Philips Semiconductors Product specification
Thyristors BT152B series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope suitable for surface
mounting, intended for use in BT152B- 400R 600R 800R
applications requiring high VDRM, Repetitive peak off-state 450 650 800 V
bidirectional blocking voltage VRRM voltages
capability and high thermal cycling IT(AV) Average on-state current 13 13 13 A
performance. Typical applications IT(RMS) RMS on-state current 20 20 20 A
include motor control, industrial and ITSM Non-repetitive peak on-state 200 200 200 A
domestic lighting, heating and static current
switching.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
mb anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-400R -600R -800R
VDRM Repetitive peak off-state - 45016501800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 103 ˚C - 13 A
IT(RMS) RMS on-state current all conduction angles - 20 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 200 A
t = 8.3 ms - 220 A
I2tI
2
t for fusing t = 10 ms - 200 A2s
dIT/dt Repetitive rate of rise of ITM = 50 A; IG = 0.2 A; - 200 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
IGM Peak gate current - 5 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 20 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
13
mb
2
ak
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT152B series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 1.1 K/W
junction to mounting base
Rth j-a Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 3 32 mA
ILLatching current VD = 12 V; IGT = 0.1 A - 25 80 mA
IHHolding current VD = 12 V; IGT = 0.1 A - 15 60 mA
VTOn-state voltage IT = 40 A - 1.4 1.75 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, IROff-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.2 1.0 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 200 300 - V/µs
off-state voltage exponential waveform gate open circuit
tgt Gate controlled turn-on VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs; - 2 - µs
time ITM = 40 A
tqCircuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 70 - µs
turn-off time ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
September 1997 2 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT152B series
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
103˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 5 10 15
0
5
10
15
20
25
a = 1.57
1.9
2.2
2.8
4
BT152
IT(AV) / A
Ptot / W Tmb(max) / C
125
119.5
114
108.5
103
97.5
conduction
angle form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1 10 100 1000
0
50
100
150
200
250 BT152
Number of half cycles at 50Hz
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
10
100
1000 BT152
10us 100us 1ms 10ms
T / s
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
10
20
30
40
50 BT152
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
5
10
15
20
25 BT152
Tmb / C
IT(RMS) / A
103 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6 BT151
Tj / C
VGT(Tj)
VGT(25 C)
September 1997 3 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT152B series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT152
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2
0
10
20
30
40
50
typ
BT152
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 1.12 V
Rs = 0.015 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT145
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10 BT152
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT152
Tj / C
IH(Tj)
IH(25 C)
0 50 100 150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
RGK = 100 Ohms
September 1997 4 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT152B series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT404 : minimum pad sizes for surface mounting
.
Notes
1. Plastic meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
September 1997 5 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT152B series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 6 Rev 1.100
