2 1 3 4 2 1 Anti-Parallel APT2x30DQ100J 3 4 2 1 3 4 SO Parallel APT2x31DQ100J 2 T- 27 "UL Recognized" ISOTOP (R) file # E145592 APT2x31DQ100J 1000V 30A APT2x30DQ100J 1000V 30A DUAL DIE ISOTOP(R) PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS * Anti-Parallel Diode * Ultrafast Recovery Times * Low Losses * Soft Recovery Characteristics * Low Noise Switching * Popular SOT-227 Package * Cooler Operation * Low Forward Voltage * Higher Reliability Systems * Uninterruptible Power Supply (UPS) * High Blocking Voltage * Increased System Power * Induction Heating * Low Leakage Current * High Speed Rectifiers * Avalanche Energy Rated -Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters * Snubber Diode MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25C unless otherwise specified. Characteristic / Test Conditions APT2x31_30DQ100J UNIT 1000 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 92C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 39 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 210 Operating and StorageTemperature Range 20 mJ -55 to 175 C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 30A 2.3 2.8 IF = 60A 2.7 IF = 30A, TJ = 125C 1.7 Volts VR = 1000V 100 VR = 1000V, TJ = 125C 500 Microsemi Website - http://www.microsemi.com 26 UNIT A pF 7-2006 VF Characteristic / Test Conditions 053-4216 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT2x31_30DQ100J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A, diF/dt = -200A/s VR = 667V, TC = 125C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 667V, TC = 25C Maximum Reverse Recovery Current trr IRRM IF = 30A, diF/dt = -200A/s IF = 30A, diF/dt = -1000A/s VR = 667V, TC = 125C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 25 - 240 - 355 - 4 - 305 ns - 1575 nC - 9 - 135 ns - 2270 nC - 27 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MAX UNIT 1.1 C/W Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque 10 lb*in 1.1 N*m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.80 0.7 0.60 0.5 0.40 Note: PDM 1.00 0.3 0 10-5 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 0.1 SINGLE PULSE 0.05 10 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -4 7-2006 TJ (C) 053-4216 Rev B t1 t2 0.20 TC (C) 0.291 0.461 0.341 Dissipated Power (Watts) 0.00306 0.0463 0.267 ZEXT Z JC, THERMAL IMPEDANCE (C/W) 1.20 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVES 100 60 TJ = 125C 50 40 30 TJ = 25C 20 TJ = -55C 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 3500 T = 125C J V = 667V R 3000 60A 2500 2000 30A 1500 15A 1000 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change trr 1.0 0.8 T = 125C J V = 667V 60A 350 R 300 30A 250 15A 200 150 100 50 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 30 60A T = 125C J V = 667V R 25 20 30A 15 10 15A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 50 Qrr Duty cycle = 0.5 T = 175C 45 J 40 trr 35 IRRM IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 trr, REVERSE RECOVERY TIME (ns) TJ = 175C 70 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 90 80 APT2x31_30DQ100J 400 0.6 30 25 20 0.4 Qrr 0.2 15 10 5 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 140 120 100 80 7-2006 60 40 20 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4216 Rev B CJ, JUNCTION CAPACITANCE (pF) 160 APT2x31_30DQ100J Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 053-4216 Rev B 7-2006 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2X30DQ100J APT2X31DQ100J Anode 2 Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.