2005-09-06
Rev.1.1 Page 1
BSO4804
OptiMOS
=
==
=Small-Signal-Transistor Product Summary
VDS 30 V
RDS
(
on
)
20 m
ID8 A
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x RDS
(
on
)
product (FOM)
150°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching applications
Type Package Ordering Code
BSO4804 PG-DSO-8-7 Q67042-S4097 Marking
4804
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
8
6.4
A
Pulsed drain current
TA=25°C
ID puls 32
Avalanche energy, single pulse
ID=8 A , VDD=25V, RGS=25
EAS 90 mJ
Reverse diode dv/dt
IS=8A, VDS=24V, di/dt=200A/µs, Tjmax=150°C
dv/dt6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TA=25°C
Ptot 2 W
Operating and storage temperature T
j
, Tst
g
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Pb-free lead plating; RoHS compliant
•
2005-09-06
Rev.1.1 Page 2
BSO4804
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 45 K/W
SMD version, device on PCB:
@ min. footprint; t
10 sec.
@ 6 cm2 cooling area 1); t
10 sec.
RthJA
-
-
-
-
110
62.5
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS 30 - - V
Gate threshold voltage, VGS = VDS
ID=30µA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
IDSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS - 1 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=6.7A
RDS(on) - 23.8 28.2 m
Drain-source on-state resistance
VGS=10V, ID=8A
RDS(on) - 17.4 20
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2005-09-06
Rev.1.1 Page 3
BSO4804
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS
2*ID*RDS(on)max ,
ID=6.4A
8.5 17 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 700 870 pF
Output capacitance Coss - 300 370
Reverse transfer capacitance Crss - 74 110
Gate resistance RG- 1.1 -
Turn-on delay time td(on) VDD=15V, VGS=4.5V,
ID=6.7A, RG=9.1
- 9.1 14 ns
Rise time tr- 27 40
Turn-off delay time td(off) - 18 27
Fall time tf- 24 36
Gate Charge Characteristics
Gate to source charge Qgs VDD=15V, ID=8A - 1.9 2.4 nC
Gate to drain charge Qgd - 5.8 8.7
Gate charge total QgVDD=15V, ID=8A,
VGS=0 to 5V
- 13.5 17
Output charge Qoss VDS=15V, ID=8A,
VGS=0V
- 10.3 13
Gate plateau voltage V
(p
lateau
)
VDD=15V, ID=8A - 2.8 - V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - 1.8 A
Inverse diode direct current,
pulsed ISM - - 32
Inverse diode forward voltage VSD VGS=0V, IF=1.8A - 0.9 1.3 V
Reverse recovery time trr VR=15V, IF=lS,
diF/dt=100A/µs
- 24 30 ns
Reverse recovery charge Qrr - 16 20 nC
2005-09-06
Rev.1.1 Page 4
BSO4804
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
W
2.2 BSO4804
P
tot
2 Drain current
ID = f (TA)
parameter: VGS
10 V
0 20 40 60 80 100 120 °C 160
TA
0
1
2
3
4
5
6
7
A
9 BSO4804
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
10 -1 10 0 10 1 10 2
VVDS
-2
10
-1
10
0
10
1
10
2
10
A
BSO4804
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
tp = 16.0µs
4 Transient thermal impedance
ZthJS = f (tp)
parameter : D = tp/T
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2
s
tp
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSO4804
ZthJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2005-09-06
Rev.1.1 Page 5
BSO4804
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VDS
0
2
4
6
8
10
12
14
16
A
19 BSO4804
ID
VGS [V]
a
a 2.8
b
b 3.0
c
c 3.2
d
d 3.4
e
e 3.6
f
f 3.8
g
g 4.0
h
h 4.5
i
Ptot = 2W
i 10.0
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 2 4 6 8 10 A14
ID
0
5
10
15
20
25
30
35
40
45
50
55
m
65 BSO4804
RDS(on)
VGS [V] =
c
c
3.2
d
d
3.4
e
e
3.6
f
f
3.8
g
g
4.0
h
h
4.5
i
i
10.0
7 Typ. transfer characteristics
ID= f ( VGS ); VDS
2 x ID x RDS(on)max
parameter: tp = 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 V 4.5
VGS
0
5
10
15
20
25
30
A
40
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
0 5 10 15 20 25 30 A 40
ID
0
5
10
15
20
25
S
35
g
fs
2005-09-06
Rev.1.1 Page 6
BSO4804
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 8 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
4
8
12
16
20
24
28
32
36
m
42 BSO4804
RDS(on)
typ
98%
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 30 µA
-60 -20 20 60 100 °C 160
Tj
0
0.5
1
1.5
V
2.5
VGS(th)
typ.
max.
min.
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
BSO4804
I
F
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 5 10 15 20 V 30
VDS
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
2005-09-06
Rev.1.1 Page 7
BSO4804
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 8 A , VDD = 25 V, RGS = 25
25 50 75 100 °C 150
Tj
0
10
20
30
40
50
60
70
mJ
90
EAS
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 8 A pulsed
0 4 8 12 16 20 24 28 32 36nC 42
QGate
0
2
4
6
8
10
12
V
16 BSO4804
V
GS
0.2 VDS max
0.5 VDS max
0.8 VDS max
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60 -20 20 60 100 °C 180
Tj
27
28
29
30
31
32
33
34
V
36 BSO4804
V
(BR)DSS
2005-09-06
Rev.1.1 Page 8
BSO4804
Published by
Infineon Technologies AG,
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St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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