1MBH25-120,1MBH25D-120, Molded IGBT 1200V / 25A Molded Package Features * Small molded package * Low power loss * Soft switching with low switching surge and noise * High reliability, high ruggedness (RBSOA, SCSOA etc.) * Comprehensive line-up Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply Equivalent Circuit Schematic Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) 1MBH25-120 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque IGBT Symbol VCES VGES IC25 IC100 Icp PC Tj Tstg - Rating 1200 20 38 25 114 310 +150 -40 to +150 70 Unit V V A A A W C C N*cm C:Collector G:Gate E:Emitter 1MBH25D-120 / IGBT+FWD Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg - Rating 1200 20 38 25 114 310 145 +150 -40 to +150 70 Unit V V A A A W W C C N*cm IGBT + FWD C:Collector G:Gate E:Emitter Molded IGBT 1MBH25-120, 1MBH25D-120 Electrical characteristics (at Tj=25C unless otherwise specified) 1MBH25-120 / IGBT Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Turn-off time - - 5.5 - - - - - - - - - - - - 2500 500 200 - - - - Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=25mA VGE=15V, IC=25A VGE=0V VCE=10V f=1MHz VCC=600V IC=25A VGE=15V RG=82 ohm (Half Bridge) mA A V V pF Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=25mA VGE=15V, IC=25A VGE=0V V CE=10V f=1MHz VCC=600V, IC=25A VGE=15V RG=82 ohm (Half Bridge) IF=25A, VGE=0V IF=25A, VGE=-10V, di/dt=100A/s mA A V V pF Max. 1.0 20 8.5 3.5 - - - 1.2 0.6 1.5 0.5 s 1MBH25D-120 / IGBT+FWD Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES IGES - - 5.5 - - - - - - - - - - VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Turn-off time FWD forward on voltage Reverse recovery time - - - - 2500 500 200 - - - - - - Max. 1.0 20 8.5 3.5 - - - 1.2 0.6 1.5 0.5 3.0 0.35 s V s Thermal resistance characteristics 1MBH25-120 / IGBT Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. - - Conditions Unit Max. 0.40 IGBT C/W 1MBH25D-120 / IGBT+FWD Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Outline drawings, mm 1MBH25-120, 1MBH25D-120 TO-3PL Characteristics Min. Typ. - - - - Conditions Unit Max. 0.40 0.86 IGBT FWD C/W C/W 1MBH25-120, 1MBH25D-120 Molded IGBT Characteristics 1MBH25-120,1MBH25D-120 Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage Tj=125C 50 50 40 40 Collector current : Ic [A] Collector current : Ic [A] Tj=25C 30 20 10 30 20 10 0 0 0 1 2 3 4 5 0 Collector-Emitter voltage : VCE [V] 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 10 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 2 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C 8 6 4 2 0 8 6 4 2 0 0 5 10 15 20 0 Gate-Emitter voltage : VGE [V] 5 10 15 20 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=82 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=600V, RG=82 ohm, VGE=15V, Tj=125C Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 1 100 10 1000 100 10 0 10 20 Collector current : Ic [A] 30 40 0 10 20 Collector current : Ic [A] 30 40 IGBT Module 1MBH25-120, 1MBH25D-120 Characteristics 1MBH25-120,1MBH25D-120 10000 10000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. RG Vcc=600V, Ic=25A, VGE=15V, Tj=125C Switching time vs. RG Vcc=600V, Ic=25A, VGE=15V, Tj=25C 1000 1000 100 100 100 100 Gate resistance : RG [ohm] Gate resistance : RG [ohm] Capacitance vs. Collector-Emitter voltage Tj=25C Dynamic input characteristics Tj=25C 10000 800 20 600 15 400 10 200 5 0 Capacitance : Cies, Coes, Cres [nF] 25 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] 1000 50 100 150 200 250 Gate charge : Qg [nC] 300 350 100 10 0 0 1000 0 400 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 Typical short circuit capability Vcc=800V, RG=82 ohm, Tj=125C Reversed biased safe operating area < > 82 ohm +VGE=15V, -VGE = 15V, Tj < = 125C, RG = 600 60 500 50 400 40 300 30 200 20 100 10 Collector current : Ic [A] 40 30 20 10 0 0 0 0 200 400 600 800 Collector-Emitter voltage : VCE [V] 1000 1200 5 10 15 Gate voltage : VGE [V] 20 25 Short circuit time : tsc [s] Short circuit time current : Isc [A] 50 1MBH25-120, 1MBH25D-120 IGBT Module Characteristics 1MBH25-120,1MBH25D-120 Thermal resistance : Rth (j-c) [C/W] Transient thermal resistance 101 100 10-1 10-2 10-4 10-3 10-2 10-1 100 Pulse width : PW [sec.] 1MBH25D-120 Reverse recovery time vs. Forward current Reverse recovery current vs. Forward current -di/dt=75A / sec 800 20 600 15 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] -di/dt=75A / sec 400 200 10 5 0 0 0 10 20 30 40 0 10 Forward current : IF [A] 20 30 40 Forward current : IF [A] Reverse recovery time characteristics vs. -di/dt IF=25A, Tj=125C Forward current vs. Foeward voltage 1000 25 800 20 600 15 400 10 200 5 50 Forward current : IF [A] 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Forward voltage : VF [V] 3.5 4.0 4.5 0 0 0 50 100 150 -di/dt 200 [ A / sec ] 250 300 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] 40