6 Lake Street, Lawrence, MA 01841 03/98 REV: D
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 1 of 2
MAXIMUM RATINGS
Ratings Symbol 2N4854 / 2N4854U Units
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC600 mAdc
One
Transistor Total
Device
Total Power Dissipation @ TA =+250C(1)
@ TC + 250C(2) PT0.30
1.0 0.60
2.0 W
W
Operating & Storage Junction
Temperature Range TJ, Tstg -55 to +200 0C
Lead to Case Voltage ±120 Vdc
1) For TA > +250C Derate linearly 1.71 mW/0C (one transistor) 3.43 mW/0C (both transistors)
2) For TC > +250C Derate linearly 5.71 mW/0C (one transistor) 11.43 mW/0C (both transistors)
3) TC rating do not apply to Surface Mount devices (2N4854U)
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 µAdc V(BR)CBO 60 Vdc
Collector-Emitter Breakdown Current
IC = 10 mAdc V(BR)CEO 40 Vdc
Emitter-Base Breakdown Voltage
IE = 10 µAdc V(BR)EBO 5.0 Vdc
Collector-Emitter Cutoff Current
VCB = 50 Vdc ICBO 10 ηAdc
Collector-Emitter Cutoff Current
VEB = 3.0 Vdc IEBO 10 ηAdc
TECHNICAL DATA
2N4854 JTX, JTXV
2N4854U JTX, JTXV
Processed per MIL-PRF-19500/421
NPN/PNP SILICON COMPLEMENTARY
SMALL-SIGNAL DUAL TRANSISTOR
2N4854
TO-78
2N4854U
6 Pin Surface Mount
MIL-PRF
QPL
DEVICES
6 Lake Street, Lawrence, MA 01841 03/98 REV: D
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 2 of 2
2N4854, 2N4854U JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
hFE
50
35
50
75
100
35 300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc VCE(sat) 0.40 Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc VBE(sat) 0.80 1.25 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hfe 60 300
Forward Current Transfer Ratio, Magnitude
IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz hfe2.0 8.0
Small-Signal Common Emitter Input Impedance
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hje 1.5 9.0 kΩ
Small-Signal Common Emitter Output Admittance
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hoe 50 µhmo
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 8.0 pF
Noise Figure
IC = 100 µAdc, VCE = 10 Vdc, f = 1.0 kHz, RG =1.0 kΩNF 8.0 dB
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = 15 mAdc ton 45 ηs
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc toff 300 ηs
(3)Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
