kw, SGS-THOMSON 7 wicroguecrromes VNO5H HIGH SIDE SMART POWER SOLID STATE RELAY TYPE Voss Rpsion) lout Vcc VNO5H 60 Vv 0.1892 12A 36 V a OUTPUT CURRENT (CONTINUOUS): 12A @ Tce=?5C LOGIC LEVEL 5V COMPATIBLE INPUT a a THERMAL SHUT-DOWN a UNDER VOLTAGE SHUT-DOWN a OPEN DRAIN DIAGNOSTIC OUTPUT PENTAWATT PENTAWATT a VERY LOW STAND-BY POWER (vertical) (horizontal) DISSIPATION DESCRIPTION The VNO5H is a monolithic devices mace using PENTAWATI SGS-THOMSON Vertical Intelligent Power (in-line) Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-dewn protects the chip from over temperature and short circuit. ORDER CODES: The input control is 5V logic level compatible. PENTAWATI vertical VNO50H The open drain diagnostic output indicates open PENTAWATT horizontal VNO50H(011Y) circuit (no load) and over temperature status. PENTAWATT in-line VNO50H(012Y) BLOCK DIAGRAM Vee 3 UNDER VOLTAGE ! | CHARGE INPUT | 2 || LOGIC PUMP 5 | OUTPUT OPEN LOAD STATUS) 4 OVER TEMP. 1 $C123380 GROUND July 1998 10VNOSH ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit Vipryoss |Drain-Source Breakdown Voltage 60 Vv lout Output Current (cont.) 12 A IR Reverse Output Current -12 A lin Input Gurrent +10 mA Voc Supply Voltage (continuous) 40 Vv Veco Supply Voltage (pulsed) 60 Vv -Voec Reverse Supply Voltage -4 Vv ISTAT Status Current +10 mA VeEsp Electrostatic Discharge (1.5 k, 100 pF) 2000 Vv Prot Power Dissipation at Te < 25 C 52 W Tj Junction Operating Temperature -40 to 150 C Tsig Storage Temperature -55 to 150 "> ESB Power Mos Avalanche Energy 350 mJ CONNECTION DIAGRAMS OUTPUT STATUS Vee INPUT GROUND PC10000 CURRENT AND VOLTAGE CONVENTIONS Vec output] 5 | GROUND l gut Vour Yo SCO4660 2/10 xVNO5H THERMAL DATA Rinj-case | Thermal Resistance Junction-case Max 2.4 C/W Rihj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (Vcc = 9 to 36 V; -40 < Tj < 125 C unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit Vec Supply Voltage see note 1 5.5 13 36 Vv Ron On State Resistance lour=6 A 0.18 a lour=6 A Tj) = 25C 0.36 Q Is Supply Current Off State Tj) > 25C 50 WA On State 15 mA SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit taton} Turn-on Delay Time Of |lour = 6 A Resistive Load 15 is Output Current Input Rise Time < 0.1 ps Tj = 25C tr Rise Time Of Output lout = 6 A Resistive Load 30 ps Current Input Rise Time < 0.1 ps Tj = 25C tarott Turn-off Delay Time Of |lour = 6 A Resistive Load 20 js Output Current Input Rise Time < 0.1 ps 1) = 25C t Fall Time Of Cutput lout = 6 A Resistive Load 10 ps Current Input Rise Time < 0.1 pws Tj = 25 C (di/dt}on |Turn-on Current Slope |lour=6A 0.5 A/us lout =loy 25< T; <140 C 2 A/us (di/dt)o# |Turn-off Current Slope |lour=6A 2 A/us lour=loy 25 <7) < 140C 4 A/us Veemag |Inductive Load Clamp |lour=6 A L=1 mH -7 -4 -2 Vv Voltage LOGIC INPUT Symbol Parameter Test Conditions Min. | Typ. | Max. Unit VIL Input Low Level 0.8 Vv Voltage Vin Input High Level 2 (*) Vv Voltage Vimnyst) | Input Hysteresis 0.5 v Voltage lin Input Current Vin=5V 50 pA Viet Input Glamp Voltage lin= 10 mA 6 Vv lin =-10 mA -0.7 V ky 3/10VNOSH ELECTRICAL CHARACTERISTICS (Continued) PROTECTION AND DIAGNOSTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit Vstat (*) |Status Voltage Output |Istart = 1.6 mA 0.4 Vv Low Vusp Under Voltage Shut 5.5 Vv Down Vsc_ (*) |Status Clamp Voltage |Istar= 10 mA 6 Vv Istat = -10 mA -0.7 Vv lov Over Current Rioap < 10 mQ 20 A lay Average Current in Rioap < 10 mMQ = =T. = 85C 1.4 A Short Circuit lot Open Load Gurrent 5 180 mA Level Trsp Termal Shut-Down 140 C Temperature TR Reset Temperature 125 C (*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (*) Status determinaion > 100 us atter the switching edge. Note 1: Above Vcc = 36V the output voltage is clamped to 36. Power dissipation increases and the device turns off it junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 C. When the temperature returns to about 125 C the switch is automatically turned on again. To ensur the protection in all Vec conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level Ill of the ISO TR/1 7631. Above Vcc = 36V the output voltage is clamped to 36V. Power dissipation increases and the device tums off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to AGAINST 40 insert a Schottky diode between pin 1 (GND} and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VrF is seen by the device. (Vil, VIH thresholds and Vstat are increased by Vr with respect to power GND). - The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] {see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of ViH, Vit and Vstat takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. xVNO5H TRUTH TABLE INPUT OUTPUT DIAGNOSTIC Normal Operation L L H H H H Open Circuit (No Load) L L H H H L Over-temperature L L H H L L Under-voltage x L H x L H Figure 1: Waveforms INPUT INPUT sus [OO a a en ON NORMAL ON OPEN LOAD SWITCH OFF OPERATION SWITCH OFF | Lf \ fw f/\_ VAL Our OUT INPUT INPUT [.ttwt~CSOSS STATUS ~~ Hf THERMAL STATUS ON ON SHUTDOWN SWITCH OFF UNDER SWITCH OFF VOLTAGE oe 140C lout l our NM \__I LL S15 SC04690 Figure 2: Over Current Test Circuit nom = 100A O ESR<10m 0) sm WOTTE_L_] OIF J ti 1Q0nF Jr Vee OUTPUT <10m0 GND S$C04710 4] 5/10VNOSH Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Vee I g NPUT ee VNXX STATUS 5 GND Schottky W LOAD Diode | SC 04671 POWER GND Figure 4: Typical Application Circuit With Separate Signal Ground CONTROL OUTPUT UNIT GND | toa SCO6051 POWER GND 6/10 kiVNO5H PENTAWATT (VERTICAL) MECHANICAL DATA inch TYP. L lu | L1 = <| / \ i 1 I - of T 7 5 a L2 LS L3 j = ee ls Bia. b S Lh L? zl L6 PO10E 710 4]VNOSH PENTAWATT (HORIZONTAL) MECHANICAL DATA inch TYP. Li PO10F 8/10 xVNO5H PENTAWATT (IN-LINE) MECHANICAL DATA inch TYP 4] 9/10VNOSH Information fturished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of ST Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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