1,5 BD 249 B 8D 250B 125 80 25 25 15 BD 249C BD 250C 125 100 25 25 1,5 TIP 29 TIP 30 30 40 1 40 200 0,2 TIP 29A TIP 30A 30 60 1 40 200 0,2 TIP 29B TIP 308 30 80 1 40 200 0,2 TIP 29C Tip 30C 30 100 1 40 200 0,2 TIP 31 TIP 32 40 40 3 25 100 1 TIP31A TIP 32 A 40 60 3 25 100 1 TIP 31B TIP 32B 40 80 3 25 100 1 TIP 31C TIP 32C 40 100 3 25 100 1 TIP 33 TIP 34 80 40 10 40 125 1 TIP 33 A TIP 34A 80 60 10 40 125 1 TIP 33 B TIP 348 80 80 10 40 125 1 TIP 33.6 TIP 34 80 100 10 40 125 1 TAP 35 TIP 36 90 40 25 25 100 1,5 TIP 35A TIP 386A 90 60 25 25 100 15 TEXAS INSTRUMENTSfr Ices @ VCE Gehause Anwendungen, Bemerkungen mn (IcEQ} package applications, remarks Mz HA Vv TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P Verstarker, Schalter TO-66P amplifier, switch TO-66P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P 3 200 40 TO-66P Verstarker, Schalter, komplementar zu TIP 30 amplifier, switch, complementary to TIP 30 3 200 60 TO-66P Verstarker, Schaiter, komplementar zu TIP 30 A amplifier, switch, complementary to TIP 30 A 3 200 80 TO-66P Verstarker, Schalter, komplementar zu TIP 30 B amplifier, switch, complementary to TIP 30 B 3 200 100 TO-66P Verstarker, Schalter, komplementar zu TIP 30 C amplifier, switch, complementary to TIP 30 C 3 300 40 TO-66P Verstarker, Schalter, komplementar zu TIP 32 amplifier, switch, complementary to TIP 32 3 300 60 TO-3P Verstarker, Schalter, komplementar zu TIP 32 A amplifier, switch, complementary to TIP 32 A 3 300 80 TO-3P Verstarker, Schalter, komplementar zu TIP 32 B amplifier, switch, complementary to TIP 32 B 3 300 100 TO-3P Verstarker, Schalter, komplementar zu TIP 32 C amplifier, switch, complementary to TIP 32 C 3 400 40 TO-3P Verstarker, Schalter, komplementar zu TIP 34 amplifier, switch, complementary to TIP 34 3 400 60 TO-3P Verstarker, Schalter, komplementar zu TIP 34 A amplifier, switch, complementary to TIP 34 A 3 400 80 TO-3P Verstarker, Schalter, komplementar zu TIP 34 B amplifier, switch, complementary to TIP 34 B 3 400 100 TO-3P Verstarker, Schalter, komplementar zu TIP 34 C amplifier, switch, complementary to TIP 34 C 3 700 40 TO-3P Verstarker, Schalter, komplementar zu TIP 36 amplifier, switch, complementary to TIP 36 3 700 60 TO-3P Verstarker, Schalter, komplementar zu TIP 36 A amplifier, switch, complementary to TIP 36 A TEXAS INSTRUMENTS 3-5Typ f Vcc Pin Pout BVcBO BVCEQ Gehause type MHz package 2N 5713 150 13 3,4 11 60 40 TO-128 2N 5773 400 28 0,12 15 65 35 TO-117 2N 5774 400 26 1 8 65 35 TO-129 2N 5848 50 12,5 3,25 20 48 24 145 Prot @ Typ Te = 25 0C VCEO Iep here @-sIe type (100 C) min max min max PNP NPN w Vv A A BD 136 BD 135 6,5 45 1 40 250 0,15 BD 138 BD 137 65 60 1 40 160 0,15 BD 140 BD 139 65 80 1 40 160 0,15 BD 240 BD 239 30 45 2 40 0,2 BD 240A BD 239A 30 --60 2 40 0,2 BD 2408 BD 239 B 30 -80 -2 40 02 BD 240C BD 239C 30 100 ~2 40 0,2 BD 242 BD 241 40 45 -3 25 1 BD 242A BD 241A 40 ~60 ~3 25 1 BD 242B BD 241B 40 80 -3 25 1 BD 242C BD 241C 40 100 3 25 1 BD 244 BD 243 65 45 6 30 0,3 BD 244A BD 243A 65 60 6 30 0,3 BD 244B BD 2438 65 80 -6 30 0,3 BD 244C BD 243C 65 100 6 30 0,3 BD 246 BD 245 80 45 10 40 1 BD 246A BD 245A 80 60 10 40 1 BD 246 B BD 2458 80 --80 ~10 40 1 BD 246C BD 245C 80 100 --10 40 1 BD 250 BD 249 125 45 25 25 1,5 BD 250A BD 249A 125 60 25 25 15 BD 2508 BD 2498 125 80 --25 25 1,5 BO 250C BD 249C 125 100 25 25 1,5 BDX 14 30 ~60 3 25 100 0,5 BDX 15 117 70 10 20 70 4 3-14 TEXAS INSTRUMENTSTyp type 2N 5941 2N 5942 2N 5943 MHz 30 250 Vcc 28 28 1 Pin Pout BVcBO BVCcEO Gehause package 40PEP 65 35 DIA-4L 80PEP 65 35 DIA-4L 50 mA 7dB 40 30 TO-39 trin WHz Ices @ VCE (IcEO) uA Vv Gehause package SOT-32 SOT-32 SOT-32 TO-66P TO-66P TO-66P TO-S6P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P 08 08 TO-66 TO-3 Anwendungen, Bemerkungen applications, remarks Prot = Tc 65 C Verstarker und Schalter amplifier and switch Schaiter, Verstarker, komplementar 2N 3054 Schalter, Verstarker, komplementar 2N 3055 TEXAS INSTRUMENTS 3-15