MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1
April 2009
MOC211M, MOC212M, MOC213M
Small Ouline Optocouplers Transistor Output
Features
UL recognized (File #E90700, Volume 2)
VDE recognized (File #136616) (add option ‘V’ for
VDE approval, e.g., MOC211VM)
Convenient plastic SOIC-8 surface mountable
package style
Standard SOIC-8 footprint, with 0.050" lead spacing
Compatible with dual wave, vapor phase and
IR reflow soldering
High input-output isolation of 2500 V
AC(rms)
guaranteed
Minimum BV
CEO
of 30V guaranteed
Applications
General purpose switching circuits
Interfacing and coupling systems of different
potentials and impedances
Regulation feedback circuits
Monitor and detection circuits
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for through-
the-board mounting.
Schematic
BASE
N/CANODE
CATHODE
1
2
3
45
6
7
8
EMITTER
COLLECTORN/C
N/C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 2
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
Symbol Rating Value Unit
EMITTER
I
F
Forward Current – Continuous 60 mA
I
F
(pk) Forward Current – Peak (PW = 100µs, 120pps) 1.0 A
V
R
Reverse Voltage 6.0 V
P
D
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
90
0.8
mW
mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage 30 V
V
ECO
Emitter-Collector Voltage 7.0 V
V
CBO
Collector-Base Voltage 70 V
I
C
Collector Current-Continuous 150 mA
P
D
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
150
1.76
mW
mW/°C
TOTAL DEVICE
V
ISO
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)
(1)(2)(3)
2500 Vac(rms)
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
250
2.94
mW
mW/°C
T
A
Ambient Operating Temperature Range -40 to +100 °C
T
stg
Storage Temperature Range -40 to +150 °C
T
L
Lead Soldering Temperature
(1/16
"
from case, 10 sec. duration)
260 °C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 3
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
*Typical values at T
A
= 25°C
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 10mA 1.15 1.5 V
I
R
Reverse Leakage Current V
R
= 6.0V 0.001 100 µA
C
IN
Input Capacitance 18 pF
DETECTOR
I
CEO1
I
CEO2
Collector-Emitter Dark Current V
CE
= 10V, T
A
= 25°C
V
CE
= 10V, T
A
= 100°C
1.0
1.0
50 nA
µA
BV
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 100µA 30 100 V
BV
ECO
Emitter-Collector Breakdown
Voltage
I
E
= 100µA 7.0 10 V
C
CE
Collector-Emitter Capacitance f = 1.0MHz, V
CE
= 0 7.0 pF
COUPLED
CTR Collector-Output Current
(4)
MOC211M
MOC212M
MOC213M
I
F
= 10mA, V
CE
= 10V
20
50
100
%
V
ISO
Isolation Surge Voltage
(1)(2)(3)
f = 60 Hz AC Peak, t = 1 min. 2500 Vac(rms)
R
ISO
Isolation Resistance
(2)
V = 500V 10
11
V
CE (sat)
Collector-Emitter Saturation Voltage I
C
= 2.0mA, I
F
= 10mA 0.4 V
C
ISO
Isolation Capacitance
(2)
V = 0V, f = 1MHz 0.2 pF
t
on
Turn-On Time I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
(Fig. 10)
7.5 µs
t
off
Turn-Off Time I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
(Fig. 10)
5.7 µs
t
r
Rise Time I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
(Fig. 10)
3.2 µs
t
f
Fall Time I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
(Fig. 10)
4.7 µs
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 4
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Typical Performance Curves
Fig. 2 Output Curent vs. Input Current
I
F
– LED INPUT CURRENT (mA)
0.1 1 10 100
IC – OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.01
0.1
1
10
V
CE
= 5V
NORMAL IZED TO I
F
= 10 mA
Fig. 3 Output Current vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (°C)
-80 -60 -4 0 -20 0 20 40 60 80 100 120
IC – OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.1
1
10
NORMALIZED TO TA = 25°C
Fig. 4 Output Current vs. Collector-Emitter Voltage
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
012345678910
IC – OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
F
= 10 mA
NORM AL IZED TO VCE = 5V
Fig. 5 Dark Current vs. Ambient Temperature
Fig. 6 CTR vs. RBE (Unsaturated)
T
A
– AMBIENT TEMPERATURE (°C)
020406080100
ICEO – COLLECTOR -EMITTER DARK CURRENT (nA)
0.1
1
10
100
1000
10000
VCE = 10V
I
F
– LED FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= –55°C
T
A
= 25°C
T
A
= 100°C
RBE BASE RESISTANCE (k)
10 100 1000
NORMALIZED CTR
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
F
mA
I
F
=
I
F
= 20
10mA
= 5mA
V
CE
= 5V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 5
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Typical Performance Curves
(Continued)
Figure 10. Switching Time Test Circuit and Waveforms
NORM
Fig. 8 Normalized ton vs. RBE
Fig. 9 Normalized toff vs. RBE
Fig. 7 CTR vs. RBE (Saturated)
RBE RBE
BASE RESISTANCE (k)
10 100 1000
NORMALIZED CTR
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20mA
IF = 10mA
IF = 5mA
VCE = 0.3V, TA = 25°C
Normalized to:
CTR at RBE = Open
BASE RESISTANCE (M )
(M)
0.01 0.1 1 10 100
ALIZED t
on
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CC
= 10V
I
C
= 2mA
R
L
= 100
NORMALIZED TO :
t
on
AT R
BE
= OPEN
RBE BASE RESISTANCE
0.01 0.1 1 10 100
NORMALIZED tofff
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
CC
= 10V
I
C
= 2mA
R
L
= 100
NORMALIZED TO :
t
offf
AT R
BE
= OPEN
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT
trtf
INPUT
IF RL
RBE
VCC = 10V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce IC = 2mA
WAVEFORMS
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 6
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Package Dimensions
8-pin SOIC Surface Mount
Recommended Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
Lead Coplanarity: 0.004 (0.10) MAX
0.202 (5.13)
0.182 (4.63)
0.021 (0.53)
0.011 (0.28)
0.050 (1.27) Typ.
0.164 (4.16)
1
8
0.144 (3.66)
0.244 (6.19)
0.224 (5.69)
0.143 (3.63)
0.123 (3.13)
0.008 (0.20)
0.003 (0.08)
0.010 (0.25)
0.006 (0.16)
SEATING PLANE
0.024 (0.61)
0.050 (1.27)
Dimensions in inches (mm).
0.155 (3.94)
0.275 (6.99)
0.060 (1.52)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 7
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Ordering Information
Marking Information
Option Order Entry Identifier Description
VVVDE 0884
R2 R2 Tape and reel (2500 units per reel)
R2V R2V VDE 0884, Tape and reel (2500 units per reel)
1
2
6
43 5
Definitions
1Fairchild logo
2Device number
3 VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘8’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
211
SYYXV
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 8
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Carrier Tape Specifications
4.0 ± 0.10
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
5.5 ± 0.05
12.0 ± 0.3
8.0 ± 0.10
0.30 MAX
8.3 ± 0.10
3.50 ± 0.20
Dimensions in mm
0.1 MAX 6.40 ± 0.20
5.20 ± 0.20
Ø1.5 ± 0.1
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 9
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (t
S
) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (t
L
to t
P
) 3°C/second max.
Liquidous Temperature (T
L
) 217°C
Time (tL) Maintained Above (TL) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsmax
Tsmin
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 10
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intended to be an exhaustive list of all such trademarks.
Auto-SPM
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CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
Fairchild®
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FACT®
FAST®
FastvCore
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FlashWriter®*
FPS
F-PFS
FRFET®
Global Power ResourceSM
Green FPS
Green FPSe-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START
SPM®
STEALTH™
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS™
SyncFET™
Sync-Lock
®*
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TinyBoost
TinyBuck
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TriFault Detect
TRUECURRENT*
µSerDes
UHC®
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VCX
VisualMax
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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any manner without notice.
Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I40
First Production
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output