AD810* * AD813* * AD816* A0821 AD831* * AD833A* ADY27* 8C140-10* 40-16" 41-6* BC141-10* * BC160-10* 8C161-10* BC337/BC327 * BCY88 ee 8D182* * BFO11* 2* ae BFQ14* BFWw39 /BFW40A BEX11* BFX15* BFX36* BFX72* * BFY81 BFY84 * BFYS1 CO4ER CO6EG CO8EG 915 118/5 121 ESM25* HA7807 IMF5565* * IMF5912 iMF6485* _ IT120* IT120A* a2 IT122* 17124* 5 6* 1T127* * IT130* PA PA PA PA PJ PJ cp AD AD AD AD IN ORDER OF: (1)CATEGORY,{2}TYPE NO. DESCRIPTION Pt Vmax;AVBE(1-2)/AT 18uV/C Pt 500m vmaxcA 2V/AT 2.5uV/C Pt 750m 1-2)1.0mVmax:A 1. AT .0uV/C 200MHz min;BVCBO 45Vmin;hFE 150-600.ic 1 / 4-2} 1. Vmax:AVB 1-2)/AT S5uV/C Pt 7 1- Vmax;A AT 10uV/*Cmax:yfs 1/2 .99 Pt 7 1- VmaxcA AT 75uV/Cmaxyfs 1/2 .99 HFE1/hFE2 1.25 27 150uA;ft . at J max Pt 3.7W at 45C case:Vsat 1.0V maxchFE 1/2 1.25 max . . 725 max Pt 3.7W at 45C case;Vsat 1.0V max;hFE 1/2 1.25 max at . max Pt 3.7W at 45C case;Vsat 1.0V max:hFE 1/2 1.25 max at . max Pt 3.7W at 45C case;Vsat 1.0V max;hFE 1/2 1.25 max typ. 1. hFE1/2 1.25 1.4 max;Pt 500mW;BVCES 50V;ft 1O0OMHz. 4-2)-6.0mV 1. max:AV/AT-2.0uV/deg.C. max OV. BYCBO 70V;Pt 11 1/hFE2 1.3 max at Ic 4.0A,VCE 4.0V. dAVGS/dT SuV/*CAAVGS 10mV; 30uV/V1D1-S1S/ID2-S2S _1.03max. ; -O5max. dAVGS/dT 20uV/C;AVGS 15mV;AgoS/gfs /V;ID1-$1S/ID2-S2S 1.08max. Pt. FE1/2- min; mV:;hFE-60 min. Pt 50W 1/2-1.1 maxccA E-10uV/C max. Pt-40W each-hFE 1/hFE2-.90 Pt. 6W:hFE 1-2..90 1- max, 1/2-3.0mV_ max:iCBO-10nA max. -OmV max;A 1 AT-25uV/deg.C. Pt. ft-60Mc min;hFE1/2-.80 min:VBE(1-2)-10mV max. Pt-.38W:BVCBO-30V-ft-60OMc i - max. 1/2-.80 min; 1-2)-15mV max. i max. VCEO-45V;hFE-60-240/10uA;5mV-VBE match; 10%hFE match. ; max. 50uA max;GmiDSS VGS match 5.0%;VGS diff 5.0mV 50uv/C max. 0%; . max. IGSS 500uA max;GmiDSS match 10%;VGS diff 20mV max;Drift 100uV/C max. . . max. IGSS SOpA max;VGS diff 10mvV, IDSS VGS match 10% 100uV/C max. Chips;Match Char at Ic 10uA,Vce 5V-Vbe Diff 5.0mV Max,DC Gain Ratio 0.85-1.0 ce 5V- . Pr DSS1/2 0.8min.1. 1-2)25mV_ max;VGS(1-2)/TA80uUV/C max. max Pair of HA7806;Vo-2.0mV max. Matched Dual JFET: 1-2)10mV:G-S Diff Drift 25uv/CI 1-2)1.0 Max DiElectrically 1- V:JFET = - max. Pd 750m OmV max!B(1- max. - max. Pd 750m .OmV:;VBE(1- 5.0uV/C;IB(1-2) GOOpA max. 5 - max. Pt 750m OmV max;IB(1-2)5.0nA max. = max. Pt7 Vv 1- max. - max. Pt7 OmV maxIB(1-2)25nA max. 7 max.