N-Ch P-Ch
VDSS 2 0 V -20V
RDS(on) 0.029Ω 0.058Ω
N-Channel P-Channel
Drain-Source Voltage VDS 20 -20
Gate-Source Voltage VGS ± 12
TA = 25°C 6.6 -5.3
TA = 70°C 5.3 -4.3
Pulsed Drain Current IDM 26 -21
Continuous Source Current (Diode Conduction) IS2.5 -2.5
TA = 25°C 2.0
TA = 70°C 1.3
Single Pulse Avalanche Energy EAS 100 150 mJ
Avalanche Current IAR 4.1 -2.9 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
PRELIMINARY HEXFET® Power MOSFET
PD - 9.1568B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
12/9/97
SO-8
lGeneration V Technology
lUltra Low On-Resistance
lDual N and P Channel MOSFET
lSurface Mount
lFully Avalanche Rated
IRF7317
Description
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient RθJA 62.5 °C/W
Continuous Drain Current
Maximum Power Dissipation
A
ID
PD
V
W
Symbol Maximum Units
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
IRF7317
Surface mounted on FR-4 board, t ≤ 10sec.
Parameter Min. Typ. Max. Units Conditions
N-Ch 20 — — VGS = 0V, ID = 250µA
P-Ch -20 — — VGS = 0V, ID = -250µA
N-Ch — 0.027 — Reference to 25°C, ID = 1mA
P-Ch — 0.031 — Reference to 25°C, ID = -1mA
— 0.0230.029 VGS = 4.5V, ID = 6.0A
— 0.0300.046 VGS = 2.7V, ID = 5.2A
— 0.0490.058 VGS = -4.5V, ID = -2.9A
— 0.0820.098 VGS = -2.7V, ID = -1.5A
N-Ch 0.7 — — VDS = VGS, ID = 250µA
P-Ch -0.7 — — VDS = VGS, ID = -250µA
N-Ch — 20 — VDS = 10V, ID = 6.0A
P-Ch — 5.9 — VDS = -10V, ID = -1.5A
N-Ch — — 1.0 VDS = 16V, VGS = 0V
P-Ch — — -1.0 VDS = -16V, VGS = 0V
N-Ch — — 5.0 VDS = 16V, VGS = 0V, TJ = 55°C
P-Ch — — -25 VDS = -16V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ±12V
N-Ch — 18 27
P-Ch — 19 29
N-Ch — 2.2 3.3
P-Ch — 4.0 6.1
N-Ch — 6.2 9.3
P-Ch — 7.7 12
N-Ch — 8.1 12
P-Ch — 15 22
N-Ch — 17 25
P-Ch — 40 60
N-Ch — 38 57
P-Ch — 42 63
N-Ch — 31 47
P-Ch — 49 73
N-Ch — 900 —
P-Ch — 780 —
N-Ch — 430 — pF
P-Ch — 470 —
N-Ch — 200 —
P-Ch — 240 —
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
N-Channel
ID = 6.0A, VDS = 10V, VGS = 4.5V
P-Channel
ID = -2.9A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10Ω
P-Channel
VDD = -10V, ID = -2.9A, RG = 6.0Ω,
RD = 3.4Ω
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
N-Ch
P-Ch
Parameter Min. Typ. Max. Units Conditions
N-Ch — — 2.5
P-Ch — — -2.5
N-Ch — — 26
P-Ch — — -21
N-Ch — 0.72 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V
P-Ch — -0.78 -1.0 TJ = 25°C, IS = -2.9A, VGS = 0V
N-Ch — 52 77
P-Ch — 47 71
N-Ch — 58 86
P-Ch — 49 73
Source-Drain Ratings and Characteristics
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF =1.7A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -2.9A, di/dt = 100A/µs
N-Channel ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A.
nA
IRF7317
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5 2.0 2.5 3.0
V = 10V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRF7317
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
1.8A
3.3A
4.1A
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
6.0A
0.01
0.02
0.03
0.04
0.05
02468
A
GS
V , G ate-to-S ource V olta
g
e
(
V
)
I = 6.6A
D
0.020
0.024
0.028
0.032
0 102030
A
I , D rain Curren t
(
A
)
D
V = 4.5V
GS
V = 2 .7V
GS
IRF7317
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
0
400
800
1200
1600
1 10 100
C , Capacitance (pF)
DS
V , D rain-to -S ourc e V oltage (V)
A
V = 0 V , f = 1MH z
C = C + C , C SH OR T ED
C = C
C = C + C
GS
iss g s gd d s
rss g d
o s s d s g d
C
iss
C
oss
C
rss
0 5 10 15 20 25 30
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D6.0A V = 10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration
(
sec
)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7317
Fig 14. Typical Transfer Characteristics
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Fig 15. Typical Source-Drain Diode
Forward Voltage
P-Channel
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
IRF7317
Fig 16. Normalized On-Resistance
Vs. Temperature
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 18. Typical On-Resistance Vs. Gate
Voltage
P-Channel
RDS(on) , Drain-to-Source On Resistance ( Ω )
RDS(on) , Drain-to-Source On Resistance ( Ω )
-ID , Drain Current (A)
25 50 75 100 125 150
0
100
200
300
400
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.3A
-2.3A
-2.9A
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , J unc tion Temperature (°C )
R , D ra in- to-So urc e O n R e s is tanc e
DS(on)
(Normalized)
A
I = -2 . 9 A
V = -4 .5V
D
GS
0.0
0.2
0.4
0.6
0.8
048121620
A
-I , Drain Current (A)
D
V = -4.5V
GS
V = -2.7V
GS
0.03
0.04
0.05
0.06
0.07
0.08
0.0 2.0 4.0 6.0 8.0
A
GS
V , Ga t e - to - So u r c e Vo lta
g
e (V)
I = -5.3 A
D
IRF7317
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
P-Channel
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
0
200
400
600
800
1000
1200
1400
1 10 100
C, Capacitance (pF)
A
DS
-V , D rain-to-Source Voltage (V )
V = 0 V , f = 1MH z
C = C + C , C S H OR T E D
C = C
C = C + C
GS
is s gs g d d s
rs s gd
o s s d s g d
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25 30
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -2.9A
V = -16V
D
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration
(
sec
)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7317
Package Outline
SO8 Outline
SO8
Part Marking Information
E X AMPL E : T HIS IS AN IRF 7 1 01
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
W A F ER
LOT CODE
(LAST 4 DIGITS)
XXXX
BOTTOM
PART NUMBER
TOP
INTERNATIONAL
REC T IFIE R
L O GO
F7101
312
K x 45°
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0° 8° 0° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
5
6
A1
e1
IRF7317
SO8
Dimensions are shown in millimeters (inches)
Tape & Reel Information
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CO NTROLLING DIME NSIO N : M ILLIMETER.
2. O U T LINE C ON FOR M S TO E IA-481 & E IA-541.
FEED DIRECTION
TER MINAL NU M BER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. O U TLIN E C ONFO R M S TO E IA-481 & E IA -54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 12/97
