CMX901 RF Power Amplifier CML Microcircuits COMMUNICATION SEMICONDUCTORS Broadband Efficient RF Power Amplifier D/901/6 DATASHEET April 2020 Provisional Information Features Applications VGS2 VGS3 Wireless data communications FSK, FFSK/MSK, GFSK/GMSK, Multi-level FSK Analogue FM handheld radio terminals Marine AIS Class-B and Marine AIS-SART RFID readers/writers Automatic meter reading (AMR) Wireless sensor networks Mesh/Ad hoc systems Remote control and sensing systems Commercial and consumer communications VDD2 Wide operating frequency range 130MHz to 950MHz Typical output power: * 2.5W operating at 160MHz * 1.8W operating at 435MHz * 1.5W operating at 915MHz High power gain 40dB High power added efficiency up to 60% at VHF Single polarity supply voltage 2.5V to 6V Small 28 pin WQFN package VDD1 RFOUT RFIN RFOUT PAPA 11 PA 2 RFOUT PA 3 RFIN RFOUT CMX901 VA VGS1 1 RFOUT Brief Description The CMX901 is a three stage high-gain and high efficiency RF power amplifier. The device is ideally suited for use in VHF and UHF frequency bands up to 950MHz. The first and second stages of the amplifier operate in a class-A and class-AB mode respectively, and the third stage operates in a class-C mode for maximum efficiency. External components are required to match the device input and output ports to 50 Ohms. The CMX901 is available in a small footprint 5mm x 5mm, low thermal resistance 28-pin WQFN package making it ideal for small form factor applications such as data modules as well as handheld radio terminals. 2020 CML Microsystems Plc D/901/6 Page 1 of 16 RF Power Amplifier CMX901 CONTENTS Section Page 1 1.1 Brief Description....................................................................................................................................................... 1 History ...................................................................................................................................................................... 3 2 Block Diagram .......................................................................................................................................................... 3 3 3.1 3.1.1 3.1.2 3.1.3 3.2 3.2.1 3.2.2 3.2.3 Performance Specification ........................................................................................................................................ 4 Electrical Performance .............................................................................................................................................. 4 Absolute Maximum Ratings ....................................................................................................................................... 4 Operating Limits........................................................................................................................................................ 4 Operating Characteristics .......................................................................................................................................... 5 Typical Performance.................................................................................................................................................. 6 Operation at 160MHz ................................................................................................................................................ 6 Operation at 435MHz ................................................................................................................................................ 7 Operation at 915MHz ................................................................................................................................................ 8 4 4.1 4.2 Pin and Signal Definitions ......................................................................................................................................... 9 Pin List ...................................................................................................................................................................... 9 Signal Definitions .................................................................................................................................................... 10 5 5.1 5.2 5.2.1 5.2.2 Application Information ......................................................................................................................................... 11 General Description ................................................................................................................................................ 11 Main Characteristics................................................................................................................................................ 11 Input Impedance ..................................................................................................................................................... 11 Thermal Design ....................................................................................................................................................... 12 6 General Application Schematic ............................................................................................................................... 13 7 PCB Layout ............................................................................................................................................................. 14 8 8.1 8.1.1 Application Notes ................................................................................................................................................... 14 Output Power Control ............................................................................................................................................. 14 TDMA Operation ..................................................................................................................................................... 14 9 9.1 Packaging ............................................................................................................................................................... 15 Ordering ................................................................................................................................................................. 15 Table Page Table 1 S-parameter data (S11), VDD = 4V, Vgs1 = 1.65V, Vgs2 = 1.35V and Vgs3 = 0.93V, Ids = 18mA .......................................... 12 Table 2a Recommended External Components (variations with frequency) ............................................................................... 14 Figure Page Figure 1 CMX901 Block Diagram ................................................................................................................................................. 3 Figure 2 Input power to output power characteristic, VDD = 4V .................................................................................................... 6 Figure 3 Variation of output power with temperature, V DD = 4V, VPARAMP = 3.3V, input level = -5dBm .................................... 6 Figure 4 Output power vs. control voltage characteristics and variation with temperature, V DD = 4V, input level = -5dBm ............. 6 Figure 5 Output power and efficiency variation with temperature, V DD = 4V, input level = -5dBm, VPARAMP = 3.3V .......................... 6 Figure 6 Input power to output power characteristic, V DD = 4V at 435MHz ................................................................................... 7 Figure 7 Variation in output power with temperature, V DD = 4V, VPARAMP = 3.3V, input level = -10dBm .......................................... 7 Figure 8 Output power vs. control voltage characteristics variation with temperature, V DD = 4V, input level = -10dBm.................. 7 Figure 9 Output power and efficiency variation with temperature, V DD = 4V, input level = -10dBm, VPARAMP = 3.3V ........................ 7 Figure 10 Input power to output power characteristic, V DD = 4V at 915MHz ................................................................................. 8 Figure 11 Variation in output power with temperature, V DD = 4V, VPARAMP = 3.3V, input level = 0dBm ........................................... 8 Figure 12 Output power vs. control voltage characteristics variation with temperature, V DD = 4V, input level = 0dBm ................... 8 Figure 13 Output power and efficiency variation with temperature, V DD = 4V, input level = 0dBm, VPARAMP = 3.3V ......................... 8 Figure 14 Pin Configuration......................................................................................................................................................... 9 Figure 15 S11 response, VDD = 4V, Vgs1 = 1.65V, Vgs2 = 1.35V and Vgs3 = 0.93V, Ids = 18mA ........................................................ 11 Figure 16 CMX901 Recommended External Components........................................................................................................... 13 Figure 17 QT8 Mechanical Outline ............................................................................................................................................ 15 2020 CML Microsystems Plc D/901/6 Page 2 of 16 RF Power Amplifier 1.1 CMX901 History Version 6 5 Changes Date Section 3.1.3.1: addition to table describing enhanced input power range condition for stability performance at 160 MHz. R2 = 200 Ohms for VHF applications 22 April 2020 nd 9th August 2019 3 Section 3: Thermal data added Section 5.2.2: Thermal Design added Datasheet changed to Provisional status Section 5.2.1: Updated s-parameter data in Table 1 2 First public release 7 February 2017 1 Internal release January 2017 4 th 19 July 2017 th 9 February 2017 th This is Provisional Information; changes and additions may be made to this specification. Parameters marked TBD or left blank will be included in later issues. VGS2 NC VDD2 NC VGS3 NC NC 28 27 26 25 24 23 22 Block Diagram VDD1 1 21 NC NC 2 20 RFOUT RFIN 3 19 RFOUT NC 4 18 RFOUT RFIN 5 17 RFOUT NC 6 16 RFOUT NC 7 15 NC PA12 PAPA 11 PA 3 9 10 11 12 13 14 NC NC NC NC VA VGS1 NC CMX901 8 2 Figure 1 CMX901 Block Diagram 2020 CML Microsystems Plc D/901/6 Page 3 of 16 RF Power Amplifier 3 Performance Specification 3.1 Electrical Performance 3.1.1 Absolute Maximum Ratings CMX901 Exceeding these maximum ratings can result in damage to the device. Notes 1 2 1 Supply: VDD - VSS IDD - ISS RF power at input pin Output load VSWR RF Power per pin Min. -0.5 Max. 12.0 2.2 15 10:1 30 Unit V A dBm dBm Notes 1. Transient and not operational i.e. Vgs1, Vgs2 and Vgs3 set to 0V 2. Rating for peak or continuous operation QT8 Package (28-pin WQFN) Storage Temperature 3.1.2 Notes Min. -50 Max. +125 Unit C Min. Max. Unit 2.5 6 2.5 V V -40 +85 +125 1.8 C C W Operating Limits Correct operation of the device outside these limits is not implied. Notes Supply Voltage: VDD - VSS VGS - VSS (per stage) Operating Air Temperature (TAMB) Maximum Allowable Junction Temperature Maximum Continuous Power Dissipation (PDISS ) 3, 4 Notes 3. Dependent on PCB layout arrangements and heatsinking, see section 5.2.2. 4. PDISS= PDC-POUT , where: PDC = VDD x IDD and POUT = measured RF output power. 2020 CML Microsystems Plc D/901/6 Page 4 of 16 RF Power Amplifier 3.1.3 CMX901 Operating Characteristics For the following conditions unless otherwise specified: External components as recommended in Figure 16, VDD = 4.0V TAMB = 25C, VBIAS = 3.3V Specification RF Frequency Range Quiescent Current (from VDD) Thermal Resistance RJC (junction to central heatsink ground pad) 3.1.3.1 Min. 130 - Typ. 2.5 Max. 950 1 3 Unit MHz A C/W Condition VBIAS = VPARAMP = 0V Operating Characteristics 160MHz RF frequency = 160MHz, RF power input = -5dBm, VPARAMP = 3.3V Specification Maximum output power (Pmax160) Power added efficiency Input power for Pmax160 Gain Second harmonic Third harmonic Fourth harmonic Other non-harmonic spurious Input VSWR Stability, VSWR 5:1 Min. - Typ. Max. 2.5 61 -5 39 45 -23 -37 -54 -75 See s11 data Stable all phases, continuous or pulsed operation, power output variation with load phase +1,-4 dB (typ.) Open circuit, Short circuit 3.1.3.2 Unit W % dBm dB dB dBc dBc dBc dBc Condition Pin = -5dBm Pout = 2.5W, VDD = 4V VDD = 4V Pin = -5dBm Pin = -15dBm Pmax 160 Pmax 160 Pmax 160 Pmax 160 See section 5.2.1 Variation from normal output power with 50 load and with input power (Pin) between -15 dBm and 0 dBm. Continuous operation for 30 seconds No damage Operating Characteristics 435MHz RF frequency = 435MHz, RF power input = -10dBm, VPARAMP = 3.3V Specification Maximum output power (Pmax435) Power added efficiency Input power for Pmax435 Gain ACPR Reverse Isolation Second harmonic Third harmonic Fourth harmonic Other non-harmonic spurious Input VSWR Min. - Typ. 1.8 52 -10 42.5 Max. - Unit W % dBm dB - - -70 dBc - -60 -30 -52 -46 See s11 data -75 dB dBc dBc dBc dBc - - Condition Pin = -5dBm Pout = 1.8W, VDD = 4V VDD = 4V EN 300 086, 25kHz channel Pmax 435 Pmax 435 Pmax 435 Pmax 435 Pmax 435 See section 5.2.1 Stability, VSWR 5:1 Stable all phases, continuous operation, power output variation with load phase 2dB (typ.) 2020 CML Microsystems Plc D/901/6 Page 5 of 16 RF Power Amplifier CMX901 Open circuit, Short circuit 3.1.3.3 No damage Continuous operation for 30 seconds Operating Characteristics 915MHz RF frequency = 915MHz, RF power input = 0dBm, VPARAMP = 3.3V Specification Maximum output power (Pmax915) Power added efficiency Input power for Pmax915 Gain Second harmonic Third harmonic Fourth harmonic Other non-harmonic spurious Input VSWR Stability, VSWR 3:1 Stability, VSWR 10:1 Open circuit, Short circuit 3.2 Typical Performance 3.2.1 Operation at 160MHz Min. - Typ. Max. 1.5 42 0 32 31 -45 -54 -52 -75 See s11 data Stable all phases, continuous operation, power output variation with load phase 2 dB (typ.) Stable all phases No damage Unit W % dBm dB dB dBc dBc dBc dBc Condition VDD = 4V Pout = 1.5W, VDD = 4V Pin = 0 dBm Pin = -10 dBm Pmax915 Pmax915 Pmax915 Pmax915 Continuous operation for 30s Performance data measured using EV9011 PCB, circuit values as Table 2 / Figure 16. Figure 2 Input power to output power characteristic, VDD = 4V Figure 3 Variation of output power with temperature, VDD = 4V, VPARAMP = 3.3V, input level = -5dBm Figure 4 Output power vs. control voltage characteristics and variation with temperature, VDD = 4V, input level = -5dBm 2020 CML Microsystems Plc Figure 5 Output power and efficiency variation with temperature, VDD = 4V, input level = -5dBm, VPARAMP = 3.3V D/901/6 Page 6 of 16 RF Power Amplifier 3.2.2 CMX901 Operation at 435MHz Performance data measured using EV9011 PCB, circuit values as Table 2 / Figure 16. Figure 6 Input power to output power characteristic, VDD = 4V at 435MHz Figure 7 Variation in output power with temperature, VDD = 4V, VPARAMP = 3.3V, input level = -10dBm Figure 8 Output power vs. control voltage characteristics variation with temperature, VDD = 4V, input level = -10dBm Figure 9 Output power and efficiency variation with temperature, VDD = 4V, input level = -10dBm, VPARAMP = 3.3V 2020 CML Microsystems Plc D/901/6 Page 7 of 16 RF Power Amplifier 3.2.3 CMX901 Operation at 915MHz Performance data measured using EV9011 PCB, circuit values as Table 2 / Figure 16. Figure 10 Input power to output power characteristic, VDD = 4V at 915MHz Figure 11 Variation in output power with temperature, VDD = 4V, VPARAMP = 3.3V, input level = 0dBm Figure 12 Output power vs. control voltage characteristics variation with temperature, VDD = 4V, input level = 0dBm Figure 13 Output power and efficiency variation with temperature, VDD = 4V, input level = 0dBm, VPARAMP = 3.3V 2020 CML Microsystems Plc D/901/6 Page 8 of 16 RF Power Amplifier 4 CMX901 Pin and Signal Definitions VGS2 NC VDD2 NC VGS3 NC NC 28 27 26 25 24 23 22 Top View VDD1 1 21 NC NC 2 20 RFOUT RFIN 3 19 RFOUT NC 4 18 RFOUT RFIN 5 17 RFOUT NC 6 16 RFOUT NC 7 15 NC 8 9 10 11 12 13 14 VGS1 NC NC NC NC NC VA Exposed Metal Pad GND Figure 14 Pin Configuration 4.1 Pin List Pin No. Pin Name Type Description 1 VDD1 PWR Power supply for the first stage 2 NC NC Connect to GND 3 RFIN IP RF signal input (off-chip DC blocking capacitor required) 4 NC NC Connect to ground 5 RFIN IP As pin 3 6 NC NC Connect to GND 7 NC NC Connect to GND 8 VGS1 IP Bias input for first stage 9 NC NC Connect to GND 10 NC NC Connect to GND 11 NC NC Connect to GND 12 NC NC Connect to GND 13 NC NC Connect to GND 14 VA PWR Connect to 3.3V 15 NC NC Connect to GND 16 RFOUT 17 RFOUT 18 RFOUT OP Power supply and RF output 19 RFOUT 20 RFOUT 21 NC NC Connect to GND 22 NC NC Connect to GND 23 NC NC Connect to GND 24 VGS3 IP Bias input for output stage 2020 CML Microsystems Plc D/901/6 Page 9 of 16 RF Power Amplifier CMX901 Pin No. Pin Name Type 25 NC NC 26 VDD2 PWR 27 28 NC VGS2 NC IP Exposed Metal Pad GND PWR Description Connect to GND Power supply for second stage Connect to GND Bias input for second stage The central metal pad must be connected to ground. Notes: OP IP 4.2 = Output = Input PWR = Power Connection NC = No internal connection Signal Definitions Signal Name VDD VGS1 VGS2 VGS3 VPARAMP Pins Usage VDD VGS1 VGS2 VGS3 N/A Power supply Bias input for the first amplifier stage Bias input for the second amplifier stage Bias input for the third amplifier stage Combined control voltage with VGS1 VGS2 configured as Figure 16 (NB: see also section 8.1). Combined control voltage VGS3 and pin VA, configured as Figure 16. Ground VBIAS N/A Vss GND 2020 CML Microsystems Plc D/901/6 Page 10 of 16 RF Power Amplifier CMX901 5 Application Information 5.1 General Description The CMX901 is a three-stage RF power amplifier producing high gain at full output power. An input power of up to 0dBm is required to achieve fully-saturated output power (0dBm at maximum operating frequency). The device requires only a single positive power supply. The primary ground connection is via a large central pad on the bottom of the package. . The first and second stages of the amplifier operate in class-A and class-AB mode, respectively. The final stage operates in Class-C mode. DC current will increase with RF input signal. The optimum load for maximum output power and efficiency is approximately 5. An external matching network is required to match this impedance to a 50 load (see Figure 16). The RFIN pins are DC biased, thus a blocking capacitor is recommended between signal source and the input pins. Vdd1 and Vdd2 provide DC power supply to the first and second stages, respectively. An RF tuning inductor is needed for each pin. Vgs1, Vgs2 and Vgs3 should be set to different bias voltages for maximum output power and efficiency; see Figure 16 and section 8.1 for further details. 5.2 Main Characteristics 5.2.1 Input Impedance Typical CMX901 input impedance (S11) is shown in Figure 15 as measured with EV9011 configured for 435MHz operation with a RC network of 470R and 1nF (but no other matching) at the input. The measured S11 response varies with interstage and output matching configuration. The configuration used for this measurement was the 435MHz circuit values from Figure 16 / Table 2. Figure 15 S11 response, VDD = 4V, Vgs1 = 1.65V, Vgs2 = 1.35V and Vgs3 = 0.93V, Ids = 18mA 2020 CML Microsystems Plc D/901/6 Page 11 of 16 RF Power Amplifier CMX901 Frequency (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S(1,1) Mag Ang 0.796 - 9.537 0.805 - 13.911 0.811 - 18.941 0.825 - 24.26 0.843 - 30.397 0.872 - 38.211 0.859 - 50.154 0.822 - 55.754 0.809 - 63.538 0.747 - 72.205 0.683 - 76.943 0.641 - 80.317 0.628 - 82.409 0.633 - 85.03 0.647 - 89.029 0.657 - 93.691 0.665 - 98.609 0.668 - 103.614 0.671 - 107.921 Table 1 S-parameter data (S11), VDD = 4V, Vgs1 = 1.65V, Vgs2 = 1.35V and Vgs3 = 0.93V, Ids = 18mA 5.2.2 Thermal Design The large central pad on the bottom of the package should be electrically and thermally connected to the PCB ground plane, typically with 20-25 vias, a 0.2mm hole size is recommended and the vias must be from top layer to bottom layer. A typical solution is a via pattern based on an inner via diameter of 0.200mm (0.025mm plating of via walls), with 25 vias on a 0.670mm grid pattern; the vias do not need to be filled. The PCB layout should provide a thermal radiator appropriate for the intended operation/duty cycle in order to avoid an excessive junction temperature. It should be noted that the peak power dissipation may exceed the maximum rated continuous power dissipation (PDISS ) when the transmitter is used for discontinuous transmission for example in TDMA transmission systems. In this case average power dissipation should not exceed P DISS. 2020 CML Microsystems Plc D/901/6 Page 12 of 16 RF Power Amplifier 6 CMX901 General Application Schematic VDD C1 GND C4 C5 C2 L2 C3 C6 R2 R1 L1 C7 L3 C20 GND GND GND Vgs3 22 NC NC 23 24 NC VGS3 25 26 NC VDD2 NC RFOUT RFOUT NC RFOUT NC NC 21 20 19 L5 18 17 C10 16 C8 C11 RFOUT C12 15 VA GND 14 GND 13 8 VGS1 C23 NC RFIN NC 7 RFOUT Exposed Metal Pad NC 6 R3 RFIN 12 C22 RFOUT 11 5 NC NC C21 4 NC NC RFIN L4 C9 VDD1 10 3 VGS2 28 2 9 1 27 Vgs2 C24 Vgs1 GND Vbias VPARAMP R7 R5 Vgs1 R10 GND C26 R6 R8 Vgs2 R9 GND C25 Vgs3 R11 C19 GND Figure 16 CMX901 Recommended External Components 2020 CML Microsystems Plc D/901/6 Page 13 of 16 RF Power Amplifier Frequency (MHz) 160 435 915 CMX901 L1 (0603CS) (nH) 56 27 5.6 L2 (0603CS) (nH) 56 27 8.7 L3 (nH) 19 16 6 L4 (0630CS) (nH) 150 43 10 L5 (nH) C21 (pF) C22 (pF) C10 (pF) C11 (pF) C12 (pF) 12 3.6 1.8 5.6 4.7 3.3 - 12 4.7 10 56 4.7 5.6 18 - Table 2a Recommended External Components (variations with frequency) R1 R2 R3 R5 R6 R7 R8 R9 R10 R11 Notes: 1. 2. 3. 4. N/F N/F (Note 4) 680 (Note 2) 68k 100k 68k 51R 47k 68k 39k C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 4.7F Note 1 1uF Note 1 1uF Note 1 1uF Note 1 Note 1 Table 2a Table 2a Table 2a C19 C20 C21 C22 C23 C24 C25 C26 100pF N/F Table 2a Table 2a 1nF Note 1 10nF 10nF 470pF but use 47pF at 915MHz 470 recommended at 450MHz All inductors are Coilcraft (www.coilcraft.com) 200 recommended at 160MHz Table 2b Recommended External Components (common values) 7 PCB Layout Careful layout of the PCB is essential for best performance. Recommended layout may be taken from evaluation kit EV9011. 8 8.1 Application Notes Output Power Control The output power of the CMX901 can be controlled by varying VPARAMP from 0V to 3.3V. This in turn adjusts VGS1 and VGS2. It is recommended to connect VGS3, along with VA (pin 14), to 3.3V dc. This gives a satisfactory power control characteristic for TDMA systems like DMR (ETSI standards EN 300 113 and TS 102 361). 8.1.1 TDMA Operation Careful assessment of device stability is advised during power ramping when operating into non-50 loads, especially at operating frequencies of 400MHz and above. 2020 CML Microsystems Plc D/901/6 Page 14 of 16 RF Power Amplifier 9 CMX901 Packaging Figure 17 QT8 Mechanical Outline of 28-pin WQFN (QT8) 9.1 Ordering Order as Part No. CMX901 QT8 2020 CML Microsystems Plc D/901/6 Page 15 of 16 RF Power Amplifier CMX901 Handling precautions: This product includes input protection, however, precautions should be taken to prevent device damage from electro-static discharge. CML does not assume any responsibility for the use of any circuitry described. No IPR or circuit patent licences are implied. CML reserves the right at any time without notice to change the said circuitry and this product specification. CML has a policy of testing every product shipped using calibrated test equipment to ensure compliance with this product specification. Specific testing of all circuit parameters is not necessarily performed. United Kingdom Singapore United States tel: +44 (0) 1621 875500 tel: +65 62888129 tel: +1 336 744 5050 800 638 5577 email: sales@cmlmicro.com techsupport@cmlmicro.com email: sg.sales@cmlmicro.com sg.techsupport@cmlmicro.com email: us.sales@cmlmicro.com us.techsupport@cmlmicro.com www.cmlmicro.com 2020 CML Microsystems Plc D/901/6 Page 16 of 16