PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com These devices are designed for use in general-purpose amplifier and switching applications. Features * DC Current Gain Specified to 7.0 Amperes * * * * hFE = 30-150 @ IC = 3.0 Adc - 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11 TO-220AB Compact Package Pb-Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Value Unit VCEO Vdc 30 50 70 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage VCB 2N6111, 2N6288 2N6109 2N6107, 2N6292 Emitter-Base Voltage Vdc 40 60 80 VEB 5.0 Vdc IC 7.0 10 Adc Base Current IB 3.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 W W/C TJ, Tstg -65 to +150 C Symbol Max Unit RqJC 3.125 _C/W Collector Current - Continuous - Peak Operating and Storage Junction Temperature Range MARKING DIAGRAM 4 TO-220AB CASE 221A STYLE 1 1 Symbol Collector-Emitter Voltage 7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 - 50 - 70 VOLTS, 40 WATTS 2 2N6xxxG AYWW 3 2N6xxx xxx G A Y WW = Specific Device Code = See Table on Page 4 = Pb-Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 August, 2006 - Rev. 7 1 Publication Order Number: 2N6107/D PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIII IIIIIIIIIIIIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII III IIII III IIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max 30 50 70 - - - - - - 1.0 1.0 1.0 - - - - - - 100 100 100 2.0 2.0 2.0 - 1.0 30 30 30 2.3 150 150 150 - Unit OFF CHARACTERISTICS VCEO(sus) Collector-Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 Vdc ICEO mAdc mAdc ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc) (IC = 2.5 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 7.0 Adc, VCE = 4.0 Vdc) hFE 2N6107, 2N6292 2N6109 2N6111, 2N6288 All Devices - Collector-Emitter Saturation Voltage (IC = 7.0 Adc, IB = 3.0 Adc) VCE(sat) - 3.5 Vdc Base-Emitter On Voltage (IC = 7.0 Adc, VCE = 4.0 Vdc) VBE(on) - 3.0 Vdc 4.0 10 - - DYNAMIC CHARACTERISTICS fT Current Gain -- Bandwidth Product (Note 4) (IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 92 2N6107, 09, 11 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob - 250 pF Small-Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) hfe 20 - - 2. 3. 4. Indicates JEDEC Registered Data. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT = |hfe| * ftest http://onsemi.com 2 PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 VCC +30 V 25 ms RC +11 V SCOPE RB 0 D1 51 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% -4 V RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA Figure 2. Switching Time Test Circuit 2.0 1.0 TJ = 25C VCC = 30 V IC/IB = 10 t, TIME (s) 0.7 0.5 0.3 0.2 tr 0.1 0.07 0.05 td @ VBE(off) 5.0 V 0.03 0.02 0.07 0.1 0.2 0.3 0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 5.0 7.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Turn-On Time 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 D = 0.5 0.2 0.1 0.02 0.02 0.01 0.01 ZqJC(t) = r(t) RqJC RqJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 4. Thermal Response http://onsemi.com 3 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 15 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPS) 0.1 ms 0.5 ms 7.0 5.0 dc 3.0 2.0 0.1 ms CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 1.0 0.7 0.5 0.3 0.2 0.15 1.0 5.0 ms 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area 5.0 300 t, TIME (s) 2.0 ts 1.0 0.7 0.5 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 tr 0.3 0.2 TJ = 25C Cib 100 70 Cob 50 0.1 0.07 0.05 0.07 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 30 0.5 5.0 7.0 1.0 Figure 6. Turn-Off Time 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance ORDERING INFORMATION Device Device Marking Package 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free) TO-220AB (Pb-Free) 50 Units / Rail TO-220AB 2N6288 TO-220AB (Pb-Free) 2N6292 2N6292G 50 Units / Rail TO-220AB 2N6111 2N6288 2N6288G 50 Units / Rail TO-220AB 2N6109 2N6111 2N6111G Shipping 50 Units / Rail TO-220AB 2N6292 TO-220AB (Pb-Free) http://onsemi.com 4 50 Units / Rail 30 50 PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AD -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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