TOSHIBA 2SC5359 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 28C5359 POWER AMPLIFIER APPLICATIONS Unit in mm 3.3 0.2 High Collector Voltage : VogQ=230V (Min.) 2 o @ Complementary to 2S5A1987 26.00.5 @e Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 200406 MAXIMUM RATINGS (Ta =25C) .45+0.15 5.45+0.15 CHARACTERISTIC SYMBOL | RATING UNIT no Collector-Base Voltage VCBO 230 Vv o 3 Collector-Emitter Voltage VCEO 230 Vv ope ae = Emitter-Base Voltage VEBO 5 Vv Collector Current Ic 15 A 1. BASE Base Current Ip 1.5 A 2. COLLECTOR (HEAT SINK) - 3. EMITTER Collector Power Dissipation Pp 180 Ww (Te = 25C) C JEDEC Junction Temperature Tj 150 C EIAJ Storage Temperature Range Tstg 55~150 C TOSHIBA 2.01F1A Weight : 9.75g (Typ.) ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo VcBp=230V, Iz=0 5.0 | vA Emitter Cut-off Current IrBO VEB=5V, Ic =0 5.0 | vA Collector-Emitter Breakdown Voltage V (BR) CEO] 1c=50mA, Ip=0 230 7 7 Vv FE (1) VcE=5V, Ic=1A 55 160 DC Current Gain (Note) CE c _ hFE (2)_|VCE=5V, Ic=7A 35 | 87 | Collector-Emitter Saturation Voltage VCR (sat) |Ic=8A, Ip=0.8A 0.4 3.0 Vv Base-Emitter Voltage VBE VcE=5V, ICG=7A 1.0 1.5 Vv Transition Frequency ft VcE=5V, Ic=1A 30 | MHz Collector Output Capacitance | Cob Vcop=10V, In=0, f=1MHz 200 pF (Note) hFp (1) Classification R : 55~110, O : 80~160 961001 EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-02-03 1/2 TOSHIBA I VCE MMON EMITTER a c= 25C 2 & Z e 5 5 x 3 BE Q & ml rd eS 3 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Vcr (V) VCE (sat) Ic COLLECTOR-EMITTER SATURATION VOLTAGE VcK (sat) (V) 0.8 Te=100C OL 0.03 COMMON EMITTER Ig /Ip=10 0.01 0.01 01 1 10 100 COLLECTOR CURRENT Ig (A) SAFE OPERATING AREA 100 == [+ --Frt I MAX. (PULSED) > 30 ll Pi < 10fI, MAX. O (CONTINUOUS) 4 7 Lt tiitt e af H i DC OPERATION & Te=25C 5 1 Qo 2 & BE 03 S pL EE PP tt %* SINGLE 8 0.1 NONREPETITIVE . PULSE Te=25C A CURVES MUST BE 0.03] DERATED LINEARLY WITH INCREASE IN t+|Vcro MAX. 714 001 TEMPERATURE. mn 71 3 10 =30 100 300 1000 3000 COLLECTOR-EMITTER VOLTAGE Vcr (V) Ic (A COLLECTOR CURRENT DC CURRENT GAIN hpg 28C5359 Ic - VBE MMON EMITTER CE=5V Tc=100C 0 0.4 0.8 1.2 1.6 2.0 BASE-EMITTER VOLTAGE VpE (V) hrE Ic 300 pe 100C 100 25 30 10 3 COMMON EMITTER Voe=5V 0.01 0.1 1 10 100 COLLECTOR CURRENT Ic (A) 1997-02-03 2/2