GLS36VF3203-70-4I-EKE - Greenliant Systems

Data Sheet

www.greenliant.com

32 Mbit (x8/x16) Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FEATURES:

• Organized as 2M x16 or 4M x8

• Dual Bank Architecture for Concurrent

Read/Write Operation

– 32 Mbit Bottom Sector Protection

(in the smaller bank)

- GLS36VF3203: 8 Mbit + 24 Mbit

– 32 Mbit Top Sector Protection

(in the smaller bank)

- GLS36VF3204: 24 Mbit + 8 Mbit

• Single 2.7-3.6V for Read and Write Operations

• Superior Reliability

– Endurance: 100,000 cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 6 mA typical

– Standby Current: 4 µA typical

– Auto Low Power Mode: 4 µA typical

• Hardware Sector Protection/WP# Input Pin

– Protects 8 KWord in the smaller bank by driving

WP# low and unprotects by driving WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading

array data

• Byte# Pin

– Selects 8-bit or 16-bit mode

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Chip-Erase Capability

• Block-Erase Capability

– Uniform 32 KWord blocks

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

– Greenliant: 128 bits

– User: 256 Bytes

• Fast Read Access Time

– 70 ns

• Latched Address and Data

• Fast Erase and Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• Conforms to Common Flash Memory Interface (CFI)

• JEDEC Standards

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-ball TFBGA (6mm x 8mm)

– 48-lead TSOP (12mm x 20mm)

PRODUCT DESCRIPTION

The GLS36VF320x are 2M x16 or 4M x8 CMOS Concur-

rent Read/Write Flash Memory manufactured with high

performance SuperFlash technology. The split-gate cell

design and thick-oxide tunneling injector attain better reli-

ability and manufacturability compared with alternate

approaches. The devices write (Program or Erase) with a

2.7-3.6V power supply and conform to JEDEC standard

pinouts for x8/x16 memories.

Featuring high performance Word-Program, these devices

provide a typical Program time of 7 µsec and use the Tog-

gle Bit, Data# Polling, or RY/BY# to detect the completion

of the Program or Erase operation. To protect against inad-

vertent write, the devices have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of 10,000

cycles. Data retention is rated at greater than 100 years.

These devices are suited for applications that require con-

venient and economical updating of program, configura-

tion, or data memory. For all system applications, the

devices significantly improve performance and reliability,

while lowering power consumption. Since for any given

voltage range, the SuperFlash technology uses less cur-

rent to program and has a shorter erase time, the total

energy consumed during any Erase or Program operation

GLS36VF3201C / 1602C32Mb (x8/x16) Concurrent SuperFlash

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

is less than alternative flash technologies. These devices

also improve flexibility while lowering the cost for program,

data, and configuration storage applications.

SuperFlash technology provides fixed Erase and Program

times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

To meet high-density, surface-mount requirements, these

devices are offered in 48-ball TFBGA and 48-lead TSOP

packages. See Figures 2 and 3 for pin assignments.

Device Operation

Memory operation functions are initiated using standard

microprocessor write sequences. A command is written by

asserting WE# low while keeping CE# low. The address

bus is latched on the falling edge of WE# or CE#, which-

ever occurs last. The data bus is latched on the rising edge

of WE# or CE#, whichever occurs first.

Auto Low Power Mode

These devices also have the Auto Lower Power mode

which puts them in a near standby mode within 500 ns after

data has been accessed with a valid Read operation. This

reduces the IDD active Read current to 4 µA typically. While

CE# is low, the devices exit Auto Low Power mode with

any address transition or control signal transition used to

initiate another Read cycle, with no access time penalty.

Concurrent Read/Write Operation

The dual bank architecture of these devices allows the

Concurrent Read/Write operation whereby the user can

read from one bank while programming or erasing in the

other bank. For example, reading system code in one bank

while updating data in the other bank.

Note: For the purposes of this table, write means to perform Block-

or Sector-Erase or Program operations as applicable to the

appropriate bank.

Read Operation

The Read operation is controlled by CE# and OE#; both

have to be low for the system to obtain data from the out-

puts. CE# is used for device selection. When CE# is high,

the chip is deselected and only standby power is con-

sumed. OE# is the output control and is used to gate data

from the output pins. The data bus is in a high impedance

state when either CE# or OE# is high. Refer to the Read

cycle timing diagram for further details (Figure 4).

Program Operation

These devices are programmed on a word-by-word or

byte-by-byte basis depending on the state of the BYTE#

pin. Before programming, one must ensure that the sector

which is being programmed is fully erased.

The Program operation is accomplished in three steps:

1. Software Data Protection is initiated using the

three-byte load sequence.

2. Address and data are loaded.

During the Program operation, the addresses are

latched on the falling edge of either CE# or WE#,

whichever occurs last. The data is latched on the

rising edge of either CE# or WE#, whichever

occurs first.

3. The internal Program operation is initiated after

the rising edge of the fourth WE# or CE#, which-

Concurrent Read/Write State

Bank 1 Bank 2

Read No Operation

Read Write

Write Read

Write No Operation

No Operation Read

No Operation Write

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

ever occurs first. The Program operation, once ini-

tiated, will be completed typically within 7 µs.

See Figures 5 and 6 for WE# and CE# controlled Program

operation timing diagrams and Figure 20 for flowcharts.

During the Program operation, the only valid reads are

Data# Polling and Toggle Bit. During the internal Program

operation, the host is free to perform additional tasks. Any

commands issued during an internal Program operation

are ignored.

Sector- (Block-) Erase Operation

These devices offer both Sector-Erase and Block-Erase

operations. These operations allow the system to erase the

devices on a sector-by-sector (or block-by-block) basis. The

sector architecture is based on a uniform sector size of 2

KWord. The Block-Erase mode is based on a uniform block

size of 32 KWord. The Sector-Erase operation is initiated by

executing a six-byte command sequence with a Sector-

Erase command (50H) and sector address (SA) in the last

bus cycle. The Block-Erase operation is initiated by execut-

ing a six-byte command sequence with Block-Erase com-

mand (30H) and block address (BA) in the last bus cycle.

The sector or block address is latched on the falling edge of

the sixth WE# pulse, while the command (30H or 50H) is

latched on the rising edge of the sixth WE# pulse. The inter-

nal Erase operation begins after the sixth WE# pulse. Any

commands issued during the Sector- or Block-Erase opera-

tion are ignored except Erase-Suspend and Erase-

Resume. See Figures 10 and 11 for timing waveforms.

Chip-Erase Operation

The devices provide a Chip-Erase operation, which allows

the user to erase all sectors/blocks to the “1” state. This is

useful when a device must be quickly erased.

The Chip-Erase operation is initiated by executing a six-

byte command sequence with Chip-Erase command

(10H) at address 555H in the last byte sequence. The

Erase operation begins with the rising edge of the sixth

WE# or CE#, whichever occurs first. During the Erase

operation, the only valid Read is Toggle Bit or Data# Poll-

ing. Any commands issued during the Chip-Erase opera-

tion are ignored. See Table 7 for the command sequence,

Figure 9 for timing diagram, and Figure 23 for the flowchart.

When WP# is low, any attempt to Chip-Erase will be

ignored.

Erase-Suspend/Erase-Resume Operations

The Erase-Suspend operation temporarily suspends a

Sector- or Block-Erase operation thus allowing data to be

read from any memory location, or program data into any

sector/block that is not suspended for an Erase operation.

The operation is executed by issuing a one-byte command

sequence with Erase-Suspend command (B0H). The

device automatically enters read mode no more than 10 µs

after the Erase-Suspend command had been issued. (TES

maximum latency equals 10 µs.) Valid data can be read

from any sector or block that is not suspended from an

Erase operation. Reading at address location within erase-

suspended sectors/blocks will output DQ2 toggling and

DQ6 at “1”. While in Erase-Suspend mode, a Program

operation is allowed except for the sector or block selected

for Erase-Suspend. The Software ID Entry command can

also be executed. To resume Sector-Erase or Block-Erase

operation which has been suspended, the system must

issue an Erase-Resume command. The operation is exe-

cuted by issuing a one-byte command sequence with

Erase Resume command (30H) at any address in the last

byte sequence.

Write Operation Status Detection

These devices provide one hardware and two software

means to detect the completion of a Write (Program or

Erase) cycle in order to optimize the system Write cycle

time. The hardware detection uses the Ready/Busy# (RY/

BY#) output pin. The software detection includes two sta-

tus bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The

End-of-Write detection mode is enabled after the rising

edge of WE#, which initiates the internal Program or Erase

operation.

The actual completion of the nonvolatile write is asynchro-

nous with the system; therefore, either a Ready/Busy#

(RY/BY#), a Data# Polling (DQ7), or Toggle Bit (DQ6) Read

may be simultaneous with the completion of the Write

cycle. If this occurs, the system may get an erroneous

result, i.e., valid data may appear to conflict with either DQ7

or DQ6. In order to prevent spurious rejection if an errone-

ous result occurs, the software routine should include a

loop to read the accessed location an additional two (2)

times. If both Reads are valid, then the Write cycle has

completed, otherwise the rejection is valid.

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

Ready/Busy# (RY/BY#)

The devices include a Ready/Busy# (RY/BY#) output sig-

nal. RY/BY# is an open drain output pin that indicates

whether an Erase or Program operation is in progress.

Since RY/BY# is an open drain output, it allows several

devices to be tied in parallel to VDD via an external pull-up

resistor. After the rising edge of the final WE# pulse in the

command sequence, the RY/BY# status is valid.

When RY/BY# is actively pulled low, it indicates that an

Erase or Program operation is in progress. When RY/BY#

is high (Ready), the devices may be read or left in standby

mode.

Byte/Word (BYTE#)

The device includes a BYTE# pin to control whether the

device data I/O pins operate x8 or x16. If the BYTE# pin is

at logic “1” (VIH) the device is in x16 data configuration: all

data I/0 pins DQ0-DQ15 are active and controlled by CE#

and OE#.

If the BYTE# pin is at logic “0”, the device is in x8 data con-

figuration: only data I/O pins DQ0-DQ7 are active and con-

trolled by CE# and OE#. The remaining data pins DQ8-

DQ14 are at Hi-Z, while pin DQ15 is used as the address

input A-1 for the Least Significant Bit of the address bus.

Data# Polling (DQ7)

When the devices are in an internal Program operation,

any attempt to read DQ7 will produce the complement of

the true data. Once the Program operation is completed,

DQ7 will produce true data. During internal Erase operation,

any attempt to read DQ7 will produce a ‘0’. Once the inter-

nal Erase operation is completed, DQ7 will produce a ‘1’.

The Data# Polling is valid after the rising edge of fourth

WE# (or CE#) pulse for Program operation. For Sector-,

Block-, or Chip-Erase, the Data# Polling is valid after the ris-

ing edge of sixth WE# (or CE#) pulse. See Figure 7 for

Data# Polling (DQ7) timing diagram and Figure 21 for a

flowchart.

Toggle Bits (DQ6 and DQ2)

During the internal Program or Erase operation, any con-

secutive attempts to read DQ6 will produce alternating “1”s

and “0”s, i.e., toggling between 1 and 0. When the internal

Program or Erase operation is completed, the DQ6 bit will

stop toggling. The device is then ready for the next opera-

tion. The toggle bit is valid after the rising edge of the fourth

WE# (or CE#) pulse for Program operations. For Sector-,

Block-, or Chip-Erase, the toggle bit (DQ6) is valid after the

rising edge of sixth WE# (or CE#) pulse. DQ6 will be set to

“1” if a Read operation is attempted on an Erase-sus-

pended Sector/Block. If Program operation is initiated in a

sector/block not selected in Erase-Suspend mode, DQ6 will

toggle.

An additional Toggle Bit is available on DQ2, which can be

used in conjunction with DQ6 to check whether a particular

sector is being actively erased or erase-suspended. Table

1 shows detailed status bit information. The Toggle Bit

(DQ2) is valid after the rising edge of the last WE# (or CE#)

pulse of a Write operation. See Figure 8 for Toggle Bit tim-

ing diagram and Figure 21 for a flowchart.

Note: DQ7, DQ6, and DQ2 require a valid address when reading

status information. The address must be in the bank where

the operation is in progress in order to read the operation sta-

tus. If the address is pointing to a different bank (not busy),

the device will output array data.

TABLE 1: Write Operation Status

Status DQ7DQ6DQ2RY/BY#

Normal

Operation

Standard

Program

DQ7# Toggle No Toggle 0

Standard

Erase

0 Toggle Toggle 0

Erase-

Suspend

Mode

Read From

Erase

Suspended

Sector/Block

1 1 Toggle 1

Read From

Non-Erase

Suspended

Sector/Block

Data Data Data 1

Program DQ7# Toggle N/A 0

T1.1 1270

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

Data Protection

The devices provide both hardware and software features

to protect nonvolatile data from inadvertent writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or CE# pulse of less than 5

ns will not initiate a Write cycle.

VDD Power Up/Down Detection: The Write operation is

inhibited when VDD is less than 1.5V.

Write Inhibit Mode: Forcing OE# low, CE# high, or WE#

high will inhibit the Write operation. This prevents inadver-

tent writes during power-up or power-down.

Hardware Block Protection

The devices provide hardware block protection which pro-

tects the outermost 8 KWord in the smaller bank. The block

is protected when WP# is held low. When WP# is held low

and a Block-Erase command is issued to the protected

black, the data in the outermost 8 KWord/16 KByte section

will be protected. The rest of the block will be erased. See

Tables 3 and 4 for Block-Protection location.

A user can disable block protection by driving WP# high.

This allows data to be erased or programmed into the pro-

tected sectors. WP# must be held high prior to issuing the

Write command and remain stable until after the entire

Write operation has completed. If WP# is left floating, it is

internally held high via a pull-up resistor, and the Boot Block

is unprotected, enabling Program and Erase operations on

that block.

Hardware Reset (RST#)

The RST# pin provides a hardware method of resetting the

devices to read array data. When the RST# pin is held low

for at least TRP, any in-progress operation will terminate

and return to Read mode (see Figure 17) and all output

pins are set to High-Z. When no internal Program/Erase

operation is in progress, a minimum period of TRHR is

required after RST# is driven high before a valid Read can

take place (see Figure 16).

The Erase operation that has been interrupted needs to be

reinitiated after the device resumes normal operation mode

to ensure data integrity.

Software Data Protection (SDP)

These devices provide the JEDEC standard Software Data

Protection scheme for all data alteration operations, i.e.,

Program and Erase. Any Program operation requires the

inclusion of the three-byte sequence. The three-byte load

sequence is used to initiate the Program operation, provid-

ing optimal protection from inadvertent Write operations,

e.g., during the system power-up or power-down. Any

Erase operation requires the inclusion of the six-byte

sequence. The devices are shipped with the Software Data

Protection permanently enabled. See Table 7 for the spe-

cific software command codes. During SDP command

sequence, invalid commands will abort the device to Read

mode within TRC. The contents of DQ15-DQ8 can be VIL or

VIH, but no other value during any SDP command

sequence.

Common Flash Memory Interface (CFI)

These devices also contain the CFI information to

describe the characteristics of the devices. In order to

enter the CFI Query mode, the system must write the

three-byte sequence, same as the Software ID Entry com-

mand with 98H (CFI Query command) to address

BKX555H in the last byte sequence. In order to enter the

CFI Query mode, the system can also use the one-byte

sequence with BKX55H on Address and 98H on Data Bus.

See Figure 13 for CFI Entry and Read timing diagram.

Once the device enters the CFI Query mode, the system

can read CFI data at the addresses given in Tables 8

through 10. The system must write the CFI Exit command

to return to Read mode from the CFI Query mode.

Security ID

The GLS36VF320x devices offer a 136-word Security ID

space. The Secure ID space is divided into two seg-

ments—one 128-bit factory programmed segment and one

128-word (256-byte) user-programmed segment. The first

segment is programmed and locked at Greenliant with a

unique, 128-bit number. The user segment is left un-pro-

grammed for the customer to program as desired. To pro-

gram the user segment of the Security ID, the user must

use the Security ID Program command. End-of-Write sta-

tus is checked by reading the toggle bits. Data# Polling is

not used for Security ID End-of-Write detection. Once pro-

gramming is complete, the Sec ID should be locked using

the User Sec ID Program Lock-Out. This disables any

future corruption of this space. Note that regardless of

whether or not the Sec ID is locked, neither Sec ID seg-

ment can be erased. The Secure ID space can be queried

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

by executing a three-byte command sequence with Query

Sec ID command (88H) at address 555H in the last byte

sequence. See Figure 15 for timing diagram. To exit this

mode, the Exit Sec ID command should be executed.

Refer to Table 7 for more details.

Product Identification

The Product Identification mode identifies the devices and

manufacturer. For details, see Table 2 for software opera-

tion, Figure 12 for the Software ID Entry and Read timing

diagram and Figure 22 for the Software ID Entry command

sequence flowchart. The addresses A20 and A18 indicate a

bank address. When the addressed bank is switched to

Product Identification mode, it is possible to read another

address from the same bank without issuing a new Soft-

ware ID Entry command. The Software ID Entry command

may be written to an address within a bank that is in Read

Mode or in Erase-Suspend mode. The Software ID Entry

command may not be written while the device is program-

ming or erasing in the other bank.

Note: BKX = Bank Address (A20-A18)

Product Identification Mode

Exit/CFI Mode Exit

In order to return to the standard Read mode, the Software

Product Identification mode must be exited. Exit is accom-

plished by issuing the Software ID Exit command

sequence, which returns the device to the Read mode. This

command may also be used to reset the device to the Read

mode after any inadvertent transient condition that appar-

ently causes the device to behave abnormally, e.g., not

read correctly. Please note that the Software ID Exit/CFI

Exit command is ignored during an internal Program or

Erase operation. See Table 7 for the software command

code, Figure 14 for timing waveform and Figure 22 for a

flowchart.

FIGURE 1: Functional Block Diagram

TABLE 2: Product Identification

Address Data

Manufacturer’s ID BKX0000H 00BFH

Device ID

GLS36VF3203 BKX0001H 7354H

GLS36VF3204 BKX0001H 7353H

T2.1 1270

1270 B01.0

SuperFlash Memory

Bank 1

I/O Buffers

SuperFlash Memory

Bank 2

Memory

Address

DQ15/A-1 - DQ0

CE#

WP#

WE#

OE#

Control

Logic

RST#

BYTE#

RY/BY#

Address

Buffers (8 KWord / 16 KByte

Sector Protection)

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

TABLE 3: GLS36VF3203, 2M x16 CSF Bottom Dual-Bank Memory Organization (1 of 3)

GLS36VF3203 Block Block Size Address Range x8 Address Range x16

Bank 1

BA0 8 KW / 16 KB 000000H–003FFFH 000000H–001FFFH

24 KW / 48 KB 004000H–00FFFFH 002000H–007FFFH

BA1 32 KW / 64 KB 010000H–01FFFFH 008000H–00FFFFH

BA2 32 KW / 64 KB 020000H–02FFFFH 010000H–017FFFH

BA3 32 KW / 64 KB 030000H–03FFFFH 018000H–01FFFFH

BA4 32 KW / 64 KB 040000H–04FFFFH 020000H–027FFFH

BA5 32 KW / 64 KB 050000H–05FFFFH 028000H–02FFFFH

BA6 32 KW / 64 KB 060000H—06FFFFH 030000H–037FFFH

BA7 32 KW / 64 KB 070000H—07FFFFH 038000H–03FFFFH

BA8 32 KW / 64 KB 080000H—08FFFFH 040000H–047FFFH

BA9 32 KW / 64 KB 090000H—09FFFFH 048000H–04FFFFH

BA10 32 KW / 64 KB 0A0000H—0AFFFFH 050000H–057FFFH

BA11 32 KW / 64 KB 0B0000H—0BFFFFH 058000H–05FFFFH

BA12 32 KW / 64 KB 0C0000H—0CFFFFH 060000H–067FFFH

BA13 32 KW / 64 KB 0D0000H—0DFFFFH 068000H–06FFFFH

BA14 32 KW / 64 KB 0E0000H—0EFFFFH 070000H–077FFFH

BA15 32 KW / 64 KB 0F0000H—0FFFFFH 078000H–07FFFFH

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

Bank 2

BA16 32 KW / 64 KB 100000H—10FFFFH 080000H–087FFFH

BA17 32 KW / 64 KB 110000H—11FFFFH 088000H–08FFFFH

BA18 32 KW / 64 KB 120000H—12FFFFH 090000H–097FFFH

BA19 32 KW / 64 KB 130000H—13FFFFH 098000H–09FFFFH

BA20 32 KW / 64 KB 140000H—14FFFFH 0A0000H–0A7FFFH

BA21 32 KW / 64 KB 150000H—15FFFFH 0A8000H–0AFFFFH

BA22 32 KW / 64 KB 160000H—16FFFFH 0B0000H–0B7FFFH

BA23 32 KW / 64 KB 170000H—17FFFFH 0B8000H–0BFFFFH

BA24 32 KW / 64 KB 180000H—18FFFFH 0C0000H–0C7FFFH

BA25 32 KW / 64 KB 190000H—19FFFFH 0C8000H–0CFFFFH

BA26 32 KW / 64 KB 1A0000H—1AFFFFH 0D0000H–0D7FFFH

BA27 32 KW / 64 KB 1B0000H—1BFFFFH 0D8000H–0DFFFFH

BA28 32 KW / 64 KB 1C0000H—1CFFFFH 0E0000H—0E7FFFH

BA29 32 KW / 64 KB 1D0000H—1DFFFFH 0E8000H—0EFFFFH

BA30 32 KW / 64 KB 1E0000H—1EFFFFH 0F0000H—0F7FFFH

BA31 32 KW / 64 KB 1F0000H—1FFFFFH 0F8000H—0FFFFFH

BA32 32 KW / 64 KB 200000H—20FFFFH 100000H—107FFFH

BA33 32 KW / 64 KB 210000H—21FFFFH 108000H—10FFFFH

BA34 32 KW / 64 KB 220000H—22FFFFH 110000H—117FFFH

BA35 32 KW / 64 KB 230000H—23FFFFH 118000H—11FFFFH

BA36 32 KW / 64 KB 240000H—24FFFFH 120000H—127FFFH

BA37 32 KW / 64 KB 250000H—25FFFFH 128000H—12FFFFH

BA38 32 KW / 64 KB 260000H—26FFFFH 130000H—137FFFH

BA39 32 KW / 64 KB 270000H—27FFFFH 138000H—13FFFFH

BA40 32 KW / 64 KB 280000H—28FFFFH 140000H—147FFFH

BA41 32 KW / 64 KB 290000H—29FFFFH 148000H—14FFFFH

TABLE 3: GLS36VF3203, 2M x16 CSF Bottom Dual-Bank Memory Organization (Continued) (2 of 3)

GLS36VF3203 Block Block Size Address Range x8 Address Range x16

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

Bank 2

BA42 32 KW / 64 KB 2A0000H—2AFFFFH 150000H—157FFFH

BA43 32 KW / 64 KB 2B0000H–2BFFFFH 158000H–15FFFFH

BA44 32 KW / 64 KB 2C0000H–2CFFFFH 160000H–167FFFH

BA45 32 KW / 64 KB 2D0000H–2DFFFFH 168000H–16FFFFH

BA46 32 KW / 64 KB 2E0000H–2EFFFFH 170000H–177FFFH

BA47 32 KW / 64 KB 2F0000H–2FFFFFH 178000H–17FFFFH

BA48 32 KW / 64 KB 300000H–30FFFFH 180000H–187FFFH

BA49 32 KW / 64 KB 310000H–31FFFFH 188000H–18FFFFH

BA50 32 KW / 64 KB 320000H–32FFFFH 190000H–197FFFH

BA51 32 KW / 64 KB 330000H–33FFFFH 198000H–19FFFFH

BA52 32 KW / 64 KB 340000H–34FFFFH 1A0000H–1A7FFFH

BA53 32 KW / 64 KB 350000H–35FFFFH 1A8000H–1AFFFFH

BA54 32 KW / 64 KB 360000H–36FFFFH 1B0000H–1B7FFFH

BA55 32 KW / 64 KB 370000H–37FFFFH 1B8000H–1BFFFFH

BA56 32 KW / 64 KB 380000H–38FFFFH 1C0000H–1C7FFFH

BA57 32 KW / 64 KB 390000H–39FFFFH 1C8000H–1CFFFFH

BA58 32 KW / 64 KB 3A0000H–3AFFFFH 1D0000H–1D7FFFH

BA59 32 KW / 64 KB 3B0000H–3BFFFFH 1D8000H–1DFFFFH

BA60 32 KW / 64 KB 3C0000H–3CFFFFH 1E0000H–1E7FFFH

BA61 32 KW / 64 KB 3D0000H–3DFFFFH 1E8000H–1EFFFFH

BA62 32 KW / 64 KB 3E0000H–3EFFFFH 1F0000H–1F7FFFH

BA63 32 KW / 64 KB 3F0000H–3FFFFFH 1F8000H–1FFFFFH

T3.0 1270

TABLE 3: GLS36VF3203, 2M x16 CSF Bottom Dual-Bank Memory Organization (Continued) (3 of 3)

GLS36VF3203 Block Block Size Address Range x8 Address Range x16

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

TABLE 4: GLS36VF3204, 2M x16 CSF Top Dual-Bank Memory Organization (1 of 2)

GLS36VF3204 Block Block Size Address Range x8 Address Range x16

Bank 2

BA0 32 KW / 64 KB 000000H–00FFFFH 000000H–007FFFH

BA1 32 KW / 64 KB 010000H–01FFFFH 008000H–00FFFFH

BA2 32 KW / 64 KB 020000H–02FFFFH 010000H–017FFFH

BA3 32 KW / 64 KB 030000H–03FFFFH 018000H–01FFFFH

BA4 32 KW / 64 KB 040000H–04FFFFH 020000H–027FFFH

BA5 32 KW / 64 KB 050000H–05FFFFH 028000H–02FFFFH

BA6 32 KW / 64 KB 060000H—06FFFFH 030000H–037FFFH

BA7 32 KW / 64 KB 070000H—07FFFFH 038000H–03FFFFH

BA8 32 KW / 64 KB 080000H—08FFFFH 040000H–047FFFH

BA9 32 KW / 64 KB 090000H—09FFFFH 048000H–04FFFFH

BA10 32 KW / 64 KB 0A0000H—0AFFFFH 050000H–057FFFH

BA11 32 KW / 64 KB 0B0000H—0BFFFFH 058000H–05FFFFH

BA12 32 KW / 64 KB 0C0000H—0CFFFFH 060000H–067FFFH

BA13 32 KW / 64 KB 0D0000H—0DFFFFH 068000H–06FFFFH

BA14 32 KW / 64 KB 0E0000H—0EFFFFH 070000H–077FFFH

BA15 32 KW / 64 KB 0F0000H—0FFFFFH 078000H–07FFFFH

BA16 32 KW / 64 KB 100000H—10FFFFH 080000H–087FFFH

BA17 32 KW / 64 KB 110000H—11FFFFH 088000H–08FFFFH

BA18 32 KW / 64 KB 120000H—12FFFFH 090000H–097FFFH

BA19 32 KW / 64 KB 130000H—13FFFFH 098000H–09FFFFH

BA20 32 KW / 64 KB 140000H—14FFFFH 0A0000H–0A7FFFH

BA21 32 KW / 64 KB 150000H—15FFFFH 0A8000H–0AFFFFH

BA22 32 KW / 64 KB 160000H—16FFFFH 0B0000H–0B7FFFH

BA23 32 KW / 64 KB 170000H—17FFFFH 0B8000H–0BFFFFH

BA24 32 KW / 64 KB 180000H—18FFFFH 0C0000H–0C7FFFH

BA25 32 KW / 64 KB 190000H—19FFFFH 0C8000H–0CFFFFH

BA26 32 KW / 64 KB 1A0000H—1AFFFFH 0D0000H–0D7FFFH

BA27 32 KW / 64 KB 1B0000H—1BFFFFH 0D8000H–0DFFFFH

BA28 32 KW / 64 KB 1C0000H—1CFFFFH 0E0000H–0E7FFFH

BA29 32 KW / 64 KB 1D0000H—1DFFFFH 0E8000H–0EFFFFH

BA30 32 KW / 64 KB 1E0000H—1EFFFFH 0F0000H–0F7FFFH

BA31 32 KW / 64 KB 1F0000H—1FFFFFH 0F8000H–0FFFFFH

BA32 32 KW / 64 KB 200000H—20FFFFH 100000H–107FFFH

BA33 32 KW / 64 KB 210000H—21FFFFH 108000H–10FFFFH

BA34 32 KW / 64 KB 220000H—22FFFFH 110000H–117FFFH

BA35 32 KW / 64 KB 230000H—23FFFFH 118000H–11FFFFH

BA36 32 KW / 64 KB 240000H—24FFFFH 120000H–127FFFH

BA37 32 KW / 64 KB 250000H—25FFFFH 128000H–12FFFFH

BA38 32 KW / 64 KB 260000H—26FFFFH 130000H–137FFFH

BA39 32 KW / 64 KB 270000H—27FFFFH 138000H–13FFFFH

BA40 32 KW / 64 KB 280000H—28FFFFH 140000H–147FFFH

BA41 32 KW / 64 KB 290000H—29FFFFH 148000H–14FFFFH

BA42 32 KW / 64 KB 2A0000H—2AFFFFH 150000H–157FFFH

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

Bank 2

BA43 32 KW / 64 KB 2B0000H–2BFFFFH 158000H–15FFFFH

BA44 32 KW / 64 KB 2C0000H–2CFFFFH 160000H–167FFFH

BA45 32 KW / 64 KB 2D0000H–2DFFFFH 168000H–16FFFFH

BA46 32 KW / 64 KB 2E0000H–2EFFFFH 170000H–177FFFH

BA47 32 KW / 64 KB 2F0000H–2FFFFFH 178000H–17FFFFH

Bank 1

BA48 32 KW / 64 KB 300000H–30FFFFH 180000H–187FFFH

BA49 32 KW / 64 KB 310000H–31FFFFH 188000H–18FFFFH

BA50 32 KW / 64 KB 320000H–32FFFFH 190000H–197FFFH

BA51 32 KW / 64 KB 330000H–33FFFFH 198000H–19FFFFH

BA52 32 KW / 64 KB 340000H–34FFFFH 1A0000H–1A7FFFH

BA53 32 KW / 64 KB 350000H–35FFFFH 1A8000H–1AFFFFH

BA54 32 KW / 64 KB 360000H–36FFFFH 1B0000H–1B7FFFH

BA55 32 KW / 64 KB 370000H–37FFFFH 1B8000H–1BFFFFH

BA56 32 KW / 64 KB 380000H–38FFFFH 1C0000H–1C7FFFH

BA57 32 KW / 64 KB 390000H–39FFFFH 1C8000H–1CFFFFH

BA58 32 KW / 64 KB 3A0000H–3AFFFFH 1D0000H–1D7FFFH

BA59 32 KW / 64 KB 3B0000H–3BFFFFH 1D8000H–1DFFFFH

BA60 32 KW / 64 KB 3C0000H–3CFFFFH 1E0000H–1E7FFFH

BA61 32 KW / 64 KB 3D0000H–3DFFFFH 1E8000H–1EFFFFH

BA62 32 KW / 64 KB 3E0000H–3EFFFFH 1F0000H–1F7FFFH

BA63 24 KW / 48 KB 3F0000H–3FBFFFH 1F8000H–1FDFFFH

8 KW / 16 KB 3FC000H–3FFFFFH 1FE000H–1FFFFFH

T4.0 1270

TABLE 4: GLS36VF3204, 2M x16 CSF Top Dual-Bank Memory Organization (Continued) (2 of 2)

GLS36VF3204 Block Block Size Address Range x8 Address Range x16

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 2: Pin Assignments for 48-ball TFBGA (6mm x 8mm)

FIGURE 3: Pin Assignments for 48-lead TSOP (12mm x 20mm)

A13

WE#

RY/BY#

A12

RST#

WP#

A17

A14

A10

A18

A15

A11

A19

A20

A16

DQ7

DQ5

DQ2

DQ0

BYTE#

DQ14

DQ12

DQ10

DQ8

CE#

NOTE*

DQ13

VDD

DQ11

DQ9

OE#

VSS

DQ6

DQ4

DQ3

DQ1

VSS

1270 48-tfbga P1.0

TOP VIEW (balls facing down)

A B C D E F G H

Note* = DQ15/A-1

1270 48-tsop P02.0

Standard Pinout

Top View

Die Up

A15

A14

A13

A12

A11

A10

A19

A20

WE#

RST#

WP#

RY/BY#

A18

A17

A16

BYTE#

VSS

DQ15/A

-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VDD

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

VSS

CE#

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

TABLE 5: Pin Description

Symbol Name Functions

A20-A0Address Inputs To provide memory addresses. During Sector-Erase and Hardware Sector Protection,

A20-A11 address lines will select the sector. During Block-Erase A20-A15 address

lines will select the block.

DQ14-DQ0Data Input/Output To output data during Read cycles and receive input data during Write cycles

Data is internally latched during a Write cycle. The outputs are in tri-state when

OE# or CE# is high.

DQ15/A-1 Data Input/Output

and LBS Address

DQ15 is used as data I/O pin when in x16 mode (BYTE# = “1”)

A-1 is used as the LSB address pin when in x8 mode (BYTE# = “0”)

CE# Chip Enable To activate the device when CE# is low.

OE# Output Enable To gate the data output buffers

WE# Write Enable To control the Write operations

RST# Hardware Reset To reset and return the device to Read mode

RY/BY# Ready/Busy# To output the status of a Program or Erase operation

RY/BY# is a open drain output, so a 10K - 100K pull-up resistor is required

to allow RY/BY# to transition high indicating the device is ready to read.

WP# Write Protect To protect and unprotect top or bottom 8 KWord (4 outermost sectors) from Erase or

Program operation.

BYTE# Word/Byte Configuration To select 8-bit or 16-bit mode.

VDD Power Supply To provide 2.7-3.6V power supply voltage

VSS Ground

NC No Connection Unconnected pins

T5.0 1270

TABLE 6: Operation Modes Selection

Mode CE# OE# WE# RST# DQ7-DQ0

DQ15-DQ8

AddressBYTE# = VIH BYTE# = VIL

Read VIL VIL VIH VIH DOUT DOUT DQ14-DQ8 = High Z AIN

Program VIL VIH VIL VIH DIN DIN DQ15 = A-1 AIN

Erase VIL VIH VIL VIH X1

1. X can be VIL or VIH, but no other value.

X High Z Sector or Block

address,

555H for

Chip-Erase

Standby VIHC XX V

IHC High Z High Z High Z X

Write Inhibit X VIL XV

IH High Z / DOUT High Z / DOUT High Z X

XXV

IH VIH High Z / DOUT High Z / DOUT High Z X

Product

Identification

Software

Mode

VIL VIL VIH VIH Manufacturer’s ID

(BFH)

Manufacturer’s ID

(00H)

High Z See Table 7

Device ID2

2. Device ID = GLS36VF3203 = 7354H, GLS36VF3204 = 7353H

Device ID2High Z

Reset X X X VIL High Z High Z High Z X

T6.1 1270

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

TABLE 7: Software Command Sequence

Command

Sequence

1st Bus

Write Cycle

2nd Bus

Write Cycle

3rd Bus

Write Cycle

4th Bus

Write Cycle

5th Bus

Write Cycle

6th Bus

Write Cycle

Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2

Word-Program 555H AAH 2AAH 55H 555H A0H WA3Data

Sector-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SAX450H

Block-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H BAX430H

Chip-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H

Erase-Suspend XXXH B0H

Erase-Resume XXXH 30H

Query Sec ID5555H AAH 2AAH 55H 555H 88H

User Security ID

Word-Program

555H AAH 2AAH 55H 555H A5H SIWA6Data

User Security ID

Program Lock-out7

555H AAH 2AAH 55H 555H 85H XXXH 0000H

Software ID Entry8,9 555H AAH 2AAH 55H BKX4

555H

90H

CFI Query Entry9555H AAH 2AAH 55H BKX4

555H

98H

CFI Query Entry9BKX4

55H

98H

Software ID Exit/

CFI Exit/

Sec ID Exit10,11

555H AAH 2AAH 55H 555H F0H

Software ID Exit/

CFI Exit/

Sec ID Exit10,11

XXH F0H

T7.1 1270

1. Address format A10-A0 (Hex), Addresses A20-A11 can be VIL or VIH, but no other value (unless otherwise stated), for the command

sequence when in x16 mode.

When in x8 mode, Addresses A20-A12, Address A-1, and DQ14-DQ8 can be VIL or VIH, but no other value (unless otherwise stated), for

the command sequence.

2. DQ15-DQ8 can be VIL or VIH, but no other value, for the command sequence

3. WA = Program word address

4. SAX for Sector-Erase; uses A20-A11 address lines

BAX for Block-Erase; uses A20-A15 address lines

BKX for Bank Address; uses A20-A18 address lines

5. For GLS36VF3203 the Security ID Address Range is: (x16 mode) = 100000H to 100087H,(x8 mode) = 100000H to 10010FH

Greenliant ID is read at Address Range(x16 mode) = 100000H to 100007H (x8 mode) = 100000H to 10000FH

User ID is read at Address Range(x16 mode) = 100008H to 100087H (x8 mode) = 100010H to 10010FH

Lock status is read at Address 1000FFH (x16) or 1001FFH (x8). Unlocked: DQ3 = 1 / Locked: DQ3 = 0.

For GLS36VF3204 the Security ID Address Range is:(x16 mode) = 000000H to 000087H, (x8 mode) = 000000H to 00010FH

Greenliant ID is read at Address Range (x16 mode) = 000000H to 000007H (x8 mode) = 000000H to 00000FH

User ID is read at Address Range (x16 mode) = 000008H to 000087H (x8 mode) = 000010H to 00010FH

Lock Status is read at Address 0000FFH (x16) or 0001FFH (x8). Unlocked: DQ3 = 1 / Locked: DQ3 = 0

6. SIWA = Valid Word addresses for user Sec ID

For GLS36VF3203 User ID valid Address Range is (x16 mode) = 100008H-100087H (x8 mode) = 100010H-10010FH.

For GLS36VF3204 User ID valid Address Range is (x16 mode) = 000008H-000087H (x8 mode) = 000010H-00010FH.

All 4 cycles of User Security ID Program and Program Lock-out must be completed before going back to Read-Array mode.

7. The User Security ID Program Lock-out command must be executed in x16 mode (BYTE#=VIH).

8. The device does not remain in Software Product Identification mode if powered down.

9. A20, A19, and A18 = BKX (Bank Address): address of the bank that is switched to Software ID/CFI Mode

With A17-A1 = 0;Greenliant Manufacturer’s ID = 00BFH, is read with A0 = 0

GLS36VF3203 Device ID = 7354H, is read with A0 = 1

GLS36VF3204 Device ID = 7353H, is read with A0 = 1

10. Both Software ID Exit operations are equivalent

11. If users never lock after programming, User Sec ID can be programmed over the previously unprogrammed bits (data=1) using the

User Sec ID mode again (the programmed “0” bits cannot be reversed to “1”).

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

TABLE 8: CFI Query Identification String1

Address

x16 Mode

Address

x8 Mode Data2Description

10H 20H 0051H Query Unique ASCII string “QRY”

11H 22H 0052H

12H 24H 0059H

13H 26H 0002H Primary OEM command set

14H 28H 0000H

15H 2AH 0000H Address for Primary Extended Table

16H 2CH 0000H

17H 2EH 0000H Alternate OEM command set (00H = none exists)

18H 30H 0000H

19H 32H 0000H Address for Alternate OEM extended Table (00H = none exits)

1AH 34H 0000H

T8.1 1270

1. Refer to CFI publication 100 for more details.

2. In x8 mode, only the lower byte of data is output.

TABLE 9: System Interface Information

Address

x16 Mode

Address

x8 Mode Data1

1. In x8 mode, only the lower byte of data is output.

Description

1BH 36H 0027H VDD Min (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1CH 38H 0036H VDD Max (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1DH 3AH 0000H VPP min (00H = no VPP pin)

1EH 3CH 0000H VPP max (00H = no VPP pin)

1FH 3EH 0004H Typical time out for Program 2N µs (24 = 16 µs)

20H 40H 0000H Typical time out for min size buffer program 2N µs (00H = not supported)

21H 42H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)

22H 44H 0006H Typical time out for Chip-Erase 2N ms (26 = 64 ms)

23H 46H 0001H Maximum time out for Program 2N times typical (21 x 24 = 32 µs)

24H 48H 0000H Maximum time out for buffer program 2N times typical

25H 4AH 0001H Maximum time out for individual Sector-/Block-Erase 2N times typical (21 x 24 = 32 ms)

26H 4CH 0001H Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms)

T9.0 1270

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

TABLE 10: Device Geometry Information

Address

x16 Mode

Address

x8 Mode Data1Description

27H 4EH 0016H Device size = 2N Bytes (16H = 22; 222 = 4 MByte)

28H 50H 0002H Flash Device Interface description; 0002H = x8/x16 asynchronous interface

29H 52H 0000H

2AH 54H 0000H Maximum number of bytes in multi-byte write = 2N (00H = not supported)

2BH 56H 0000H

2CH 58H 0002H Number of Erase Sector/Block sizes supported by device

2DH 5AH 003FH Block Information (y + 1 = Number of blocks; z x 256B = block size)

2EH 5CH 0000H y = 63 + 1 = 64 blocks (003FH = 63)

2FH 5EH 0000H

30H 60H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)

31H 62H 00FFH Sector Information (y + 1 = Number of sectors; z x 256B = sector size)

32H 64H 0003H y = 1023 + 1 = 1024 sectors (03FFH = 1023)

33H 66H 0010H

34H 68H 0000H z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)

T10.2 1270

1. In x8 mode, only the lower byte of data is output.

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Output Short Circuit Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Operating Range

Range Ambient Temp VDD

Extended -20°C to +85°C 2.7-3.6V

Industrial -40°C to +85°C 2.7-3.6V

AC Conditions of Test

Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns

Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF

See Figures 18 and 19

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

TABLE 11: DC Operating Characteristics VDD = 2.7-3.6V

Symbol Parameter

Limits

Test ConditionsFreq Min Max Units

IDD1Active VDD Current

Read 5 MHz 15 mA CE#=VIL, WE#=OE#=VIH

1 MHz 4 mA

Program and Erase 30 mA CE#=WE#=VIL, OE#=VIH

Concurrent Read/Write 5 MHz 45 mA CE#=VIL, OE#=VIH

1 MHz 35 mA

ISB Standby VDD Current 20 µA CE#, RST#=VDD±0.3V

IALP Auto Low Power VDD Current 20 µA CE#=0.1V, VDD=VDD Max

WE#=VDD-0.1V

Address inputs=0.1V or VDD-0.1V

IRT Reset VDD Current 20 µA RST#=GND

ILI Input Leakage Current 1 µA VIN =GND to VDD, VDD=VDD Max

ILIW Input Leakage Current

on WP# pin and RST# pin

10 µA WP#=GND to VDD, VDD=VDD Max

RST#=GND to VDD, VDD=VDD Max

ILO Output Leakage Current 1 µA VOUT =GND to VDD, VDD=VDD Max

VIL Input Low Voltage 0.8 V VDD=VDD Min

VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max

VIH Input High Voltage 0.7 VDD VDD+0.3 V VDD=VDD Max

VIHC Input High Voltage (CMOS) VDD-0.3 VDD+0.3 V VDD=VDD Max

VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min

VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min

T11.1 1270

1. Address input = VILT/VIHT, VDD=VDD Max (See Figure 18)

TABLE 12: Recommended System Power-up Timings

Symbol Parameter Minimum Units

TPU-READ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Power-up to Read Operation 100 µs

TPU-WRITE1Power-up to Write Operation 100 µs

T12.0 1270

TABLE 13: Capacitance (TA = 25°C, f=1 Mhz, other pins open)

Parameter Description Test Condition Maximum

CI/O1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

I/O Pin Capacitance VI/O = 0V 10 pF

CIN1Input Capacitance VIN = 0V 10 pF

T13.0 1270

TABLE 14: Reliability Characteristics

Symbol Parameter Minimum Specification Units Test Method

NEND1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Endurance 10,000 Cycles JEDEC Standard A117

TDR1Data Retention 100 Years JEDEC Standard A103

ILTH1Latch Up 100 + IDD mA JEDEC Standard 78

T14.0 1270

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

AC CHARACTERISTICS

TABLE 15: Read Cycle Timing Parameters VDD = 2.7-3.6V

Symbol Parameter Min Max Units

TRC Read Cycle Time 70 ns

TCE Chip Enable Access Time 70 ns

TAA Address Access Time 70 ns

TOE Output Enable Access Time 35 ns

TCLZ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output 0 ns

TOLZ1OE# Low to Active Output 0 ns

TCHZ1CE# High to High-Z Output 16 ns

TOHZ1OE# High to High-Z Output 16 ns

TOH1Output Hold from Address Change 0 ns

TRP1RST# Pulse Width 500 ns

TRHR1RST# High before Read 50 ns

TRY1,2

2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.

This parameter does not apply to Chip-Erase operations.

RST# Pin Low to Read Mode 20 µs

T15.1 1270

TABLE 16: Program/Erase Cycle Timing Parameters

Symbol Parameter Min Max Units

TBP Program Time 10 µs

TAS Address Setup Time 0 ns

TAH Address Hold Time 40 ns

TCS WE# and CE# Setup Time 0 ns

TCH WE# and CE# Hold Time 0 ns

TOES OE# High Setup Time 0 ns

TOEH OE# High Hold Time 10 ns

TCP CE# Pulse Width 40 ns

TWP WE# Pulse Width 40 ns

TWPH1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

WE# Pulse Width High 30 ns

TCPH1CE# Pulse Width High 30 ns

TDS Data Setup Time 30 ns

TDH1Data Hold Time 0 ns

TIDA1Software ID Access and Exit Time 150 ns

TSE Sector-Erase 25 ms

TBE Block-Erase 25 ms

TSCE Chip-Erase 50 ms

TES Erase-Suspend Latency 10 µs

TBY1,2

2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.

This parameter does not apply to Chip-Erase operations.

RY/BY# Delay Time 90 ns

TBR1Bus Recovery Time 0µs

T16.1 1270

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 4: Read Cycle Timing Diagram

FIGURE 5: WE# Controlled Program Cycle Timing Diagram

1270 F03.0

ADDRESSES

15-0

WE#

OE#

CE#

OLZ

HIGH-Z

CLZ

CHZ

HIGH-Z

D ATA VALIDD ATA VALID

OHZ

1270 F04.0

ADDRESSES

DQ15-0

TDH

TWPH

TDS

TWP

TAH

TAS

TCH

TCS

CE#

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

WORD

(ADDR/DATA)

OE#

WE#

RY/BY#

TBY TBR

Note: X can be VIL or VIH, but no other value.

VALID

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 6: CE# Controlled Program Cycle Timing Diagram

FIGURE 7: Data# Polling Timing Diagram

1270 F05.0

ADDRESSES

DQ15-0

TDH

TCPH

TDS

TCP

TAH

TAS

TCH

TCS

WE#

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

WORD

(ADDR/DATA)

OE#

CE#

TBP

RY/BY#

TBY TBR

Note: X can be VIL or VIH, but no other value.

VALID

1270 F06.0

ADDRESS

DQ7DATA DATA# DATA# DATA

WE#

OE#

CE#

TOEH

TOE

TCE

TOES

RY/BY#

TBY

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 8: Toggle Bit Timing Diagram

FIGURE 9: WE# Controlled Chip-Erase Timing Diagram

1270 F07.0

ADDRESSES

DQ6

WE#

OE#

CE#

TOE

TOEH

TCE

TWO READ CYCLES

WITH SAME OUTPUTS

VALID DATA

TBR

1270 F08.0

ADDRESSES

15-0

WE#

555 2AA 2AA555 555

XX55 XX10XX55XXAA XX80 XXAA

555

OE#

CE#

SIX-BYTE CODE FOR CHIP-ERASE

SCE

Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals

are interchageable as long as minimum timings are met. (See Table 16)

X can be V

or V

, but no other value.

RY/BY#

VALID

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 10: WE# Controlled Block-Erase Timing Diagram

FIGURE 11: WE# Controlled Sector-Erase Timing Diagram

1270 F09.0

ADDRESSES

DQ15-0

WE#

555 2AA 2AA555 555

XX55 XX30XX55XXAA XX80 XXAA

BAX

OE#

CE#

SIX-BYTE CODE FOR BLOCK-ERASE TBE

TWP

Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE#

signals are interchageable as long as minimum timings are met. (See Table 16)

BAX = Block Address

X can be VIL or VIH, but no other value.

RY/BY#

VALID

TBY TBR

1270 F10

DDRESSES

15-0

WE#

555 2AA 2AA555 555

XX55 XX50XX55XXAA XX80 XXAA

OE#

CE#

SIX-BYTE CODE FOR SECTOR-ERASE

Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE#

signals are interchageable as long as minimum timings are met. (See Table 16)

SAX = Sector Address

X can be VIL or VIH, but no other value.

RY/BY# T

VALID

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 12: Software ID Entry and Read

FIGURE 13: CFI Entry and Read

1270 F11

DDRESSES

TIDA

DQ15-0

WE#

Device ID = 7354H for G L S36V F 3203 a nd 7353H for G L S36V F3204

Note: X can be VIL or VIH, but no other value.

555 2AA 555 0000 0001

OE#

CE#

THREE-BYTE SEQUENCE FOR

SOFTWARE ID ENTRY

TWP

TWPH TAA

00BF Device ID

XX55XXAA XX90

1270 F12.0

ADDRESSES

TIDA

DQ15-0

WE#

555 2AA 555

OE#

CE#

THREE-BYTE SEQUENCE FOR

CFI QUERY ENTRY

TWP

TWPH TAA

XX55XXAA XX98

Note: X can be VIL or VIH, but no other value.

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 14: Software ID Exit/CFI Exit

FIGURE 15: Sec ID Entry

1270 F13.

DDRESSES

DQ15-0

TIDA

TWP

TWPH

WE#

555 2AA 555

THREE-BYTE SEQUENCE FOR

SOFTWARE ID EXIT AND RESET

OE#

CE#

XXAA XX55 XXF0

Note: X can be VIL or VIH, but no other value.

1270 F14.

ADDRESS AMS-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

555 2AA 555

OE#

CE#

THREE-BYTE SEQUENCE FOR

CFI QUERY ENTRY

TWP

TWPH TAA

XX55XXAA XX88

Note: AMS = Most signi cant address

MS = A20 for GL S39V F 3203/3204

WP # mus t be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command s equence

X can be VIL or VIH, but no other value.

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 16: RST# Timing Diagram (When no internal operation is in progress)

FIGURE 17: RST# Timing Diagram (During Sector- or Block-Erase operation)

1270 F15.0

RY/BY#

RST#

CE#/OE#

TRP

TRHR

1270 F16.0

Y/BY#

CE#

OE#

TRP

TBR

RST#

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 18: AC Input/Output Reference Waveforms

FIGURE 19: A Test Load Example

1270 F17.0

REFERENCE POINTS OUTPUTINPUT VIT

VIHT

VILT

VOT

AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points

for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10%  90%) are <5 ns.

Note: VIT - VINPUT Te s t

VOT - VOUTPUT Tes t

VIHT - VINPUT HIGH Test

VILT - VINPUT LOW Test

1270 F18.0

T O TESTER

O DUT

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 20: Word-Program Algorithm

1270 F19

Start

Load data: XXAAH

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XXA0H

Address: 555H

Load

Address/Data

Wait for end of

Program (TBP,

Data# Polling

bit, or Toggle bit

operation)

Program

Completed

ote: X can be VIL or VIH, but no other valu

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 21: Wait Options

1270 F20.0

W ait TBP,

TSCE, TSE

or TBE

Program/Erase

Initiated

Internal Timer Toggle Bit

Yes

Program/Erase

Completed

Does DQ6

match?

Read same

byte/word

Data# Polling

Program/Erase

Completed

Program/Erase

Completed

Read

byte/word

Is DQ7 =

true data?

Read DQ7

Program/Erase

Initiated

Program/Erase

Initiated

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 22: Software Product ID/CFI/Sec ID Entry Command Flowcharts

1270 F20.0

Load data: XXAAH

Address: 555H

oftware Product ID Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX90H

Address: 555H

W ait TIDA

Read Software ID

Load data: XXAAH

Address: 555H

CFI Query Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX98H

Address: 555H

W ait TIDA

Read CFI data

Load data: XXAAH

Address: 555H

Software ID Exit/

CFI Exit/Sec ID

Command Sequenc

Load data: XX55H

Address: 2AAH

Load data: XXF0H

Address: 555H

Wait TIDA

Return to normal

operation

X can be VIL or VIH, but no other value

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

FIGURE 23: Erase Command Sequence

1270 F22.0

Load data: XXAAH

Address: 555H

Chip-Erase

ommand Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX10H

Address: 555H

Load data: XXAAH

Address: 555H

W ait TSCE

Chip erased

to FFFFH

Load data: XXAAH

Address: 555H

Sector-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX50H

Address: SAX

Load data: XXAAH

Address: 555H

W ait TSE

Sector erased

to FFFFH

Load data: XXAAH

Address: 555H

Block-Erase

Command Sequenc

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX30H

Address: BAX

Load data: XXAAH

Address: 555H

W ait TBE

Block erased

to FFFFH

Note: X can be VIL or VIH, but no other value.

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

PRODUCT ORDERING INFORMATION

Valid combinations for GLS36VF3203

GLS36VF3203-70-4E-B3KE GLS36VF3203-70-4E-EKE

GLS36VF3203-70-4I-B3KE GLS36VF3203-70-4I-EKE

Valid combinations for GLS36VF3204

GLS36VF3204-70-4E-B3KE GLS36VF3204-70-4E-EKE

GLS36VF3204-70-4I-B3KE GLS36VF3204-70-4I-EKE

Note: Valid combinations are those products in mass production or will be in mass production. Consult your Greenliant sales

representative to confirm availability of valid combinations and to determine availability of new combinations.

Environmental Attribute

E1 = non-Pb

Package Modifier

K = 48 balls or leads

Package Type

B3 = TFBGA (6mm x 8mm)

E =TSOP (type 1, die up, 12mm x 20mm)

Temperature Range

E = Extended = -20°C to +85°C

I = Industrial = -40°C to +85°C

Minimum Endurance

4 = 10,000 cycles

Read Access Speed

70 = 70 ns

Bank Split

3 = 8 Mbit + 24 Mbit

4 = 24 Mbit + 8 Mbit

Device Density

320 = 2 Mbit x16 or

4 Mbit x8

Voltage

V = 2.7-3.6V

Product Series

36 = Concurrent SuperFlash

1. Environmental suffix “E” denotes non-Pb solder.

Greenliant non-Pb solder devices are “RoHS Compli-

ant”.

GLS 36 VF 320x - 70 - 4E - B3K E

XX XX XXXX- XXX -XX-XXX X

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

PACKAGING DIAGRAMS

48-BALL THIN-PROFILE, FINE-PITCH BALL GRID ARRAY (TFBGA) 6MM X 8MM

GREENLIANT PACKAGE CODE: B3K

A1 CORNER

H G F E D C B A

A B C D E F G H

BOTTOM VIEWTOP VIEW

SIDE VIEW

SEATING PLANE 0.35 ± 0.05

1.10 ± 0.10

0.12

6.00 ± 0.20

0.45 ± 0.05

(48X)

A1 CORNER

8.00 ± 0.20

0.80

4.00

0.80

5.60

48-tfbga-B3K-6x8-450mic

-4

ote: 1. Complies with JEDEC Publication 95, MO-210, variant 'AB-1', although some dimensions may be more stringent.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.12 mm

4. Ball opening size is 0.38 mm (± 0.05 mm)

1mm

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

48-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 12MM X 20MM

GREENLIANT PACKAGE CODE: EK

1.05

0.95

0.70

0.50

18.50

18.30

20.20

19.80

0.70

0.50

12.20

11.80

0.27

0.17

0.15

0.05

48-tsop-EK-8

ote: 1. Complies with JEDEC publication 95 MO-142 DD dimensions,

although some dimensions may be more stringent.

2. All linear dimensions are in millimeters (max/min).

3. Coplanarity: 0.1 mm

4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.

1.20

max.

1mm

0°-

5°

DETAIL

Pin # 1 Identifier

0.50

BSC

Data Sheet

32 Mbit Concurrent SuperFlash

GLS36VF3203 / GLS36VF3204

TABLE 17: Revision History

Number Description Date

00 •Initial release of data sheet Feb 2005

01 •Updated “Erase-Suspend/Erase-Resume Operations” on page 3

•Updated footnote 5 and added footnote 7 to Table 7 on page 14

•Updated CFI Query Identification in Table 8 on page 15

•Updated Device Geometry Information in Table 10 on page 16

•Updated TES parameter from 20 µs to 10 µs in Table 16 on page 19

•In “Product Ordering Information” on page 32

– Removed all MPNs for packages containing Pb (B3K/EK)

– Removed all commercial temperature MPNs

– Added extended temperature MPNs for all devices

Sep 2005

02 •Removed Industrial Grade reference

•Changed to Data Sheet

•Removed non-Pb reference

•Updated Bank information

•Changes TOE from 30ns to 35ns, Table 15, page 18

May 2006

03 •Re-added Industrial Grade reference Jul 2006

04 •Edited Tby TY/BY# Delay Time in Table 15 on page 19 from 90ns Min to 90ns Max Nov 2009

05 •Transferred from SST to Greenliant May 2010

Greenliant, the Greenliant logo and NANDrive are trademarks of Greenliant Systems, Ltd.

All trademarks and registered trademarks are the property of their respective owners.

These specifications are subject to change without notice.

CSF is a trademark and SuperFlash is a registered trademark of Silicon Storage Technology, Inc., a wholly owned subsidiary of

Microchip Technology Inc.