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SURMOUNT™ 25µM PIN Diodes
RoHS Compliant
Rev. V5
MADP-017025-1314
MADP-030025-1314
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
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Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Case Style ODS 1314
Absolute Maximum Ratings1 @ TA = +25°C
(unless otherwise specified)
1) Exceeding these limits may cause permanent damage
Chip Dimensions
DIM INCHES MM
Min Max Min Max
A 0.060 0.062 1.525 1.575
B 0.031 0.032 0.775 0.825
C 0.004 0.008 0.102 0.203
D 0.019 0.021 0.475 0.525
E 0.019 0.021 0.475 0.525
F 0.019 0.021 0.475 0.525
G 0.029 0.031 0.725 0.775
Notes:
1) Backside metal: 0.1microns thick.
2) Yellow area with hatch lines indicate backside ohmic gold
contacts.
3) Both devices have same outline dimensions ( A to G).
Features
♦ 0603 Outline
♦ Surface Mount
♦ 25µm I-Region Length Devices
♦ No Wirebonds Required
♦ Silicon Nitride Passivation
♦ Polymer Scratch Protection
♦ Low Parasitic Capacitance and Inductance
♦ High Average and Peak Power Handling
Description
This device is a silicon, glass PIN diode surmount chip
fabricated with M/A-COM’s patented HMICTM process.
This device features two silicon pedestals embedded in a
low loss, low dispersion glass. The diode is formed on the
top of one pedestal and connections to the backside of the
device are facilitated by making the pedestal sidewalls
electrically conductive. Selective backside metallization is
applied producing a surface mount device. This vertical
topology provides for exceptional heat transfer. The
topside is fully encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact protection.
These protective coatings prevent damage to the junction
and the anode air-bridge during handling and assembly.
Applications
These packageless devices are suitable for usage in
moderate incident power, ≤50dBm/C.W. or where the peak
power is ≤75dBm, pulse width is 1µS, and duty cycle is
0.01%. Their low parasitic inductance, 0.4 nH, and
excellent RC constant, make these devices a superior
choice for higher frequency switch elements when
compared to their plastic package counterparts.
Parameter Absolute Maximum
Forward Current 500 mA
Reverse Voltage - 135 V
Operating Temperature -55°C to +125°C
Storage Temperature -55 °C to +150°C
Junction Temperature +175°C
C.W. Incident Power +44dBm MADP-017025
+47dBM MADP-030025
Mounting Temperature +280°C for 30 seconds
Peak Incident Power (dBm) +50 dBm, 10µS, 1% duty