1C3D10060A Rev. D, 06-2015
C3D10060A
Silicon Carbide Schottky Diode
Z-Rec®
Features
Benets
Applications
Package
Maximum Ratings (T
Symbol Parameter Value Unit Test Conditions Note
V 600 V
V 600 V
V 600 V
30
10
A
T
T
T
46
31 ATP
TP
90
71 AT
T
ATP
TP
Ptot
T
T
TJ
1
Part Number Package Marking
VRRM = 600 V
IF (TC=135˚C)
Qc
2C3D10060A Rev. D, 06-2015
40
50
60
70
80
90
100
Reverse Leakage Current, I
RR (mA)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
= 25
°
C
0
10
20
30
0 100 200 300 400 500 600 700 800 900 1000
Reverse Leakage Current, I
Reverse Voltage, VR(V)
T
J
= -55 °C
T
J
= 25
°
C
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
V = 10 A TJ
= 10 A TJ
R 10
VR = 600 V TJ
VR = 600 V TJ
Q
VR = 10 A
it
TJ
44
40
VRJ
VRJ
VRJ
E 3.6 VR = 400 V
Thermal Characteristics
Symbol Parameter Typ. Unit Note
Rθ 1.1
Typical Performance
10
15
20
25
30
Foward Current, I
F(A)
T
J
= -55 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 175 °C
T
J
= 125 °C
0
5
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Foward Current, I
Foward Voltage, VF(V)
IF (A)
VF (V) VR (V)
IR (mA)
3C3D10060A Rev. D, 06-2015
40
60
80
100
I
F(A)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
20
25 50 75 100 125 150 175
T
C
(°C)
60
80
100
120
140
160
PTOT
(W)
0
20
40
25 50 75 100 125 150 175
T
C
(°C)
Typical Performance
15
20
25
30
35
40
Capacitive Charge, Q
C
(nC)
Conditions:
T
J
= 25 °C
0
5
10
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
200
250
300
350
400
450
500
Capacitance (pF)
Conditions:
TJ= 25 °C
Ftest = 1 MHz
Vtest = 25 mV
0
50
100
150
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D10060A Rev. D, 06-2015
4
5
6
7
8
9
10
Capacitance Stored Energy, E
C
(µ
µ
µ
µJ)
0
1
2
3
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, V
R
(V)
Typical Performance
100
1,000
I
FSM
(A)
T
J
= 25 °C
T
J
= 110 °C
10
10E-6 100E-6 1E-3 10E-3
Time, t
p
(s)
tp (s)
IFSM (A)
VR (V)
EC(mJ)
100E-3
1
Thermal Resistance (oC/W)
0.5
0.3
0.1
0.05
0.02
SinglePulse
1E-3
10E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, t
p
(s)
0.01
Thermal Resistance (˚C/W)
T (Sec)
5C3D10060A Rev. D, 06-2015
POS Inches Millimeters
Min Max Min Max
A .381 .410 9.677 10.414
B .235 .255 5.969 6.477
C .100 .120 2.540 3.048
D .223 .337 5.664 8.560
D1 .457-.490 11.60-12.45 typ
D2 .277-.303 typ 7.04-7.70 typ
D3 .244-.252 typ 6.22-6.4 typ
E .590 .615 14.986 15.621
E1 .302 .326 7.68 8.28
E2 .227 251 5.77 6.37
F .143 .153 3.632 3.886
G 1.105 1.147 28.067 29.134
H .500 .550 12.700 13.970
L .025 .036 .635 .914
M .045 .055 1.143 1.397
N .195 .205 4.953 5.207
P .165 .185 4.191 4.699
Q .048 .054 1.219 1.372
S 3° 6° 3° 6°
T 3° 6° 3° 6°
U 3° 6° 3° 6°
V .094 .110 2.388 2.794
W .014 .025 .356 .635
X 3° 5.5° 3° 5.5°
Y .385 .410 9.779 10.414
z.130 .150 3.302 3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
PIN 1
PIN 2
CASE
Recommended Solder Pad Layout
Part Number Package Marking
Note: Recommended soldering proles can be found in the applications note here:
Package Dimensions
66 C3D10060A Rev. D, 06-2015
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toequipmentusedintheoperationofnuclearfacilities,life-supportmachines,cardiacdebrillatorsorsimilaremergencymedical
equipment,aircraftnavigationorcommunicationorcontrolsystems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
• Schottky diode Spice models: http://response.cree.com/Request_Diode_model
• SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns
RelatedLinks
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
T = VT T
VT = 0.94 + (TJ -3
RT = 0.044 + (TJ -4
