TOPAZ SEMICONDUCTOR OSE D Bi sosseat g001098 0 i SEMIC: CONDUC TOR T-29-25 . VNIZSKN N-CHANNEL ENHANCEMENT-MOBDE D-NMOS POWER FETs ORDERING INFORMATION TO-92 Plastic Package VNIOKN3 Description 60V, 5 ohm APPLICATIONS FEATURES Bi High Gate Oxide Breakdown, +40V min. Low Output and Transfer Capacitances @ Extended Safe Operating Area @ High-Speed Pulse Amplifiers M@ Logic Suffers Hf Line Drivers lM Solid-State Relays EH Motor Controls HM Power Supplies ABSOLUTE MAXIMUM RATINGS (T, = +25C unless otherwise noted) Drain-Source Voltage ....... ccc c eect eee en ene +60V Drain-Gate Voltage (Vas= 0) .......-..-- 20-06 +60V Gate-Source Voltage ..... cece eee eee eens x30V Continuous Drain Current Ta = 25C Te = 25C .24A 382A Peak Pulsed Drain Current ..........ce ee ee eee 1.0A SCHEMATIC DIAGRAM/PACKAGE TO-92 Drain y & Gate 3} Source s GD Continuous Device Dissipation Ta = +25C To = +25C 0.30 1.0 WwW Linear Derating Factor Ta = +25C To = +25C 2.4 8.0 mWw/C Operating Junction Temperature Range ....... cece eee eee -55 to +150C Storage Temperature Range .......... -55 to +150C Lead Temperature (1/16 from mounting surface for 30 Sec) icc c cece cece cece e nee +260C PACKAGE DIMENSIONS (TO-92) TO-226AA (See Package 5} 3-142 0-88-6 TOPAZ SEMICONDUCTOR OSE D B soaseh 0001099 1 I - TEIAZ ane SEMICONDUCTOR 0 ELECTRICAL CHARACTERISTICS (T, = +25C unless otherwise noted) # CHARACTERISTIC VN1OKN UNIT | TEST CONDITIONS ~ MIN TYP MAX 1 BVoss Drain-Source 60 100 Vv Ip = 10044, Ves = 0 Breakdown Voltage 2 Vestm Gate-Source 0.8 19 2.5 Vv Ib = 1.0MA, Vos = Ves Threshold Voltage 3 leas + Gate-Body +1.0 +100 nA Ves = +15V, Vos = 0 Leakage Current 41 & | loss Drain-Source OFF 0.1 10 BA Vos = 40V, & Ves =0 5| 5 Leakage Current 5.0 500 Ta = 125C 6 Ibm = ON Drain Current 0.25 A Ves=5V, | Vos = 10V 7 0.75 Vas = 10V (Note 1) 8 Vostow Drain-Source 1.5 2.5 Vv Ves = 10V, Ip = 0.5A ON Voltage (Note 1) 9 Drain-Source 3.0 5.0 ohms | Ves=10V, lp=0.5A (Note 1) 10 Toston) ON Resistance 47 9.0 Ta = +125C 1 Gs Common-Source 100 400 mmhos | Vos = 10V, In = 0.5A Forward Transcond. f=1KHz (Note 4) 12 Ciss Common-Source 80 100 Input Capacitance 13 2 Crs Common-Source 1.3 5.0 pF Vos = 15V, Vas = 0 < Reverse Transfer f = 1MHz < Capacitance 14| Coss | Common-Source 10.5 25 Output Capacitance 15 ton Turn-On Time 5.0 10 nSec | Von = Vaten = 10V 16 tott Turn-Off Time 6.0 10 Ag = 250, Ri = 250 Note 1: Pulse Test 80y Sec, 1% Duty Cycle 3-143