SQD70140EL
www.vishay.com Vishay Siliconix
S16-0555-Rev. A, 28-Mar-16 1Document Number: 78633
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () at VGS = 10 V 0.0150
RDS(on) () at VGS = 4.5 V 0.0190
ID (A) 30
Configuration Single
Package TO-252
TO-252
Top View
TO
G
D
S
Drain connected to tab
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C a ID
30
A
TC = 125 °C 27
Continuous Source Current (Diode Conduction) aIS30
Pulsed Drain Current bIDM 120
Single Pulse Avalanche Current L = 0.1 mH IAS 34
Single Pulse Avalanche Energy EAS 58 mJ
Maximum Power Dissipation bTC = 25 °C PD
71 W
TC = 125 °C 23
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount cRthJA 50 °C/W
Junction-to-Case (Drain) RthJC 2.1
SQD70140EL
www.vishay.com Vishay Siliconix
S16-0555-Rev. A, 28-Mar-16 2Document Number: 78633
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 - 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 100 V - - 1.0
μA VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 100 V, TJ = 175 °C - - 250
On-State Drain Current aID(on) V
GS = 10 V VDS 5 V 30 - - A
Drain-Source On-State Resistance aRDS(on)
VGS = 10 V ID = 30 A - 0.0120 0.0150
VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0255
VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0320
VGS = 4.5 V ID = 20 A - 0.0145 0.0190
Forward Transconductance bgfs VDS = 15 V, ID = 25 A - 58 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 1565 2100
pF Output Capacitance Coss - 800 1100
Reverse Transfer Capacitance Crss -65100
Total Gate Charge cQg
VGS = 10 V VDS = 50 V, ID = 30 A
-26.540
nC Gate-Source Charge cQgs -5.5-
Gate-Drain Charge cQgd -5.5-
Gate Resistance Rgf = 1 MHz 1.1 2.3 3.5
Turn-On Delay Time ctd(on)
VDD = 50 V, RL = 1.67
ID 30 A, VGEN = 10 V, Rg = 1
-715
ns
Rise Time ctr -1930
Turn-Off Delay Time ctd(off) -1830
Fall Time ctf -5995
Source-Drain Diode Ratings and Characteristics b
Pulsed Current aISM --120A
Forward Voltage VSD IF = 30 A, VGS = 0 V - 0.94 1.5 V
SQD70140EL
www.vishay.com Vishay Siliconix
S16-0555-Rev. A, 28-Mar-16 3Document Number: 78633
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
10
100
1000
10000
0
30
60
90
120
150
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 4 V
V
GS
= 3 V
10
100
1000
10000
0
0.3
0.6
0.9
1.2
1.5
012345
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
0.02
0.04
0.06
0.08
0.1
0 20406080100
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 4.5 V
VGS = 10 V
10
100
1000
10000
0
25
50
75
100
125
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
20
40
60
80
100
0 5 10 15 20 25
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
500
1000
1500
2000
2500
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
SQD70140EL
www.vishay.com Vishay Siliconix
S16-0555-Rev. A, 28-Mar-16 4Document Number: 78633
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
10
100
1000
10000
0
2
4
6
8
10
0 6 12 18 24 30
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 30 A
VDS = 50 V
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.3 0.6 0.9 1.2 1.5
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
-1.5
-1.1
-0.7
-0.3
0.1
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 5 mA
ID= 250 µA
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 30 A
VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0.00
0.02
0.04
0.06
0.08
0.10
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
10
100
1000
10000
105
108
111
114
117
120
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
I
D
= 1 mA
SQD70140EL
www.vishay.com Vishay Siliconix
S16-0555-Rev. A, 28-Mar-16 5Document Number: 78633
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
IDlimited
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
P
DM
t
1
t
2
t
1
t
2
Notes:
SQD70140EL
www.vishay.com Vishay Siliconix
S16-0555-Rev. A, 28-Mar-16 6Document Number: 78633
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?78633.
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square W ave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
Package Information
www.vishay.com Vishay Siliconix
Revision: 02-Sep-13 1Document Number: 64424
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-252AA Case Outline
Note
• Dimension L3 is for reference only.
L3
D
L4
L5
bb2
e1
E1
D1
C
A1
gage plane height (0.5 mm)
e
b3
E
C2
A
L
H
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
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Revision: 01-Jan-2021 1Document Number: 91000
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